Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS "PN Body-Tied SOI-FET" and Proposal of CMOS without Vsub Bias

PROCEEDINGS of IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S), session 5.06, pp1-3, 2019 Authors:Wataru Yabuki, Jiro Ida, Takayuki Mori, Koichiro Ishibashi and Yasuo Arai