アスバル ジョエル

Joel T. Asubar received his M.S. and Ph.D. degrees from Nagaoka University of Technology, Niigata, Japan, working on semiconductor spintronics. He was a research trainee at Hitachi Central Research Laboratory in Kokubunji, Tokyo working with LD-MOSFETs. In 2010, he joined the Research Center for Integrated Quantum Electronics (RCIQE) of the Hokkaido University as a Post-doctoral fellow. In 2014 he joined University of Fukui, Japan as a Senior Assistant Professor, and was promoted to Associate Professor in 2019. He has been a committee member of IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK) since 2015. His research interests include growth of heterojunctions and device physics of GaN-based transistors. He is a 2016 Japanese Society of Applied Physics Outstanding Paper Awardee (www.jsap.or.jp/english/awards/jsap-outstanding-paper-award/recipients38). He is the Institute of Physics (Applied Physics Express) "Reviewer of the Year" for 2022. Recently, he was also awarded the "Trusted Reviewer Status" by the United Kingdoms's Institute of Physics (IOP). He is currently serving as an Editor of Applied Physics Expresss and Japanese Journal of Applied Physics.