Asubar Joel Tacla

J-GLOBAL         Last updated: Oct 16, 2019 at 12:36
 
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Name
Asubar Joel Tacla
E-mail
joelu-fukui.ac.jp
URL
http://t-profile.ad.u-fukui.ac.jp/profile/ja.8e262b206f2ab4d8520e17560c007669.html
Affiliation
University of Fukui
Section
Graduate School of Engineering
Job title
Associate Professor
Degree
PhD in Information Science and Control Engineering(Nagaoka University of Technology)
ORCID ID
0000-0002-1829-4129

Profile

Joel T. Asubar received his B.S. ECE degree (silver medalist) from Mapua Institute of Technology, and his M.S. and Ph.D. degrees from Nagaoka University of Technology, Niigata, Japan, working on semiconductor spintronics. He was a research trainee at Hitachi Central Research Laboratory in Kokubunji, Tokyo working with LD-MOSFETs. In 2010, he joined the Research Center for Integrated Quantum Electronics (RCIQE) of the Hokkaido University as a Post-doctoral fellow. In 2014 he joined University of Fukui, Japan as a Senior Assistant Professor, and was promoted to Associate Professor in 2019. He has been a committee member of IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK) since 2015. His research interests include growth of heterojunctions and device physics of GaN-based transistors. He is a 2016 Japanese Society of Applied Physics Outstanding Paper Awardee (www.jsap.or.jp/english/awards/jsap-outstanding-paper-award/recipients38).

Research Areas

 
 

Academic & Professional Experience

 
Apr 2019
 - 
Today
Associate Professor, Graduate School of Engineering, University of Fukui
 
Nov 2014
 - 
Mar 2019
Senior Assistant Professor, Tenure-Track Program for Innovative Research, University of Fukui
 
Apr 2010
 - 
Oct 2014
Post-doctoral Fellow, Research Center for Integrated Quantum Electronics, Hokkaido University
 
Nov 2009
 - 
Mar 2010
Post-doctoral Fellow, Department of Electrical Engineering, Nagaoka University of Technology
 

Education

 
Aug 2006
 - 
Sep 2009
PhD in Information Science and Control Engineering, Electrical Engineering, Nagaoka University of Technology
 
Sep 2004
 - 
Aug 2006
Masters in Electrical, Electronics and Information Engineering, Electrical Engineering, Nagaoka University of Technology
 
Nov 1996
 - 
Nov 1998
Masters in Engineering Major in Electronics, EE-ECE-CoE, Mapua Institute of Technology
 
Jun 1991
 - 
Nov 1995
BS in Electronics and Communications Engineering, EE-ECE-CoE, Mapua Institute of Technology
 

Committee Memberships

 
 
 - 
Today
2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019)  Program Committee Member
 
 
 - 
Today
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)  Program Committee Member
 
 
 - 
Today
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)  Program Committee Member
 
 
 - 
Today
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)  Program Committee Member
 
 
 - 
Today
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)  Program Committee Member
 

Awards & Honors

 
Dec 2018
Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2018 https://eds.ieee.org/images/files/Publications/EDL_Editor_Pictures/edlgoldenlist.pdf, IEEE Electron Device Letters Journal
 
Nov 2018
Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs, Threshold voltage hysteresis in GaN-based vertical Trench MOSFETs, International Workshop on Nitride Semiconductors
Winner: Shoichi Murata, Masataka Sasada, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
 
Jun 2018
Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates, Student Paper Award, 2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)
Winner: T. Nishitani, R. Yamaguchi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
Dec 2017
Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2017 http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8103431, IEEE Electronics Device Letters Journal
Winner: Joel T. Asubar
 
Jun 2017
Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure, 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017), 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)
Winner: W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
Jun 2017
Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage, Best Paper Award, The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)
Winner: W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
Sep 2016
Characterization of electronic states at insulator/(Al)GaN interfaces for improved Insulated gate and surface passivation structures of GaN-based transistors, 2016 Japan Society of Applied Physics Outstanding Paper Award, Japan Society of Applied Physics
Winner: Z. Yatabe, Y. Hori, W.-C. Ma, J. T. Asubar, M. Akazawa, T. Sato, and T. Hashizume
 
Jun 2016
Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns, Student Paper Award, 2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)
Winner: T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
Jun 2015
Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure, Student Paper Award, 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)
Winner: A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
 
Dec 2013
Investigation of AlGaN/GaN HEMT Off-state Stress Current Collapse, Incentive Award, Japan Society of Applied Physics Hokkaido Chapter
Winner: K. Nishiguchi. J.T. Asubar, T. Hashizume
 
Aug 2008
Growth and Properties of Mn-doped ZnSnAs2 epitaxial films, Incentive Award, Japan Society of Applied Physics Hokuriku-Shin Etsu Chapter
Winner: Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi
 
Jan 2008
Interpretation of the Temperature Dependence of the Transport Properties of ZnSnAs2 epitaxial films grown by MBE, Excellent Research Award, Institute of Electrical Engineers of Japan(IEEJ) Niigata Chapter
Winner: Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi
 
Jan 2006
Effect of Zn Incorporation on the properties of GaMnAs diluted magnetic semiconductor, Special Award, Institute of Electrical Engineers of Japan(IEEJ) Niigata Chapter
Winner: Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi
 

Published Papers

 
Hirokuni Tokuda, Sayaka Harada, Joel T. Asubar and Masaaki Kuzuhara
Japanese Journal of Applied Physics   58 106503-1-106503-6   Sep 2019   [Refereed]
Mary Clare S. Escaño, Joel T. Asubar, Zenji Yatabe, Melanie Y.David, Mutsunori Uenuma, Hirokuni Tokuda, Yukiharu Uraoka, Masaaki Kuzuhara, and MasahikoTani
Applied Surface Science   481 1120-1126   Jul 2019   [Refereed]
Hiroto Oomae, Miyuki Shinoda, Joel T. Asubar, Kai Sato, Hideyuki Toyota, Norihito Mayama, Bakhshi Mehdiyev, and Naotaka Uchitomi
Journal of Applied Physics   125 073902-1-073902-8   Feb 2019   [Refereed]
Zenji Yatabe, Shinya Inoue, Joel T. Asubar, and Seiya Kasai
Applied Physics Express   11 031201-1-031201-4   Jun 2018   [Refereed]
Hirokuni Tokuda, Kosuke Suzuki, Joel T. Asubar, and Masaaki Kuzuhara
Japanese Journal of Applied Physics   57 071001-1-071001-4   May 2018   [Refereed]
Naotaka Uchitomi, Shiro Hidaka, Shin Saito, Joel T. Asubar, and Hideyuki Toyota
Journal of Applied Physics   123 161566-1-161566-7   Apr 2018   [Refereed]
Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
Applied Physics Express   11 054102-1-054102-5   Apr 2018   [Refereed]
Shintaro Ohi, Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
Applied Physics Express   11 024101-1-024101-14   Jan 2018   [Refereed]
Hirokuni Tokuda, Joel T. Asubar, and Masaaki Kuzuhara
Japanese Journal of Applied Physics   56 104101-1-104101-5   Sep 2017   [Refereed]
J. T. Asubar, H. Tokuda, and M. Kuzuhara
Proceedings of the Samahang Pisika ng Pilipinas 2017      Jul 2017   [Refereed][Invited]
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2017 88-89   Jun 2017   [Refereed]
Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni Tokuda and Masaaki Kuzuhara
IEEE IMFEDK Tech. Digest   2017    Jun 2017   [Refereed]
H. Tokuda, J. T. Asubar, and M. Kuzuhara
Japanese Journal of Applied Physics   55 120305-1-120305-5   Nov 2016   [Refereed]
J. T. Asubar, J. Ng, H. Tokuda, M, Kuzuhara
Compound Semiconductor Magazine      Oct 2016   [Refereed][Invited]
S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar, and T. Hashizume
Applied Physics Letters   109 162104-1-162104-9   Oct 2016   [Refereed]
Z. Yatabe, J. T. Asubar, and T. Hashizume
Journal of Physics D: Applied Physics   49 393001-1-393001-19   Sep 2016   [Refereed][Invited]
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
Proceedings of the Samahang Pisika ng Pilipinas 2016      Aug 2016   [Refereed][Invited]
M. Kuzuhara, J. T. Asubar, H. Tokuda
Japanese Journal of Applied Physics   55 070101-1-070101-12   Jun 2016   [Refereed][Invited]
J. Ng, J. T. Asubar, H. Tokuda, M, Kuzuhara
CS MANTECH, Tech Dig.   2016 215-218   Jun 2016   [Refereed]
T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2016 96-97   Jun 2016   [Refereed]
S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2016 94-95   Jun 2016   [Refereed]
J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
Japanese Journal of Applied Physics   55 04EG07-1-04EG07-5   Mar 2016   [Refereed]
K. Hayashi, N. Uchitomi, K. Yamagami, A. Suzuki, Y. Yoshizawa, J. T. Asubar, N. Happo, S. Hosokawa
Journal of Applied Physics   119 125703-1-125703-9   Mar 2016   [Refereed]
J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara
Applied Physics Express   8 111001-1-111001-4   Oct 2015   [Refereed]
J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
IEEE Transactions on Electron Devices   62 2423-2428   Aug 2015   [Refereed]
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 36-37   Jun 2015   [Refereed]
J. Ng, K. Tone, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 54-55   Jun 2015   [Refereed]
A. Sasakura, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 42-43   Jun 2015   [Refereed]
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 48-49   Jun 2015   [Refereed]
Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 52-53   Jun 2015   [Refereed]
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, and M. Kuzuhara
CS MANTECH, Tech Dig.   2015 185-188   May 2015   [Refereed]
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
CS MANTECH, Tech Dig.   2015 265-268   May 2015   [Refereed]
Zenji Yatabe, Joel T. Asubar, Taketomo Sato and Tamotsu Hashizume
Physica Status Solidi A   212 1075-1080   May 2015   [Refereed]
Zenji Yatabe, Toru Muramatsu, Joel T. Asubar, and Seiya Kasai
Physics Letters A   379(7) 738-742   Mar 2015   [Refereed]
Z. Yatabe, Y. Hori, W.C. Ma, J. T. Asubar, M. Akazawa, T. Sato, and T. Hashizume
Japanese Journal of Applied Physics   53(10) 100213-1-100213-10   Oct 2014   [Refereed]
J.T. Asubar, Z. Yatabe, and T. Hashizume
Applied Physics Letters   105(5) 053510-1-053510-5   Aug 2014   [Refereed]
K. Nishiguchi, J.T. Asubar, and T. Hashizume
Japanese Journal of Applied Physics   53 070301-1-070301-4   Jul 2014   [Refereed]
J.T. Asubar, K. Ohi, K. Nishiguchi, and T. Hashizume
Physica Status Solidi c   11(3-4) 857-861   Apr 2014   [Refereed]
K. Ohi, J.T. Asubar, K. Nishiguchi, and T. Hashizume
IEEE Transactions on Electron Devices   60 2997-3004   Oct 2013   [Refereed][Invited]
H. Oomae, J.T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
Journal of Crystal Growth   338 129-133   Jan 2012   [Refereed]
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, and Y. Jinbo
Japanese Journal of Applied Physics   50(5) 05FB02-1-05FB02-5   May 2011   [Refereed]
J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012031-1-012031-11   Mar 2011   [Refereed]
H. Oomae, J.T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012026-1-012026-5   Mar 2011   [Refereed]
H. Endo, J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012030-1-012030-5   Mar 2011   [Refereed]
K. Oomori, J.T. Asubar, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012024-1-012024-5   Mar 2011   [Refereed]
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, and Y. Jinbo
e-Journal of Surface Science and Nanotechnology   9 95-102   Mar 2011   [Refereed]
H. Oomae, J.T. Asubar, Y. Agatsuma, Y. Jinbo, and N. Uchitomi
Japanese Journal of Applied Physics   50 01BE12-1-01BE12-4   Jan 2011   [Refereed]
Kouichi Hayashi, Naotaka Uchitomi, Joel T. Asubar, Naohisa Happo, Wen Hu, Shinya Hosokawa, and Motohiro Suzuki
Japanese Journal of Applied Physics   50(1) 01BF05-1-01BF05-4   Jan 2011   [Refereed]
J.T. Asubar,Y. Agatsuma, H. Yamaguchi, S. Nakamura, Y. Jinbo, and N. Uchitomi
Physics Procedia   3(2) 1351-1356   Jan 2010   [Refereed]
Y. Agatsuma, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Physics Procedia   3(2) 1341-1344   Jan 2010   [Refereed]
Electrical Properties of ZnSnAs2 Thin Films Grown by MBE
J.T. Asubar, T. Yokoyama, Y. Jinbo, and N. Uchitomi
The Institute of Electronics, Information and Communications Engineers of Japan (IEICE) Technical Report Component Parts and Materials (CPM)   107(325) 103-107   Nov 2009
MBE growth and Low temperature Thermal Annealing of Ferromagnetic Semiconductor (Ga,Mn)As/Zn-doped-GaAsSuperlattice Structures
H. Nakagawa, J.T. Asubar,Y. Jinbo, and N. Uchitomi
The Institute of Electronics, Information and Communications Engineers of Japan (IEICE) Technical Report Component Parts and Materials (CPM)   107(325) 109-113   Nov 2009
J.T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
IEEE Indium Phosphide & Related Materials 2009   255-258   May 2009   [Refereed]
J.T. Asubar, Y. Jinbo, and N. Uchitomi
Phys. Status Solidi (c)   6(5) 1158-1161   May 2009   [Refereed]
Evidence of Impurity Band Conduction in ZnSnAs2 Epitaxial Films
J.T. Asubar, Y. Jinbo, and N. Uchitomi
Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2008 Conference Report   March 2009 121   Mar 2009
MBE Growth and Characterization of Mn-doped ZnSnAs2 Chalcopyrite Thin Films on Si (001) Substrates
Y. Agatsuma, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2008 Conference Report   March 2009 149   Mar 2009
J.T. Asubar, Y. Jinbo, and N. Uchitomi
Journal of Crystal Growth   311(3) 929-932   Jan 2009   [Refereed]
J.T. Asubar, H. Nakagawa, Y. Jinbo, and N. Uchitomi
Japanese Journal of Applied Physics   311(3) 933-936   Jan 2009   [Refereed]
R. Tsuchida, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Journal of Crystal Growth   311(3) 937-940   Jan 2009   [Refereed]
H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Applied Surface Science   254(20) 6648-6652   Aug 2008   [Refereed]
J.T. Asubar, A. Kato, Y. Jinbo, and N. Uchitomi
Japanese Journal of Applied Physics   47(1) 657-660   Jan 2008   [Refereed]
JT Asubar, A Kato, T Kambayashi, S Nakamura, Y Jinbo, N Uchitomi
Journal of Crystal Growth   301 656-661   Apr 2007   [Refereed]
J.T. Asubar, S. Sato, Y. Jinbo, and N. Uchitomi
Phys. Status Solidi (a)   203(11) 2778-2782   Sep 2006   [Refereed]
Structural Investigation of Mn-doped ZnSnAs2 Thin Films Grown by MBE on InP (001) Substrates
J.T. Asubar, A. Kato, S. Nakamura, Y. Jinbo, and N. Uchitomi
Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2006 Conference Report   March 2006 33   Mar 2006
Effect of Low temperature Thermal Annealing on the Properties of Zn-doped Ferromagnetic Semiconductor (Ga,Mn)As
H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
応用物理学会多元系機能材料研究会 平成18年度 成果報告集   March 2006 29   Mar 2006
Zn Incorporation and Its Effect on the Properties of GaMnAs Ferromagnetic Semiconductors Grown by Molecular Beam Epitaxy
J.T. Asubar, S. Sato, Y. Jinbo, and N. Uchitomi
応用物理学会多元系機能材料研究会 平成17年度 成果報告集   Feb 2005 185   Feb 2005

Books etc

 
MBE-grown ZnSnAs2 Epitaxial Films: A Ferromagnetic Semiconductor Host Prospect (invited book chapter), “Chalcopyrite: Chemical Composition, Occurrence and Uses”
J.T. Asubar, H. Oomae, and N. Uchitomi (Part:Contributor)
Nova Science Publishers, Inc., (Hauppauge) New York   Aug 2014   
Electronics Engineering Reviewer For Today’s ECE Licensure Examination
Joel T. Asubar
Padilla Engineering and Review Center Publishing and Tutorial Center   2001   

Conference Activities & Talks

 
Takashi Nishitani, Shunsuke Kamiya, Joel Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
The 80th JSAP Autumn Meeting 2019   18 Sep 2019   
M2)Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
The 80th JSAP Autumn Meeting 2019   18 Sep 2019   
Takashi Ozawa, Joel Asubar, Hirokuni Tokuda, Yohei Yagishita, Yoichi Kawano, Masaaki Kuzuhara
The 8oth JSAP Autumn Meeting 2019   18 Sep 2019   
Joel T. Asubar, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
Recent Topics on GaN Semiconductor Devices   5 Jul 2019   The Japan Society of Vacuum and Surface Science
Impact of regrown AlGaN layer on the properties of Al2O3/AlGaN/GaN metal-insulator-semiconductor structures
Joel T. Asubar, Shinsaku Kawabata, Low Rui Shan, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)   17 Jun 2019   
Shinsaku Kawabata, Joel T. Asubar, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
Compound Semiconductor Week 2019   21 May 2019   
Takashi Ozawa, Joel Tacla Asubar, Hirokuni Tokuda, Yohei Yagishita, Yoichi Kawano, and Masaaki Kuzuhara
Compound Semiconductor Week 2019   21 May 2019   
Takashi Nishitani, Ryota Yamaguchi, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
Compound Semiconductor Week 2019   21 May 2019   
Study of breakdown field in Fe-doped Semi-insulating GaN substrates
A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
International Workshop on Nitride Semiconductors 2018 (IWN 2018)   15 Nov 2018   
Threshold voltage hysteresis in GaN-based vertical Trench MOSFETs
S. Murata, M. Sasada, J. T. Asubar, H. Tokuda, M. Kuzuhara
International Workshop on Nitride Semiconductors 2018 (IWN 2018)   13 Nov 2018   
Impact of air annealing on performance of AlGaN/GaN MIS-HEMTs with recessed gate structures
S. Kawabata, W. Gamachi. J. T. Asubar, H. Tokuda, M. Kuzuhara
International Workshop on Nitride Semiconductors 2018 (IWN 2018)   13 Nov 2018   
Characterization of AlGaN/GaN MOSHEMTs with Gate Field Plate
T. Nishitani, R. Yamaguchi, J. T. Asubar, H. Tokuda
International Workshop on Nitride Semiconductors 2018 (IWN 2018)   12 Nov 2018   
Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
Shoichi Murata, Masataka Sasada, Asubar Joel, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting)   18 Sep 2018   
Characterization of AlGaN/GaN MOS-HEMTs with Gate Field Plate
Takashi Nishitani, Ryota Yamaguchi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting)   18 Sep 2018   
Characterization of Breakdown Field in Fe-doped Semi-insulating GaN Substrates
Atsuki Aoai, Kosuke Suzuki, Joel Asubar, Hirokuni Tokuda, Narihito Okada, Kazuyuki Tadatomo, and Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting)   18 Sep 2018   
Effect of Post-gate Deposition Annealing on the Electrical Characteristics of AlGaN/GaN HEMTs with p-GaN Gate
Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   21 Jun 2018   
Reduced Current Collapse in AlGaN/GaN HEMTs with p-GaN layer at the gate-drain access region
Takashi Ozawa, Asubar Joel Tacla, Hirokuni Tokuda, and Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   21 Jun 2018   
Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
Atsuki Aoai, Kousuke Suzuki, Joel Tacla Asubar, Hirokuni Tokuda, Kohei Nojima, Naoto Ishibashi, Narihito Okada and Kazuyuki Tadatomo, and Masaaki Kuzuhara,
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   21 Jun 2018   
Study on Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
Shoichi Murata, Masataka Sasada, Joel Asubar, Hirokuni Tokuda, Katsunori Ueno, Masaharu Edo, and Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   21 Jun 2018   
Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates
Takashi Nishitani, Ryota Yamaguchi, Taisei Yamazaki, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   21 Jun 2018   
Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
Kosuke Suzuki, Atsuki Aoai, Joel T. Asubar, Hirokuni Tokuda, Kohei Nojima, Naoto Ishibashi, Narihito Okada, Kazuyuku Tadatomo, and Masaaki Kuzuhara
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2018)   14 May 2018   
Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress
Masataka Sasada, Norihumi Takashima, Shoichi Murata, Joel Asubar, Hirokuni Tokuda, Katsunori Ueno, Masaharu Edo, Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   17 Mar 2018   
Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric
Wataru Gamachi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   17 Mar 2018   
Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates
Ryota Yamaguchi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   17 Mar 2018   
Theoretical study on Improved Current Collapse in AlGaN/GaN HEMT with Field Plate Structure
Kazuki Kodama, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   17 Mar 2018   
A method for deriving interface state density from sub-threshold swing in AlGaN/GaN HEMTs
H. Tokuda, J. T. Asubar, and M. Kuzuhara
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2018)   4 Mar 2018   
Contact resistivity of vertical trench GaN-MOSFET with Si-implanted source region
Norifumi Takashima, Masataka Sasada, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2017-nendo Shuuki Dai-78-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 78th Autumn Meeting)   5 Sep 2017   
Reduced Current Collapse in Multi-Fingered AlGaN/GaN MOS-HEMTs with Dual Field Plate
Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni Tokuda and Masaaki Kuzuhara
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)   29 Jun 2017   
Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)   29 Jun 2017   
Investigation of Dynamic On-Resistance of Multi-Mesa-Channel AlGaN/GaN HEMTs
Joel T. Asubar, Hirokuni Tokuda, Tamotsu Hashizume, and Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   18 Jun 2017   
Effect of Substrate Thermal Resistivity on Breakdown Voltage of AlGaN/GaN HEMTs
Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   18 Jun 2017   
Study on High Frequency Loss in Coplanar Waveguides Fabricated on Si Substrate
Kosuke Suzuki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   18 Jun 2017   
Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   18 Jun 2017   
Effective Suppression of Current Collapse in AlGaN/GaN HEMTs (invited)
J. T. Asubar, H. Tokuda, and M. Kuzuhara
35th Samahang Pisika ng Pilipinas Physics Conference (SPP 2017)   7 Jun 2017   
Effect of groove spacing on DC characteristics in3DFP AlGaN/GaN HEMTs
A. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2017-nendo Shunki Dai-64-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 64th Spring Meeting)   14 Mar 2017   
High Breakdown Voltage AlGaN/GaN HEMTs Fabricated on Semiinsulating GaN Substrates
Masaaki Kuzuhara, Joel T. Asubar, and Hirokuni Tokuda
"Workshop on Frontier Photonic and Electronic Materials and Devices"   5 Mar 2017   
Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures
J. T. Asubar, S. Yoshida, H. Tokuda, M. Kuzuhara
2015 International Conference on Solid State Devices and Materials (SSDM 2015)   27 Sep 2016   
Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures
Z. Yatabe, J. T. Asubar, Y. Nakamura, and T. Hashizume
2016 International Conference on Solid State Devices and Materials (SSDM 2016)   26 Sep 2016   
Effect of passivation on breakdown and dynamic on-resistance in AlGaN/GaN HEMTs
Masaaki Kuzuhara, Joel. T. Asubar, and Hirokuni Tokuda
European Material Research Society (E-MRS 2016), Fall Meeting   19 Sep 2016   
Effect of drain electrode shape on breakdown voltage in AlGaN/GaN HEMTs
T. Yamazaki, Y. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   13 Sep 2016   
Effect of groove depth on current collapse in 3DFP AlGaN/GaN HEMTs
A. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   13 Sep 2016   
AlGaN/GaN HEMTs on Free-standing GaN Substrates with Critical Electric Field of 1.2 MV/cm
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   13 Sep 2016   
Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors (invited)
Z. Yatabe, Y. Hori, W.C. Ma, J. T. Asubar, M. Akazawa, T. Sato, and T. Hashizume
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   13 Sep 2016   
Effect of Metal Electrode Process on Breakdown Voltages in AlGaN/GaN HEMTs
S. Makino, S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   13 Sep 2016   
Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs (invited)
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
34th Samahang Pisika ng Pilipinas Physics Conference (SPP 2016)   18 Aug 2016   
High on/off ratio AlGaN/GaN MIS-HEMTs with ALD deposited Al2O3 gate dielectric using ozone as an oxidant
H. Tokuda, J. T. Asubar, M. Kuzuhara
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016)   4 Jul 2016   
Impact of Drain Electrode Shape Irregularities on Breakdown Voltage of AlGaN/GaN HEMTs
S. Ohi, S. Makino, T. Yamazaki, H. Tokuda, J. T. Asubar, and M. Kuzuhara
2016 Compound Semiconductor Week (CSW 2016)   26 Jun 2016   
Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns
T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)   23 Jun 2016   
Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs
S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)   23 Jun 2016   
Effect of Metal Electrode Shape Irregularities on AlGaN/GaN HEMTs Breakdown Voltage Revealed by Electroluminescence
S. Makino, T. Yamazaki, S. Ohi, H. Tokuda, J. T. Asubar, and M. Kuzuhara
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 2016   6 Jun 2016   
AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm
J. H. Ng, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2016 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech 2016)   16 May 2016   
Correlation between Off-Breakdown and EL Emission in AlGaN/GaN HEMTs
S. Yoshida, S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shunki Dai-63-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 63rd Spring Meeting)   19 Mar 2016   
Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
A. Sasakura, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   13 Sep 2015   
High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   13 Sep 2015   
Improved Current Collapse by O2 plasma treatment in AlGaN/GaN HEMTs with GaN cap layer
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   13 Sep 2015   
Structural analysis of MBE-grown ZnSnAs2 thin film by X-ray fluorescence holography
S. Hayashi, K. Hayashi, J. T. Asubar, N. Happo, S. Hosokawa, N. Uchitomi
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   13 Sep 2015   
Comparative Study of oxygen plasma treatment and GaN cap layer effects on the current collapse of AlGaN/GaN HEMTs
J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara
11th Topical Workshop on Heterostructures Microelectronics (TWHM 2015)   23 Aug 2015   
Electrical characterization of stepped AlGaN/GaN heterostructures
S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
39th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015)   7 Jun 2015   
Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   4 Jun 2015   
Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
A. Sasakura, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   4 Jun 2015   
Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   4 Jun 2015   
High Drain Current and Low On-Resistance in AlGaN/GaN HEMTs with Au-Plated Ohmic Electrodes
Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   4 Jun 2015   
Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015)   18 May 2015   
Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita,Y. Uraoka, and M. Kuzuhara
2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015)   18 May 2015   
Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   12 Mar 2015   
Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   11 Mar 2015   
Suppressed Current Collapse in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   11 Mar 2015   
Electrical properties of AlGaN/GaN heterostructures grown on a step-etched substrates
S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   11 Mar 2015   
Status and Prospects for GaN-based Power Transistors (invited)
M. Kuzuhara, J. T. Asubar, and H. Tokuda
1st Lecture meeting of Advanced Power Semiconductor Subcommittee (Senshin pawaa handoutai bunka-kai dai-1 kai in Japanese)   19 Nov 2014   
Applications of Al2O3/InAlN interface formed by 2-step ALD to MOSHEMT
Y. Odanagi, M. Akazawa, J. T. Asubar, Z. Yatabe, T. Hashizume
2014-nendo Shuuki Dai-75-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 75th Autumn Meeting)   17 Sep 2014   
Reduced Thermal Resistance in AlGaN/GaN Multi-Mesa-Channel High Electron Mobility Transistors
J.T. Asubar, K. Nishiguchi and T. Hashizume
International Workshop on Nitride Semiconductors 2014   24 Aug 2014   
Spatial Discrimination of Surface Charging Region in AlGaN/GaN HEMTs Investigated Using Dual-Gate Architecture
K. Nishiguchi, J.T. Asubar and T. Hashizume
International Workshop on Nitride Semiconductors 2014   24 Aug 2014   
Current Collapse Characterization of AlGaN/GaN HEMT using a Dual-gate Structure
K. Nishiguchi, J. T. Asubar, and T. Hashizume
2013-nendo Shuuki Dai-74-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 74th Autumn Meeting)   16 Sep 2013   
Investigation of AlGaN/GaN HEMT Off-state Stress Current Collapse
K. Nishiguchi, J. T. Asubar, and T. Hashizume
Dai-49-kai Ouyou Butsuri Gakkai Hokkaido Shibu (Japan Society of Applied Physics Hokkaido Chapter 49th Meeting),   9 Sep 2013   
Current Stability Characterization of AlGaN/GaN HEMTs Using Dual-Gate Structure
J.T. Asubar, K. Nishiguchi and T. Hashizume
10th Topical Workshop on Heterostructure Microelectronics   2 Sep 2013   
Improved Current Stability in Multi-Mesa-Channel AlGaN/GaN Transistors
J.T. Asubar, K. Ohi, k. Nishiguchi and T. Hashizume
10th International Conference on Nitride Semiconductors   25 Aug 2013   
Current Stability in AlGaN/GaN HEMTs
J.T. Asubar, K. Ohi, and T. Hashizume
40th International Symposium on Compound Semiconductors   19 May 2013   
GaN Transistors for Next-generation Power Conversion System [Invited]
J.T. Asubar and T. Hashizume
1st International Symposium on Technology and Sustainability   26 Jan 2012   
Investigation of the Off-state Bias-induced Current Collapse in AlGaN/GaN HEMTs
J. T. Asubar, M. Tajima, and T. Hashizume
2011-nendo Shuuki Dai-72-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 72th Autumn Meeting)   29 Aug 2011   
Characterization of Off-State-Induced Current Collapse in AlGaN/GaN HEMTs Using Dual-Gate Architecture
J.T. Asubar, Masafumi Tajima, and Tamotsu Hashizume
9th International Conference on Nitride Semiconductor   10 Jul 2011   
The Role of Gate-Source Region on the Off-state bias Induced Current Collapse of AlGaN/GaN HEMTs
J.T. Asubar, Masafumi Tajima, and Tamotsu Hashizume
the 5th Asia-Pacific Workshop on Widegap Semiconductors   22 May 2011   
Direct Evidence of the Gate-Source Significant Role on the Bias-induced Current Collapse in AlGaN/GaN HEMTs
J. T. Asubar, M. Tajima, and T. Hashizume
2011-nendo Shunki Dai-58-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 58th Spring Meeting)   24 Mar 2011   
Room-temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-based Spintronic Devices
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, and Y. Jinbo
the17th International Conference on Ternary and Multinary Compounds   27 Sep 2010   
Growth of Pseudomorphic ZnSnAs2 Thin Films on InP substrates
H. Endo, J. T. Asubar, Y. Agatsuma, T. Ishibashi, S. Nakamura, Y. Jinbo, and N. Uchitomi
2010-nen (Heisei 22-Nen) Shunki Dai-57-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 57th Spring Meeting)   17 Mar 2010   
Mn-doped ZnSnAs2 Thin Films Properties Dependence on Mn content
H. Oomae, J. T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
2010-nen (Heisei 22-Nen) Shunki Dai-57-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 57th Spring Meeting)   17 Mar 2010   
MBE growth, Magnetic Properties and Surface Morphology of MnAs Thin Films on GaAs(111) Substrates
K. Oomori, J.T. Asubar, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   13 Mar 2010   
Evidences of Pseudomorphic Growth of ZnSnAs2 Epitaxial Layers on Nearly Lattice Matched InP substrates
H. Endo, J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   13 Mar 2010   
Magneto-optical Properties of MBE-grown MnAs0.4Sb0.6 Thin Films on GaAs(111) Substrates
T. Ishibashi, K. Oomori, M. Naganuma, S. Katoda, J.T. Asubar, Y. Jinbo, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   13 Mar 2010   
Annealing Effects on the Impurity Band Conduction of ZnSnAs2 Epitaxial Films
J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   13 Mar 2010   
Dependence of MBE-grown ZnSnAs2:Mn epitaxial films properties on Mn-doping level
H. Oomae, J.T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   12 Mar 2010   
Low-temperature Annealing Effect on the Properties of ZnSnAs2 Thin Films grown InP substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, and N. Uchitomi
2009-nen (Heisei 21-Nen) Shuuki Dai-70-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 70th Autumn Meeting)   8 Sep 2009   
14. Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP(001) substrates
Y. Agatsuma, J.T. Asubar, Y. Jinbo, and N. Uchitomi
14th International Conference on Narrow Gap Semiconductors and Systems   13 Jul 2009   
High Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP substrates
J.T. Asubar, Y. Agatsuma, H. Yamaguchi, S. Nakamura, Y. Jinbo, and N. Uchitomi
14th International Conference on Narrow Gap Semiconductors and Systems   13 Jul 2009   
Growth and Properties of MnAs Thin films on SiO2
K. Oomori, J. T. Asubar, Y. Jinbo, and N. Uchitomi
28th Electronics Materials Symposium (EMS-28)   8 Jul 2009   
Fabrication and Structural Characterization of Nearly Lattice-matched p-ZnSnAs2/n-InP Heterojunctions
J.T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
IEEE Photonics Society, Indium Phosphide and Related Materials 2009 (IPRM2009)   10 May 2009   
Growth and Annealing Effects of GeMn Thin Films on GaAs Substrates
R. Tsuchida, J. T. Asubar, N. Uchitomi, and Y. Jinbo
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-13)   27 Jan 2009   
Ferromagnetic Mn-doped ZnSnAs2 Thin Films Lattice-matched with InP
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-13)   27 Jan 2009   
High-Resolution X-ray Diffraction Studies of Molecular Beam Epitaxy-Grown ZnSnAs2 Epitaxial Films on InP(001) Substrates
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Heisei 20- Nendo Dai-37-kai Nihon Butsuri Gakkai Niigata Shibu (37th meeting of the Physical Society of Japan-Niigata Chapter 2008)   21 Dec 2008   
MBE Growth and Characterization of Mn-doped Chalcopyrite ZnSnAs2 Thin Films on Si Substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, and N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2008 (Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2008)   14 Nov 2008   
Evidence of Impurity Band Conduction In ZnSnAs2 Epitaxial Films
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2008 (Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2008)   14 Nov 2008