アスバル ジョエル

J-GLOBALへ         更新日: 18/10/16 22:57
 
アバター
研究者氏名
アスバル ジョエル
 
アスバル ジョエル
eメール
joelu-fukui.ac.jp
URL
http://t-profile.ad.u-fukui.ac.jp/profile/ja.8e262b206f2ab4d8520e17560c007669.html
所属
福井大学
部署
テニュアトラック推進本部
職名
博士研究員
学位
博士(工学)(長岡技術科学大学)
ORCID ID
0000-0002-1829-4129

プロフィール

Joel T. Asubar received his B.S. ECE degree (silver medalist) from Mapua Institute of Technology, and his M.S. and Ph.D. degrees from Nagaoka University of Technology, Niigata, Japan, working on semiconductor spintronics. In 2010, he joined the Research Center for Integrated Quantum Electronics (RCIQE) of the Hokkaido University as a Post-doctoral fellow. Since 2014, he has been a Senior Assistant Professor with the University of Fukui, Fukui, Japan. His research interests include growth of heterojunctions and device physics of GaN-based transistors. He is a 2016 Japanese Society of Applied Physics Outstanding Paper Awardee.

研究分野

 
 

経歴

 
2014年11月
 - 
現在
福井大学 テニュアトラック推進本部 教師
 
2010年4月
 - 
2014年10月
北海道大学 量子集積エレクトロニクス研究センター 博士研究員
 
2009年11月
 - 
2010年3月
長岡技術科学大学 電気系 博士研究員
 

学歴

 
2006年8月
 - 
2009年9月
長岡技術科学大学大学院 工学研究科 情報・制御工学専攻
 
2004年9月
 - 
2006年8月
長岡技術科学大学大学院 工学研究科 電気電子情報工学専攻
 
1996年11月
 - 
1998年11月
Mapua Institute of Technology EE-ECE-CoE Masters in Engineering Major in Electronics
 
1991年6月
 - 
1995年11月
Mapua Institute of Technology EE-ECE-CoE BS in Electronics and Communications Engineering
 

委員歴

 
 
 - 
現在
Japanese Society of Applied Physics  Member
 
 
 - 
現在
Institute of Electrical and Electronics Engineer  Member
 
 
 - 
現在
2018 International Meeting for Future of Electron Devices Kansai  Program Committee Member
 
 
 - 
現在
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)  Program Committee Member
 
 
 - 
現在
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)  Program Committee Member
 

受賞

 
2018年6月
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Student Paper Award Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates
受賞者: T. Nishitani, R. Yamaguchi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
2018年
IEEE Electronics Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2017 http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8103431
 
2017年6月
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
受賞者: W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
2017年6月
The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Best Paper Award Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage
受賞者: W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
2016年9月
Japan Society of Applied Physics 2016 Japan Society of Applied Physics Outstanding Paper Award Characterization of electronic states at insulator/(Al)GaN interfaces for improved Insulated gate and surface passivation structures of GaN-based transistors
受賞者: Z. Yatabe, Y. Hori, W.-C. Ma, J. T. Asubar, M. Akazawa, T. Sato, and T. Hashizume
 
2016年6月
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Student Paper Award Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns
受賞者: T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
 
2015年6月
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Student Paper Award Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
受賞者: A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
 
2013年12月
応用物理学会北海道支部 発表奨励賞 AlGaN/GaN HEMT のオフ状態ストレスによる電流変動評価
受賞者: 西口 賢弥, アスバル ジョエル, 橋詰 保
 
2008年8月
応用物理学会北陸信越支部 発表奨励賞 Growth and Properties of Mn-doped ZnSnAs2 epitaxial films
受賞者: アスバル ジョエル, 神保良夫、内富直隆
 
2008年1月
社団法人電気学会東京支部新潟支所 優秀論文発表賞 Interpretation of the Temperature Dependence of the Transport Properties of ZnSnAs2 epitaxial films grown by MBE
受賞者: アスバル ジョエル、神保良夫、内富直隆
 
2006年1月
社団法人電気学会東京支部新潟支所 特別賞 Effect of Zn Incorporation on the properties of GaMnAs diluted magnetic semiconductor
受賞者: アスバル ジョエル, 神保良夫、内富直隆
 

論文

 
Zenji Yatabe, Shinya Inoue, Joel T. Asubar, and Seiya Kasai
Applied Physics Express   11 031201-1-031201-4   2018年6月   [査読有り]
Hirokuni Tokuda, Kosuke Suzuki, Joel T. Asubar, and Masaaki Kuzuhara
Japanese Journal of Applied Physics   57 071001-1-071001-4   2018年5月   [査読有り]
Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
Applied Physics Express   11 054102-1-054102-5   2018年4月   [査読有り]
Naotaka Uchitomi, Shiro Hidaka, Shin Saito, Joel T. Asubar, and Hideyuki Toyota
Journal of Applied Physics   123 161566-1-161566-7   2018年4月   [査読有り]
Shintaro Ohi, Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
Applied Physics Express   11 024101-1-024101-14   2018年1月   [査読有り]
Hirokuni Tokuda, Joel T. Asubar, and Masaaki Kuzuhara
Japanese Journal of Applied Physics   56 104101-1-104101-5   2017年9月   [査読有り]
J. T. Asubar, H. Tokuda, and M. Kuzuhara
Proceedings of the Samahang Pisika ng Pilipinas 2017      2017年7月   [査読有り][招待有り]
Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni Tokuda and Masaaki Kuzuhara
IEEE IMFEDK Tech. Digest   2017    2017年6月   [査読有り]
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2017 88-89   2017年6月   [査読有り]
H. Tokuda, J. T. Asubar, and M. Kuzuhara
Japanese Journal of Applied Physics   55 120305-1-120305-5   2016年11月   [査読有り]
アスバル ジョエルS. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar, and T. Hashizume
Applied Physics Letters   109 162104-1-162104-9   2016年10月   [査読有り]
J. T. Asubar, J. Ng, H. Tokuda, M, Kuzuhara
Compound Semiconductor Magazine      2016年10月   [査読有り][招待有り]
Z. Yatabe, J. T. Asubar, and T. Hashizume
Journal of Physics D: Applied Physics   49 393001-1-393001-19   2016年9月   [査読有り][招待有り]
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
Proceedings of the Samahang Pisika ng Pilipinas 2016      2016年8月   [査読有り][招待有り]
S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2016 94-95   2016年6月   [査読有り]
T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2016 96-97   2016年6月   [査読有り]
J. Ng, J. T. Asubar, H. Tokuda, M, Kuzuhara
CS MANTECH, Tech Dig.   2016 215-218   2016年6月   [査読有り]
M. Kuzuhara, J. T. Asubar, H. Tokuda
Japanese Journal of Applied Physics   55 070101-1-070101-12   2016年6月   [査読有り][招待有り]
K. Hayashi, N. Uchitomi, K. Yamagami, A. Suzuki, Y. Yoshizawa, J. T. Asubar, N. Happo, S. Hosokawa
Journal of Applied Physics   119 125703-1-125703-9   2016年3月   [査読有り]
J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
Japanese Journal of Applied Physics   55 04EG07-1-04EG07-5   2016年3月   [査読有り]
J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara
Applied Physics Express   8 111001-1-111001-4   2015年10月   [査読有り]
J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
IEEE Transactions on Electron Devices   62 2423-2428   2015年8月   [査読有り]
Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 52-53   2015年6月   [査読有り]
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 48-49   2015年6月   [査読有り]
A. Sasakura, J. T. Asubar, H. Tokuda, and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 42-43   2015年6月   [査読有り]
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
IEEE IMFEDK Tech. Digest   2015 36-37   2015年6月   [査読有り]
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
CS MANTECH, Tech Dig.   2015 265-268   2015年5月   [査読有り]
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, and M. Kuzuhara
CS MANTECH, Tech Dig.   2015 185-188   2015年5月   [査読有り]
Zenji Yatabe, Toru Muramatsu, Joel T. Asubar, and Seiya Kasai
Physics Letters A   379(7) 738-742   2015年3月   [査読有り]
Zenji Yatabe, Joel T. Asubar, Taketomo Sato and Tamotsu Hashizume
Physica Status Solidi A   doi: 10.1002/pssa.201431652    2014年11月   [査読有り]
Z. Yatabe, Y. Hori, W.C. Ma, J. T. Asubar, M. Akazawa, T. Sato, and T. Hashizume
Japanese Journal of Applied Physics   53(10) 100213-1-100213-10   2014年10月   [査読有り]
J.T. Asubar, Z. Yatabe, and T. Hashizume
Applied Physics Letters   105(5) 053510-1-053510-5   2014年8月   [査読有り]
K. Nishiguchi, J.T. Asubar, and T. Hashizume
Japanese Journal of Applied Physics   53 070301-1-070301-4   2014年7月   [査読有り]
K. Ohi, J.T. Asubar, K. Nishiguchi, and T. Hashizume
IEEE Transactions on Electron Devices   60 2997-3004   2013年10月   [査読有り][招待有り]
H. Oomae, J.T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
Journal of Crystal Growth   338 129-133   2012年1月   [査読有り]
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, and Y. Jinbo
Japanese Journal of Applied Physics   50(5) 05FB02-1-05FB02-5   2011年5月   [査読有り]
J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012031-1-012031-11   2011年3月   [査読有り]
H. Oomae, J.T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012026-1-012026-5   2011年3月   [査読有り]
H. Endo, J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012030-1-012030-5   2011年3月   [査読有り]
K. Oomori, J.T. Asubar, Y. Jinbo, T. Ishibashi, and N. Uchitomi
IOP Conference Series Materials Science and Engineering   21 012024-1-012024-5   2011年3月   [査読有り]
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, and Y. Jinbo
e-Journal of Surface Science and Nanotechnology   9 95-102   2011年3月   [査読有り]
Kouichi Hayashi, Naotaka Uchitomi, Joel T. Asubar, Naohisa Happo, Wen Hu, Shinya Hosokawa, and Motohiro Suzuki
Japanese Journal of Applied Physics   50(1) 01BF05-1-01BF05-4   2011年1月   [査読有り]
Y. Agatsuma, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Physics Procedia   3(2) 1341-1344   2010年1月   [査読有り]
J.T. Asubar,Y. Agatsuma, H. Yamaguchi, S. Nakamura, Y. Jinbo, and N. Uchitomi
Physics Procedia   3(2) 1351-1356   2010年1月   [査読有り]
MBE growth and Low temperature Thermal Annealing of Ferromagnetic Semiconductor (Ga,Mn)As/Zn-doped-GaAsSuperlattice Structures
H. Nakagawa, J.T. Asubar,Y. Jinbo, and N. Uchitomi
The Institute of Electronics, Information and Communications Engineers of Japan (IEICE) Technical Report Component Parts and Materials (CPM)   107(325) 109-113   2009年11月
Electrical Properties of ZnSnAs2 Thin Films Grown by MBE
J.T. Asubar, T. Yokoyama, Y. Jinbo, and N. Uchitomi
電気情報通信学会技術研究報告 〔電子部品•材料〕   107(325) 103-107   2009年11月
J.T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
IEEE Indium Phosphide & Related Materials 2009   255-258   2009年5月   [査読有り]
J.T. Asubar, Y. Jinbo, and N. Uchitomi
Phys. Status Solidi (c)   6(5) 1158-1161   2009年5月   [査読有り]
MBE Growth and Characterization of Mn-doped ZnSnAs2 Chalcopyrite Thin Films on Si (001) Substrates
Y. Agatsuma, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2008 Conference Report   March 2009 149   2009年3月
Evidence of Impurity Band Conduction in ZnSnAs2 Epitaxial Films
J.T. Asubar, Y. Jinbo, and N. Uchitomi
応用物理学会多元系機能材料研究会 平成20年度 成果報告集   March 2009 121   2009年3月
J.T. Asubar, Y. Jinbo, and N. Uchitomi
Journal of Crystal Growth   311(3) 929-932   2009年1月   [査読有り]
J.T. Asubar, H. Nakagawa, Y. Jinbo, and N. Uchitomi
Japanese Journal of Applied Physics   311(3) 933-936   2009年1月   [査読有り]
R. Tsuchida, J.T. Asubar, Y. Jinbo, and N. Uchitomi J. Cryst. Growth 311, (2009), 937
Journal of Crystal Growth   311(3) 937-940   2009年1月   [査読有り]
H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
Applied Surface Science   254(20) 6648-6652   2008年8月   [査読有り]
J.T. Asubar, A. Kato, Y. Jinbo, and N. Uchitomi
Japanese Journal of Applied Physics   47(1) 657-660   2008年1月   [査読有り]
JT Asubar, A Kato, T Kambayashi, S Nakamura, Y Jinbo, N Uchitomi
Journal of Crystal Growth   301 656-661   2007年4月   [査読有り]
J.T. Asubar, S. Sato, Y. Jinbo, and N. Uchitomi
Phys. Status Solidi (a)   203(11) 2778-2782   2006年9月   [査読有り]
Effect of Low temperature Thermal Annealing on the Properties of Zn-doped Ferromagnetic Semiconductor (Ga,Mn)As
H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
応用物理学会多元系機能材料研究会 平成18年度 成果報告集   March 2006 29   2006年3月
Structural Investigation of Mn-doped ZnSnAs2 Thin Films Grown by MBE on InP (001) Substrates
J.T. Asubar, A. Kato, S. Nakamura, Y. Jinbo, and N. Uchitomi
応用物理学会多元系機能材料研究会 平成18年度 成果報告集   March 2006 33   2006年3月
Zn Incorporation and Its Effect on the Properties of GaMnAs Ferromagnetic Semiconductors Grown by Molecular Beam Epitaxy
J.T. Asubar, S. Sato, Y. Jinbo, and N. Uchitomi
応用物理学会多元系機能材料研究会 平成17年度 成果報告集   Feb 2005 185   2005年2月

書籍等出版物

 
MBE-grown ZnSnAs2 Epitaxial Films: A Ferromagnetic Semiconductor Host Prospect (invited book chapter), “Chalcopyrite: Chemical Composition, Occurrence and Uses”
J.T. Asubar, H. Oomae, and N. Uchitomi (担当:分担執筆)
Nova Science Publishers, Inc., (Hauppauge) New York   2014年8月   

講演・口頭発表等

 
Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
Shoichi Murata, Masataka Sasada, Asubar Joel, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting)   2018年9月18日   
Characterization of AlGaN/GaN MOS-HEMTs with Gate Field Plate
Takashi Nishitani, Ryota Yamaguchi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting)   2018年9月18日   
Characterization of Breakdown Field in Fe-doped Semi-insulating GaN Substrates
Atsuki Aoai, Kosuke Suzuki, Joel Asubar, Hirokuni Tokuda, Narihito Okada, Kazuyuki Tadatomo, and Masaaki Kuzuhara
2018-nendo Shuuki Dai-79-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 79th Autumn Meeting)   2018年9月18日   
Effect of Post-gate Deposition Annealing on the Electrical Characteristics of AlGaN/GaN HEMTs with p-GaN Gate
Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   2018年6月21日   
Reduced Current Collapse in AlGaN/GaN HEMTs with p-GaN layer at the gate-drain access region
Takashi Ozawa, Asubar Joel Tacla, Hirokuni Tokuda, and Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   2018年6月21日   
Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
Atsuki Aoai, Kousuke Suzuki, Joel Tacla Asubar, Hirokuni Tokuda, Kohei Nojima, Naoto Ishibashi, Narihito Okada and Kazuyuki Tadatomo, and Masaaki Kuzuhara,
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   2018年6月21日   
Study on Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs
Shoichi Murata, Masataka Sasada, Joel Asubar, Hirokuni Tokuda, Katsunori Ueno, Masaharu Edo, and Masaaki Kuzuhara
2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   2018年6月21日   
Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates
Takashi Nishitani, Ryota Yamaguchi, Taisei Yamazaki, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018)   2018年6月21日   
Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
Kosuke Suzuki, Atsuki Aoai, Joel T. Asubar, Hirokuni Tokuda, Kohei Nojima, Naoto Ishibashi, Narihito Okada, Kazuyuku Tadatomo, and Masaaki Kuzuhara
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2018)   2018年5月14日   
Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress
Masataka Sasada, Norihumi Takashima, Shoichi Murata, Joel Asubar, Hirokuni Tokuda, Katsunori Ueno, Masaharu Edo, Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   2018年3月17日   
Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric
Wataru Gamachi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   2018年3月17日   
Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates
Ryota Yamaguchi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   2018年3月17日   
Theoretical study on Improved Current Collapse in AlGaN/GaN HEMT with Field Plate Structure
Kazuki Kodama, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)   2018年3月17日   
A method for deriving interface state density from sub-threshold swing in AlGaN/GaN HEMTs
H. Tokuda, J. T. Asubar, and M. Kuzuhara
International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2018)   2018年3月4日   
Contact resistivity of vertical trench GaN-MOSFET with Si-implanted source region
Norifumi Takashima, Masataka Sasada, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
2017-nendo Shuuki Dai-78-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 78th Autumn Meeting)   2017年9月5日   
Reduced Current Collapse in Multi-Fingered AlGaN/GaN MOS-HEMTs with Dual Field Plate
Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni Tokuda and Masaaki Kuzuhara
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)   2017年6月29日   
Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)   2017年6月29日   
Investigation of Dynamic On-Resistance of Multi-Mesa-Channel AlGaN/GaN HEMTs
Joel T. Asubar, Hirokuni Tokuda, Tamotsu Hashizume, and Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   2017年6月18日   
Effect of Substrate Thermal Resistivity on Breakdown Voltage of AlGaN/GaN HEMTs
Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   2017年6月18日   
Study on High Frequency Loss in Coplanar Waveguides Fabricated on Si Substrate
Kosuke Suzuki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   2017年6月18日   
Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage
W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)   2017年6月18日   
Effective Suppression of Current Collapse in AlGaN/GaN HEMTs (invited)
J. T. Asubar, H. Tokuda, and M. Kuzuhara
35th Samahang Pisika ng Pilipinas Physics Conference (SPP 2017)   2017年6月7日   
Effect of groove spacing on DC characteristics in3DFP AlGaN/GaN HEMTs
A. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2017-nendo Shunki Dai-64-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 64th Spring Meeting)   2017年3月14日   
High Breakdown Voltage AlGaN/GaN HEMTs Fabricated on Semiinsulating GaN Substrates
Masaaki Kuzuhara, Joel T. Asubar, and Hirokuni Tokuda
"Workshop on Frontier Photonic and Electronic Materials and Devices"   2017年3月5日   
Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures
J. T. Asubar, S. Yoshida, H. Tokuda, M. Kuzuhara
2015 International Conference on Solid State Devices and Materials (SSDM 2015)   2016年9月27日   
Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures
Z. Yatabe, J. T. Asubar, Y. Nakamura, and T. Hashizume
2016 International Conference on Solid State Devices and Materials (SSDM 2016)   2016年9月26日   
Effect of passivation on breakdown and dynamic on-resistance in AlGaN/GaN HEMTs
Masaaki Kuzuhara, Joel. T. Asubar, and Hirokuni Tokuda
European Material Research Society (E-MRS 2016), Fall Meeting   2016年9月19日   
Effect of drain electrode shape on breakdown voltage in AlGaN/GaN HEMTs
T. Yamazaki, Y. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   2016年9月13日   
Effect of groove depth on current collapse in 3DFP AlGaN/GaN HEMTs
A. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   2016年9月13日   
AlGaN/GaN HEMTs on Free-standing GaN Substrates with Critical Electric Field of 1.2 MV/cm
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   2016年9月13日   
Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors (invited)
Z. Yatabe, Y. Hori, W.C. Ma, J. T. Asubar, M. Akazawa, T. Sato, and T. Hashizume
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   2016年9月13日   
Effect of Metal Electrode Process on Breakdown Voltages in AlGaN/GaN HEMTs
S. Makino, S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shuuki Dai-77-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 77th Autumn Meeting)   2016年9月13日   
Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs (invited)
J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
34th Samahang Pisika ng Pilipinas Physics Conference (SPP 2016)   2016年8月18日   
High on/off ratio AlGaN/GaN MIS-HEMTs with ALD deposited Al2O3 gate dielectric using ozone as an oxidant
H. Tokuda, J. T. Asubar, M. Kuzuhara
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016)   2016年7月4日   
Impact of Drain Electrode Shape Irregularities on Breakdown Voltage of AlGaN/GaN HEMTs
S. Ohi, S. Makino, T. Yamazaki, H. Tokuda, J. T. Asubar, and M. Kuzuhara
2016 Compound Semiconductor Week (CSW 2016)   2016年6月26日   
Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns
T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)   2016年6月23日   
Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs
S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)   2016年6月23日   
Effect of Metal Electrode Shape Irregularities on AlGaN/GaN HEMTs Breakdown Voltage Revealed by Electroluminescence
S. Makino, T. Yamazaki, S. Ohi, H. Tokuda, J. T. Asubar, and M. Kuzuhara
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 2016   2016年6月6日   
Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015)   2016年5月18日   
AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm
J. H. Ng, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2016 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech 2016)   2016年5月16日   
Correlation between Off-Breakdown and EL Emission in AlGaN/GaN HEMTs
S. Yoshida, S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, M. Kuzuhara
2016-nendo Shunki Dai-63-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 63rd Spring Meeting)   2016年3月19日   
Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
A. Sasakura, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   2015年9月13日   
High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate
J. H. Ng, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   2015年9月13日   
Improved Current Collapse by O2 plasma treatment in AlGaN/GaN HEMTs with GaN cap layer
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   2015年9月13日   
Structural analysis of MBE-grown ZnSnAs2 thin film by X-ray fluorescence holography
S. Hayashi, K. Hayashi, J. T. Asubar, N. Happo, S. Hosokawa, N. Uchitomi
2015-nendo Shuuki Dai-76-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 76th Autumn Meeting)   2015年9月13日   
Comparative Study of oxygen plasma treatment and GaN cap layer effects on the current collapse of AlGaN/GaN HEMTs
J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara
11th Topical Workshop on Heterostructures Microelectronics (TWHM 2015)   2015年8月23日   
Electrical characterization of stepped AlGaN/GaN heterostructures
S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
39th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015)   2015年6月7日   
Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   2015年6月4日   
Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
A. Sasakura, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   2015年6月4日   
Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   2015年6月4日   
High Drain Current and Low On-Resistance in AlGaN/GaN HEMTs with Au-Plated Ohmic Electrodes
Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015)   2015年6月4日   
Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita,Y. Uraoka, and M. Kuzuhara
2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015)   2015年5月18日   
Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   2015年3月12日   
Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda, M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   2015年3月11日   
Suppressed Current Collapse in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing
Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   2015年3月11日   
Electrical properties of AlGaN/GaN heterostructures grown on a step-etched substrates
S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
2015-nendo Shunki Dai-62-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 62nd Spring Meeting)   2015年3月11日   
Status and Prospects for GaN-based Power Transistors (invited)
M. Kuzuhara, J. T. Asubar, and H. Tokuda
1st Lecture meeting of Advanced Power Semiconductor Subcommittee (Senshin pawaa handoutai bunka-kai dai-1 kai in Japanese)   2014年11月19日   
Applications of Al2O3/InAlN interface formed by 2-step ALD to MOSHEMT
Y. Odanagi, M. Akazawa, J. T. Asubar, Z. Yatabe, T. Hashizume
2014-nendo Shuuki Dai-75-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 75th Autumn Meeting)   2014年9月17日   
Reduced Thermal Resistance in AlGaN/GaN Multi-Mesa-Channel High Electron Mobility Transistors
J.T. Asubar, K. Nishiguchi and T. Hashizume
International Workshop on Nitride Semiconductors 2014   2014年8月24日   
Spatial Discrimination of Surface Charging Region in AlGaN/GaN HEMTs Investigated Using Dual-Gate Architecture
K. Nishiguchi, J.T. Asubar and T. Hashizume
International Workshop on Nitride Semiconductors 2014   2014年8月24日   
Current Collapse Characterization of AlGaN/GaN HEMT using a Dual-gate Structure
K. Nishiguchi, J. T. Asubar, and T. Hashizume
2013-nendo Shuuki Dai-74-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 74th Autumn Meeting)   2013年9月16日   
Investigation of AlGaN/GaN HEMT Off-state Stress Current Collapse
K. Nishiguchi, J. T. Asubar, and T. Hashizume
Dai-49-kai Ouyou Butsuri Gakkai Hokkaido Shibu (Japan Society of Applied Physics Hokkaido Chapter 49th Meeting),   2013年9月9日   
Current Stability Characterization of AlGaN/GaN HEMTs Using Dual-Gate Structure
J.T. Asubar, K. Nishiguchi and T. Hashizume
10th Topical Workshop on Heterostructure Microelectronics   2013年9月2日   
Improved Current Stability in Multi-Mesa-Channel AlGaN/GaN Transistors
J.T. Asubar, K. Ohi, k. Nishiguchi and T. Hashizume
10th International Conference on Nitride Semiconductors   2013年8月25日   
Current Stability in AlGaN/GaN HEMTs
J.T. Asubar, K. Ohi, and T. Hashizume
40th International Symposium on Compound Semiconductors   2013年5月19日   
GaN Transistors for Next-generation Power Conversion System [招待有り]
J.T. Asubar and T. Hashizume
1st International Symposium on Technology and Sustainability   2012年1月26日   
Investigation of the Off-state Bias-induced Current Collapse in AlGaN/GaN HEMTs
J. T. Asubar, M. Tajima, and T. Hashizume
2011-nendo Shuuki Dai-72-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 72th Autumn Meeting)   2011年8月29日   
Characterization of Off-State-Induced Current Collapse in AlGaN/GaN HEMTs Using Dual-Gate Architecture
J.T. Asubar, Masafumi Tajima, and Tamotsu Hashizume
9th International Conference on Nitride Semiconductor   2011年7月10日   
The Role of Gate-Source Region on the Off-state bias Induced Current Collapse of AlGaN/GaN HEMTs
J.T. Asubar, Masafumi Tajima, and Tamotsu Hashizume
the 5th Asia-Pacific Workshop on Widegap Semiconductors   2011年5月22日   
Direct Evidence of the Gate-Source Significant Role on the Bias-induced Current Collapse in AlGaN/GaN HEMTs
J. T. Asubar, M. Tajima, and T. Hashizume
2011-nendo Shunki Dai-58-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 58th Spring Meeting)   2011年3月24日   
Room-temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-based Spintronic Devices
N. Uchitomi, J.T. Asubar, H. Oomae, H. Endo, and Y. Jinbo
the17th International Conference on Ternary and Multinary Compounds   2010年9月27日   
Growth of Pseudomorphic ZnSnAs2 Thin Films on InP substrates
H. Endo, J. T. Asubar, Y. Agatsuma, T. Ishibashi, S. Nakamura, Y. Jinbo, and N. Uchitomi
2010-nen (Heisei 22-Nen) Shunki Dai-57-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 57th Spring Meeting)   2010年3月17日   
Mn-doped ZnSnAs2 Thin Films Properties Dependence on Mn content
H. Oomae, J. T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
2010-nen (Heisei 22-Nen) Shunki Dai-57-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 57th Spring Meeting)   2010年3月17日   
MBE growth, Magnetic Properties and Surface Morphology of MnAs Thin Films on GaAs(111) Substrates
K. Oomori, J.T. Asubar, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   2010年3月13日   
Evidences of Pseudomorphic Growth of ZnSnAs2 Epitaxial Layers on Nearly Lattice Matched InP substrates
H. Endo, J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   2010年3月13日   
Magneto-optical Properties of MBE-grown MnAs0.4Sb0.6 Thin Films on GaAs(111) Substrates
T. Ishibashi, K. Oomori, M. Naganuma, S. Katoda, J.T. Asubar, Y. Jinbo, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   2010年3月13日   
Annealing Effects on the Impurity Band Conduction of ZnSnAs2 Epitaxial Films
J.T. Asubar, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   2010年3月13日   
Dependence of MBE-grown ZnSnAs2:Mn epitaxial films properties on Mn-doping level
H. Oomae, J.T. Asubar, M. Haneta, Y. Agatsuma, Y. Jinbo, T. Ishibashi, and N. Uchitomi
1st International Symposium on Global Multidisciplinary Engineering   2010年3月12日   
Low-temperature Annealing Effect on the Properties of ZnSnAs2 Thin Films grown InP substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, and N. Uchitomi
2009-nen (Heisei 21-Nen) Shuuki Dai-70-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 70th Autumn Meeting)   2009年9月8日   
14. Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP(001) substrates
Y. Agatsuma, J.T. Asubar, Y. Jinbo, and N. Uchitomi
14th International Conference on Narrow Gap Semiconductors and Systems   2009年7月13日   
High Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP substrates
J.T. Asubar, Y. Agatsuma, H. Yamaguchi, S. Nakamura, Y. Jinbo, and N. Uchitomi
14th International Conference on Narrow Gap Semiconductors and Systems   2009年7月13日   
Growth and Properties of MnAs Thin films on SiO2
K. Oomori, J. T. Asubar, Y. Jinbo, and N. Uchitomi
28th Electronics Materials Symposium (EMS-28)   2009年7月8日   
Fabrication and Structural Characterization of Nearly Lattice-matched p-ZnSnAs2/n-InP Heterojunctions
J.T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
IEEE Photonics Society, Indium Phosphide and Related Materials 2009 (IPRM2009)   2009年5月10日   
Growth and Annealing Effects of GeMn Thin Films on GaAs Substrates
R. Tsuchida, J. T. Asubar, N. Uchitomi, and Y. Jinbo
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-13)   2009年1月27日   
Ferromagnetic Mn-doped ZnSnAs2 Thin Films Lattice-matched with InP
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-13)   2009年1月27日   
High-Resolution X-ray Diffraction Studies of Molecular Beam Epitaxy-Grown ZnSnAs2 Epitaxial Films on InP(001) Substrates
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Heisei 20- Nendo Dai-37-kai Nihon Butsuri Gakkai Niigata Shibu (37th meeting of the Physical Society of Japan-Niigata Chapter 2008)   2008年12月21日   
MBE Growth and Characterization of Mn-doped Chalcopyrite ZnSnAs2 Thin Films on Si Substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, and N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2008 (Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2008)   2008年11月14日   
Evidence of Impurity Band Conduction In ZnSnAs2 Epitaxial Films
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Tagen keikinousei zairyou kenkyuukai 2008 (Annual Meeting of the Professional Group of Ternary and Multinary Compounds 2008)   2008年11月14日   
Room-temperature Ferromagnetism in Mn-doped ZnSnAs2 Thin Films grown on InP substrates
N. Uchitomi, J.T. Asubar, and Y. Jinbo
IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008 )   2008年10月20日   
MBE Growth of Mn-doped Zn-Sn-As on Si(001) Substrates
Y. Agatsuma, J. T. Asubar, Y. Jinbo, and N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter))   2008年10月8日   
Structural and Magnetic Properties of MnAs Thin Films Grown on Si Substrates
K. Ohmori, J. T. Asubar, R. Tsuchida, Y. Jinbo, and N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter))   2008年10月8日   
Mn-doped Ge Thin Film Growth and Its Electrical and Magnetic Properties
R. Tsuchida, J. T. Asubar, Y. Jinbo, and N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter))   2008年10月8日   
Growth, Structure and Carrier Transport Properties of ZnSnAs2 Epitaxial Films
J. T. Asubar, Y. Jinbo, and N. Uchitomi
Heisei 20-Nendo Dai-18-kai Denki Gakkai Toukyou Shibu Niigata Shisho Kenkyuukai Happyoukai (18th (2008) Electrical Engineering Conference (Niigata chapter))   2008年10月8日   
MBE Growth and Properties of GeMn Thin Films on GaAs(001)
R. Tsuchida, J. T. Asubar, N. Uchitomi, and Y. Jinbo
Denki, Joho, Tsushin Gakkai Shin’ Etsu Shibu Taikai IEEE Shin’Etsu Shibu Session (2008 Meeting of the Shin-Etsu Chapter of The Institute of Electronics, Information and Communication Engineers, The IEEE Shin-Etsu Session)   2008年9月27日   
Impurity Band Conduction and Negative Magnetoresistance in p-ZnSnAs2
J.T. Asubar, Y. Jinbo, and N. Uchitomi
16th International Conference on Ternary and Multinary Compounds (ICTMC-16)   2008年9月15日   
Carrier Transport Mechanism in ZnSnAs2 thin films
J. T. Asubar, Y. Jinbo, and N. Uchitomi
2008-nen (Heisei 20-Nen) Shuuki Dai-69-kai Ouyou Butsuri Gakkai Gakujutsu Koenkai (Japan Society of Applied Physics 68th Autumn Meeting)   2008年9月2日   
Growth, Structural and Transport Properties of ZnSnAs2 Thin Films on InP(001) Substrates
J. T. Asubar, S. Nakamura, Y. Jinbo, and N. Uchitomi
27th Electronics Materials Symposium (EMS-27)   2008年7月9日   
MBE Growth and Properties of GeMn thin films on (001) GaAs
R. Tsuchida, J.T. Asubar, Y. Jinbo, and N. Uchitomi
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)   2008年5月21日   
Low-temperature Annealing Effects on (Ga,Mn)As/Zn-GaAsSuperlattice Structure Grown on GaAs(001) substrates H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
H. Nakagawa, J.T. Asubar, Y. Jinbo, and N. Uchitomi
4thAsian Conference on Crystal Growth and Crystal Technology (CGCT-4)   2008年5月21日   
MBE Growth of Mn-doped ZnSnAs2 thin-films
J.T. Asubar, Y. Jinbo, and N. Uchitomi
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)   2008年5月21日   

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