Keiji ONO

J-GLOBAL         Last updated: Sep 18, 2018 at 16:07
Keiji ONO

Research Areas


Published Papers

Kawamura Minoru, Ono Keiji, Stano Peter, Kono Kimitoshi, Aono Tomosuke
PHYSICAL REVIEW LETTERS   115(3) 036601   Jul 2015   [Refereed]
Tanamoto Tetsufumi, Ono Keiji, Liu Yu-xi, Nori Franco
SCIENTIFIC REPORTS   5 10076   Jun 2015   [Refereed]
Tanamoto Tetsufumi, Ono Keiji, Liu Yu-xi, Nori Franco
SCIENTIFIC REPORTS   6 18508   Jun 2015   [Refereed]
Huang Shiu-Ming, Badrutdinov Alexander Olegovich, Kono Kimitoshi, Ono Keiji
JAPANESE JOURNAL OF APPLIED PHYSICS   52(4)    Apr 2013   [Refereed]
Takahashi Ryo, Kono Kimitoshi, Tarucha Seigo, Ono Keiji
APPLIED PHYSICS EXPRESS   5(2)    Feb 2012   [Refereed]


Keiji Ono, Takahiro Mori, Satoshi Moriyama
   Apr 2018
This study alleviates the low operating temperature constraint of Si qubits.
A qubit is a key element for quantum sensors, memories, and computers. Electron
spin in Si is a promising qubit, as it allows both long coherence times and
potential comp...
青野友祐, STANO Peter, 川村稔, 大野圭司, 小峰啓史
日本物理学会講演概要集(CD-ROM)   73(1) ROMBUNNO.24pK701‐7   Mar 2018
森貴洋, 森山悟士, 松川貴, 安田哲二, 大野圭司
応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th ROMBUNNO.19a‐G203‐3   Mar 2018
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   78th ROMBUNNO.6p‐A411‐9   Aug 2017
Keiji Ono, G. Giavaras, Tetsufumi Tanamoto, T. Ohguro, Xuedong Hu, Franco Nori
Phys. Rev. Lett. 119, 156802 (2017)      Jul 2017
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor
field-effect transistor. In the sub-threshold region, the measured source-drain
current reveals a double dot in the channel. The observed spin resonance
spectra agree wi...