2020年1月31日
Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium
Physical Review Letters
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- 巻
- 124
- 号
- 4
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevLett.124.047002
© 2020 American Physical Society. GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration xc=0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevLett.124.047002
- ISSN : 0031-9007
- eISSN : 1079-7114
- PubMed ID : 32058775
- SCOPUS ID : 85079517422