論文

査読有り
2014年2月

Defect-Assisted Heavily and Substitutionally Boron-Doped Thin Multiwalled Carbon Nanotubes Using High-Temperature Thermal Diffusion

JOURNAL OF PHYSICAL CHEMISTRY C
  • Yoong Ahm Kim
  • Shunta Aoki
  • Kazunori Fujisawa
  • Yong-Il Ko
  • Kap-Seung Yang
  • Cheol-Min Yang
  • Yong Chae Jung
  • Takuya Hayashi
  • Morinobu Endo
  • Mauricio Terrones
  • Mildred S. Dresselhaus
  • 全て表示

118
8
開始ページ
4454
終了ページ
4459
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/jp410732r
出版者・発行元
AMER CHEMICAL SOC

Carbon nanotubes have shown great potential as conductive fillers in various composites, macro-assembled fibers, and transparent conductive films due to their superior electrical conductivity. Here, we present an effective defect engineering strategy for improving the intrinsic electrical conductivity of nanotube assemblies by thermally incorporating a large number of boron atoms into substitutional positions within the hexagonal framework of the tubes. It was confirmed that the defects introduced after vacuum ultraviolet and nitrogen plasma treatments facilitate the incorporation of a large number of boron atoms (ca. 0.496 atomic %) occupying the trigonal sites on the tube sidewalls during the boron doping process, thus eventually increasing the electrical conductivity of the carbon nanotube film. Our approach provides a potential solution for the industrial use of macro-structured nanotube assemblies, where properties, such as high electrical conductance, high transparency, and lightweight, are extremely important.

リンク情報
DOI
https://doi.org/10.1021/jp410732r
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000332188100068&DestApp=WOS_CPL
ID情報
  • DOI : 10.1021/jp410732r
  • ISSN : 1932-7447
  • Web of Science ID : WOS:000332188100068

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