2014年2月
Defect-Assisted Heavily and Substitutionally Boron-Doped Thin Multiwalled Carbon Nanotubes Using High-Temperature Thermal Diffusion
JOURNAL OF PHYSICAL CHEMISTRY C
- 巻
- 118
- 号
- 8
- 開始ページ
- 4454
- 終了ページ
- 4459
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1021/jp410732r
- 出版者・発行元
- AMER CHEMICAL SOC
Carbon nanotubes have shown great potential as conductive fillers in various composites, macro-assembled fibers, and transparent conductive films due to their superior electrical conductivity. Here, we present an effective defect engineering strategy for improving the intrinsic electrical conductivity of nanotube assemblies by thermally incorporating a large number of boron atoms into substitutional positions within the hexagonal framework of the tubes. It was confirmed that the defects introduced after vacuum ultraviolet and nitrogen plasma treatments facilitate the incorporation of a large number of boron atoms (ca. 0.496 atomic %) occupying the trigonal sites on the tube sidewalls during the boron doping process, thus eventually increasing the electrical conductivity of the carbon nanotube film. Our approach provides a potential solution for the industrial use of macro-structured nanotube assemblies, where properties, such as high electrical conductance, high transparency, and lightweight, are extremely important.
- リンク情報
- ID情報
-
- DOI : 10.1021/jp410732r
- ISSN : 1932-7447
- Web of Science ID : WOS:000332188100068