We observed photoexcited carrier responses in solar cells excited by femtosecond laser pulses with spatial and temporal resolution using an optical pump-terahertz emission probe technique. We visualized the ultrafast local variation of the intensity of terahertz emission from a polycrystalline silicon solar cell using this technique and clearly observed the change in signals between a grain boundary and the inside of a grain in the solar cell. Further, the time evolution of the pump-probe signals of the polycrystalline and monocrystalline silicon solar cells was observed, and the relaxation times of photoexcited carriers in the emitter layers of crystalline silicon solar cells were estimated using this technique. The estimated relaxation time was consistent with the lifetime of the Auger recombination process that was dominant in heavily doped silicon used as an emitter layer for the silicon solar cells, which is difficult to obtain with photoluminescence method commonly used for the evaluation of solar cells.