1997年5月30日
In situ observation of anodic dissolution process of p-GaAs(001) in HCl solution by surface X-ray diffraction
Journal of Electroanalytical Chemistry
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- 巻
- 429
- 号
- 1-2
- 開始ページ
- 13
- 終了ページ
- 17
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/S0022-0728(97)00112-5
- 出版者・発行元
- Elsevier
The grazing incidence X-ray diffraction technique has been applied to monitor the anodic dissolution process of GaAs(001) in 0.1 M HCl solution. The surface diffraction intensity for the 〈11〉 direction of GaAs(001) was clearly observed and it decreased with time when the positive potential was applied to the electrode. © 1997 Elsevier Science S.A.
- リンク情報
- ID情報
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- DOI : 10.1016/S0022-0728(97)00112-5
- ISSN : 1572-6657
- SCOPUS ID : 0031141206