1996年10月
Evaluation of C15TCNQ Langmuir-Blodgett Ultrathin Films on Aluminum Thin Films by Attenuated Total Reflection Measurements
Japanese Journal Applied Physics
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- 巻
- 35
- 号
- 10
- 開始ページ
- 5466
- 終了ページ
- 5470
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.35.5466
- 出版者・発行元
- 社団法人応用物理学会
The attenuated total reflection (ATR) properties of C15TCNQ Langmuir-Blodgett (LB) ultrathin films deposited on the Al thin films about 20 nm thick were measured in order to evaluate the actual structure. The C15TCNQ LB ultrathin films were prepared by the vertical dipping method, using two deposition processes. The dielectric constants and the thicknesses of these deposited LB films were theoretically calculated from the ATR curves, taking into account the presence of the natural oxide layer on Al. It was considered that Z-type LB films were obtained when the deposition of each monolayer was carried out only as the substrates were withdrawn. In contrast, when monolayers were deposited during both upward and downward movements of the substrates, the resulting LB films were considered to be not perfect Y-type, but partially Z-type.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.35.5466
- ISSN : 0021-4922
- CiNii Articles ID : 110003904880
- CiNii Books ID : AA10457675