2015年2月
Improvement of On/Off Ratio in Organic Field-effect Transistor Having Thin Molybdenum Trioxide Layer
IEICE TRANSACTIONS ON ELECTRONICS
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- E98C
- 号
- 2
- 開始ページ
- 98
- 終了ページ
- 103
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1587/transele.E98.C.98
- 出版者・発行元
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
We fabricated organic field-effect transistors (OFETs) having a thin layer of molybdenum trioxide (MoO3), a Lewis acid, and evaluated their electrical characteristics. The insertion of a thin MoO3 layer reduces the on/off ratio but improves the apparent mobility of the charge carriers. To identify the dominant mechanism responsible for this effect, we characterized devices having a 69-nm-thick pentacene layer with a 1-nm-thick MoO3 layer either between the gold source and the drain electrodes or only directly under these electrodes. The former device exhibited a low on/off ratio, whereas the latter device exhibited an on/off ratio comparable to those of conventional pentacene OFETs without a thin MoO3 layer, suggesting that the formation of charge-transfer (CT) complexes immediately above the conduction channel is the critical mechanism. CT complexes at the pentacene/MoO3 interface immediately above the conduction channel contribute to the formation of an effective channel for off-currents as well as drain currents. Moreover, we also attempted to improve the on/off ratio by using a cloth to rub the surface of a thin MoO3 layer immediately above the conduction channel to create what we believe to be a profile with abrupt changes in height in the direction of the drain current conduction in OFETs. Consequently, it was found that such a rubbed MoO3 layer had a surface with a scratched pattern, and the on/off ratio of the OFET was improved, indicating that controlling the CT complex formation by patterning a MoO3 layer can reduce the off-current in OFETs having a pentacene/MoO3 active layer.
- リンク情報
- ID情報
-
- DOI : 10.1587/transele.E98.C.98
- ISSN : 1745-1353
- Web of Science ID : WOS:000359521400007