内田建 (Uchida Ken) - 論文

Noise power spectrum of a long-channel current line with electron traps: Slave-boson mean field theory

T Tanamoto, R Ohba, K Uchida, S Fujita

JOURNAL OF APPLIED PHYSICS 94(6) 3979-3983 2003年9月査読有り

Programmable single-electron transistor logic for future low-power intelligent LSI: Proposal and room-temperature operation

K Uchida, J Koga, R Ohba, A Toriumi

IEEE TRANSACTIONS ON ELECTRON DEVICES 50(7) 1623-1630 2003年7月査読有り

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

K Uchida, S Takagi

APPLIED PHYSICS LETTERS 82(17) 2916-2918 2003年4月査読有り

Ultra Small Random Number Generating Circuits With A Novel Noise Source Device

Shinichi Yasuda, Hideki Satake, Hanae Nozaki, Tetsufumi Tanamoto, Ryuji Ohba, Ken Uchida, Atsuhiro Kinoshita, Shinobu Fujita

Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials 2003年

Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and delta T-SOI-induced scattering

K Uchida, J Koga, S Takagi

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 805-808 2003年査読有り

Ultra-small physical random number generators based on Si NanoDevices for security systems and comparison to other large physical random number generators

S Yasuda, K Uchida, T Tanamoto, R Ohba, S Fujita

2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS 531-534 2003年査読有り

Narrow-channel-MOSFET having Si-dots for high-rate generation of random numbers

R Ohba, S Yasuda, T Tanamoto, K Uchida, S Fujita

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 745-748 2003年査読有り

Novel random number generators based on Si nanodevices for mobile communication security systems

S Fujita, K Uchida, S Yasuda, R Ohba, T Tanamoto

NANOTECH 2003, VOL 3 309-312 2003年査読有り

Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

K Uchida, H Watanabe, J Koga, A Kinoshita, S Takagi

2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 8-13 2003年査読有り

Nonvolatile Si quantum memory with self-aligned doubly-stacked dots

R Ohba, N Sugiyama, K Uchida, J Koga, A Toriumi

IEEE TRANSACTIONS ON ELECTRON DEVICES 49(8) 1392-1398 2002年8月査読有り

Non-volatile doubly stacked Si dot memory

R. Ohba, N. Sugiyama, K. Uchida, J. Koga, S. Fujita, A. Toriumi

2002 International Microprocesses and Nanotechnology Conference, MNC 2002 56-57 2002年査読有り

Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications

K Uchida, T Tanamoto, R Ohba, S Yasuda, S Fujita

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST 177-180 2002年査読有り

Device design for subthreshold slope and threshold voltage control in sub-100 nm fully-depleted SOI MOSFETs

T Numata, K Uchida, J Koga, S Takagi

2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 179-180 2002年査読有り

Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

K Uchida, H Watanabe, A Kinoshita, J Koga, T Numata, S Takagi

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST 47-50 2002年査読有り

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

K Uchida, J Koga, R Ohba, S Takagi, A Toriumi

JOURNAL OF APPLIED PHYSICS 90(7) 3551-3557 2001年10月査読有り

Power consumption of hybrid circuits of single-electron transistors and complementary metal-oxide-semiconductor field-effect transistors

K Uchida, J Koga, R Ohba, A Toriumi

IEICE TRANSACTIONS ON ELECTRONICS E84C(8) 1066-1070 2001年8月査読有り

Monte carlo simulation of sub-0.1 mu m devices with Schottky contact model

K Matsuzawa, K Uchida, A Nishiyama

IEICE TRANSACTIONS ON ELECTRONICS E83C(8) 1212-1217 2000年8月査読有り

Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors

K Uchida, K Matsuzawa, J Koga, S Takagi, A Toriumi

APPLIED PHYSICS LETTERS 76(26) 3992-3994 2000年6月査読有り

Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits

K Uchida, K Matsuzawa, J Koga, R Ohba, S Takagi, A Toriumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39(4B) 2321-2324 2000年4月査読有り

Influence of channel depletion on the carrier charging characteristics in Si nanocrystal floating gate memory

R Ohba, N Sugiyama, J Koga, K Uchida, A Toriumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39(3A) 989-993 2000年3月査読有り

内田建

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