2019年7月8日
Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900mV
Applied Physics Express
- ,
- ,
- ,
- ,
- 巻
- 12
- 号
- 8
- 開始ページ
- 081002-1
- 終了ページ
- 081002-5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/1882-0786/ab27fb
- 出版者・発行元
- Applied Physics Express
© 2019 The Japan Society of Applied Physics. The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm-3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm-3, yet we also demonstrate CdTe with >1017 cm-3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.
- リンク情報
- ID情報
-
- DOI : 10.7567/1882-0786/ab27fb
- ISSN : 1882-0778