茂藤 健太

Demonstration of Low Power and Multifunctional Neurons With Only Two or Five Ferroelectric SBFETs 

IEEE Transactions on Electron Devices 2026年2月  

Progress and perspectives on polycrystalline germanium thin films: Advances in solid-phase crystallization 

Applied Physics Reviews 12(3) 2025年9月1日  

High-Mobility p-Channel Thin-Film Transistors Based on Polycrystalline GeSn 

Advanced Electronic Materials 2025年4月  

Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization 

Japanese Journal of Applied Physics 63(2) 02SP42 2024年2月29日  査読有り

Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge 

IEEE Journal of the Electron Devices Society 11 553-558 2023年10月  査読有り

Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation 

Materials Science in Semiconductor Processing 165 2023年10月  査読有り

Solid-Phase Crystallization of GeSn Thin Films on GeO₂-Coated Glass 

Physica Status Solidi - Rapid Research Letters 16(1) 2022年1月  査読有り

Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors 

IEEE Electron Device Letters 42(12) 1735-1738 2021年12月1日  査読有り

Underlayer selection to improve the performance of polycrystalline Ge thin film transistors 

ECS Transactions 98(5) 423-427 2020年  査読有り

High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization 

Scientific Reports 9(1) 2019年11月  査読有り

Structural and optical properties of GaAs film grown on a glass substrate using a large-grained Ge seed layer for solar cell applications 

2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019年5月  

Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm2/V s) 

Applied Physics Letters 114(11) 112110-112110 2019年3月18日  査読有り

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass 

Applied Physics Letters 114(21) 212107-212107 2019年5月27日  査読有り

High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer 

Applied Physics Letters 114(14) 142103-142103 2019年4月  査読有り

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility 

Applied Physics Letters 114(8) 082105-082105 2019年2月25日  査読有り

High hole mobility (≥500 cm ² V ^-1 s ^-1 ) polycrystalline Ge films on GeO <inf>2</inf> -coated glass and plastic substrates 

Applied Physics Express 12(1) 015508-015508 2019年1月1日  査読有り

Improving carrier mobility of polycrystalline Ge by Sn doping 

Scientific Reports 8(1) 2018年10月4日  査読有り

Advanced solid-phase crystallization for high-hole mobility (450 cm2 V−1 s−1) Ge thin film on insulator 

Applied Physics Express 11(3) 031302-031302 2018年1月  査読有り

Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C) 

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings 241-243 2017年8月8日