2020年12月21日
Spectral absorptance of a metal-semiconductor-metal thin-multilayer structured thermophotovoltaic cell
Optics Express
- ,
- ,
- 巻
- 28
- 号
- 26
- 開始ページ
- 40099
- 終了ページ
- 40111
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1364/OE.410828
© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Spectral absorptance of a metal-semiconductor-metal (MSM) thin-multilayer structured thermo-photovoltaic cell was experimentally investigated. A MSM consists of a thin GaSb-semiconductor sandwiched between a top fishnet-type electrode and a flat backside electrode made of gold. A thin GaSb layer was grown on a substrate made of InAs using molecular beam epitaxy, and then all of the InAs substrate was removed using wet etching. The GaSb film was bonded on a surface of gold, which was sputtered on a Si substrate, using a van der Waals bonding method. The top fishnet-type electrode was made using electron beam lithography and a lift-off process. In the case of a 115 nm thick GaSb layer and a square fishnet aperture of a 300 nm × 310 nm size, the spectral absorptance of MSM reached a local peak (95%) at a wavelength of 1.66 µm, which is similar to spectra predicted by numerical simulation. Moreover, the equivalent resonance cavity model and LC circuit model functioned well to indicate the wavelength of several distinct peaks of absorptance.
- リンク情報
- ID情報
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- DOI : 10.1364/OE.410828
- eISSN : 1094-4087
- PubMed ID : 33379543
- SCOPUS ID : 85098698425