2011年
Silicon precipitation in glass via photoinduced reaction using femtosecond laser
IOP Conference Series: Materials Science and Engineering
- ,
- ,
- ,
- ,
- ,
- 巻
- 18
- 号
- 8
- 開始ページ
- 112007
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1088/1757-899X/18/11/112007
We have succeeded in precipitation of silicon nanoparticles inside silicate glass containing Al metal film using femtosecond laser irradiation. The Al-inserted sandwiched glass was fabricated by direct bonding. Raman spectra indicated that silicon particles were formed at the interface between the glass and the Al film after the fs laser irradiation. In addition, the crystallinity of silicon particles was dramatically changed by changing the laser irradiation conditions
amorphous and crystalline silicon were formed by 1 kHz and 250 kHz fs laser irradiation, respectively. The deposited silicon was detected at an area 1 μm away from the focal point perpendicular to the direction of incident laser beam. © 2011 Ceramic Society of Japan.
amorphous and crystalline silicon were formed by 1 kHz and 250 kHz fs laser irradiation, respectively. The deposited silicon was detected at an area 1 μm away from the focal point perpendicular to the direction of incident laser beam. © 2011 Ceramic Society of Japan.
- ID情報
-
- DOI : 10.1088/1757-899X/18/11/112007
- ISSN : 1757-8981
- ISSN : 1757-899X
- SCOPUS ID : 80052095671