Katsuhiko Nishiguchi

Profile Information

Affiliation: Group Leader, Distinguished Researcher, NTT Basic Research Laboratories

Degree: Doctor of engineering(Tokyo Institute of Technology)

Researcher number: 00393760
ORCID ID: https://orcid.org/0000-0002-1233-4927
J-GLOBAL ID: 201801004618075013
Researcher ID: Q-7547-2018
researchmap Member ID: B000302505

External link: http://www.brl.ntt.co.jp/people/knishi50/index.html

Research Interests

Research Areas

Research History

Apr, 2020 - Present

Nanodevices Research Group, NTT Basic Research Laboratories
Apr, 2024 - Sep, 2024

Part-Time Lecturer, Tokyo Institute of Technology
Oct, 2015 - Mar, 2016

Visiting Associate Professor, Department of Materials Science and Engineering, Interdiscriplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Aug, 2012 - Aug, 2013

Visiting Researcher, Delft University of Technology
Jun, 2008 - Jun, 2008

Visiting Researcher, Centre national de la recherche scientifique, CNRS
Apr, 2002

Researcher, Silicon Nanodevices Research Group, Device Physics Research Laboratory, NTT Basic Research Laboratories

Education

Apr, 2000 - Mar, 2002

Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
Apr, 1998 - Mar, 2000

Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology

Committee Memberships

2023 - Present

Organizing Committee Vice Chair, MNC International Microprocesses and Nanotechnology (MNC)
2021 - Present

Program Committee, Silicon Nanoelectronics Workshop
2022 - 2022

Steering Committee Chair, MNC International Microprocesses and Nanotechnology (MNC)
2019 - 2021

Program chair, MNC International Microprocesses and Nanotechnology (MNC)
2018 - 2019

International Microprocesses and Nanotechnology Conference (MNC) Program vice chair, MNC
2014 - 2016

International Microprocesses and Nanotechnology Conference (MNC) Program vice chair, MNC
2008 - 2014

International Microprocesses and Nanotechnology Conference (MNC) Program committee member, MNC
2009 - 2011

International Conference on Solid State Devices and Materials (SSDM) Program committee member, SSDM

Awards

Nov, 2023

Most Impressive Presentation Award, Room-temperature single-electron sensor for AC signals beyond an RC time constant, 36th International Microprocesses and Nanotechnology Conference (MNC 2023)

Katsuhiko Nishiguchi, Akira Fujiwara, Kensaku Chica
2013

The Young Scientists’ Prize, the Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology of Japan, the Minister of Education, Culture, Sports, Science and Technology,

Katsuhiko Nishiguchi
2013

JSAP Outstanding paper award 2013, Single-Electron Stochastic Resonance Using Si Nanowire Transistors”, JSAP

Katsuhiko Nishiguchi
2000

2000 Young Scientist Award, Japan Society of Applied Physics (JSAP) 2000 Spring Meeting, Ballistic transport under magnetic field in silicon vertical transistors, JSAP

Katsuhiko Nishiguchi
2000

Graduate Student Award Silver, Materials Research Society 2000 Fall Meeting, Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots, MRS

Katsuhiko Nishiguchi
2000

IUPAP Young Author Best Paper Award, International Conference on Physics of Semiconductors, Ballistic transport under magnetic field in silicon vertical transistors, IUPAP

Katsuhiko Nishiguchi

Papers

125

Sub-Femtoampere-Current Detection Using Single-Electron Sensor Operated Around 295 K

Katsuhiko Nishiguchi, Gento Yamahata

IEEE Electron Device Letters, 45(7) 1373-1376, Jul, 2024 Peer-reviewed
Valley splitting by extended zone effective mass approximation incorporating strain in silicon

J. Noborisaka, T. Hayashi, A. Fujiwara, K. Nishiguchi

Journal Applied Physics, 135(20) 204302, May, 2024 Peer-reviewedLast author
Ballistic Brownian Motion of Nanoconfined DNA

Ignacio Madrid, Zhiyong Zheng, Cedric Gerbelot, Akira Fujiwara, Shuo Li, Simon Grall, Katsuhiko Nishiguchi, Soo Hyeon Kim, Arnaud Chovin, Christophe Demaille …

ACS Nano, 17(17) 17031-17040, Aug 24, 2023 Peer-reviewed
Single-Cell Electrochemical Aptasensor Array

Shuo Li, Yannick Coffinier, Chann Lagadec, Fabrizio Cleri, Katsuhiko Nishiguchi, Akira Fujiwara, Soo Hyeon Kim, Nicolas Clément

ACS Sensors, 8(8) 2921-2926, Jul 11, 2023 Peer-reviewed
Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics

Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi

Applied Physics Letters, 122 213502-1-213502-5, May, 2023 Peer-reviewedLast author
Statistical Properties of Electric Potentials in a Variable-Range Hopping Regime

Toshiaki Hayashi, Yasuhiro Tokura, Katsuhiko Nishiguchi

Journal of the Physical Society of Japan, 92(3) 034001-1-034001-5, Mar 15, 2023 Peer-reviewedLast author
Subgigahertz Multilayer-Graphene Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven by Reflectometry

Katsuhiko Nishiguchi, Hiroshi Yamaguchi, Akira Fujiwara

Physical Review Applied, 19(1), Jan 27, 2023 Peer-reviewedLead authorCorresponding author
Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using a silicon transistor

Katsuhiko Nishiguchi, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, Gary A. Steele

Applied Physics Letters, 122(4) 043502-043502, Jan 23, 2023 Peer-reviewedLead authorCorresponding author
Redox-labelled electrochemical aptasensors with nanosupported cancer cells

S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, T. Fujii, S.-H. Kim, N. Clément

Biosensors and Bioelectronics, 216 114643-114643, Nov, 2022 Peer-reviewed
Seebeck effect in a nanometer-scale dot in a Si nanowire observed with electron counting statistics

Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi

Applied Physics Letters, 121(18) 183501-183501, Oct 31, 2022 Peer-reviewedLast author
(Invited) Single-Electron Manipulation in an Attofarad-Capacitor DRAM

Katsuhiko Nishiguchi, Kensaku Chida, Akira Fujiwara

ECS Transactions, 104(4) 33-48, Oct 1, 2021 Peer-reviewedInvitedLead authorCorresponding author
Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing

APL Materials, Mar 1, 2020 Peer-reviewed
(Invited) Characteristics of Si Single-Electron Transistor under Illumination

ECS Transactions, Jul, 2019 Peer-reviewed
Single-Electron-Resolution Noise Analysis and Application Using High-Sensitivity Charge Sensor

Katsuhiko Nishiguchi

AAPPS Bulletin, Jun 14, 2019 Peer-reviewed
Selective layer-free blood serum ionogram based on ion-specific interactions with a nanotransistor

R. Sivakumarasamy, R. Hartkamp, B. Siboulet, J. F. Dufrêche, K. Nishiguchi, A. Fujiwara, N. Clément

Nature Materials, 17(5) 464-470, May 1, 2018 Peer-reviewed
Electrical current generation by sorting thermal noise

Kensaku Chida, Katsuhiko Nishiguchi, Akira Fujiwara

NTT Technical Review, 16(2), Feb 16, 2018
Ultimate single electronics with silicon nanowire MOSFETs

Akira Fujiwara, Katsuhiko Nishiguchi, Gento Yamahata, Kensaku Chida

2017 Silicon Nanoelectronics Workshop, SNW 2017, 2017- 21, Dec 29, 2017
Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

M. Matys, S. Kaneki, K. Nishiguchi, B. Adamowicz, T. Hashizume

JOURNAL OF APPLIED PHYSICS, 122(22), Dec, 2017 Peer-reviewed
Power generator driven by Maxwell's demon

Kensaku Chida, Samarth Desai, Katsuhiko Nishiguchi, Akira Fujiwara

NATURE COMMUNICATIONS, 8, May, 2017 Peer-reviewed
Hydrogen Silsesquioxane-Based Nanofluidics

Sathyanarayanan Punniyakoti, Ragavendran Sivakumarasamy, Francois Vaurette, Pierre Joseph, Katsuhiko Nishiguchi, Akira Fujiwara, Nicolas Clement

ADVANCED MATERIALS INTERFACES, 4(7), Apr, 2017 Peer-reviewed

Misc.

Fabrication of triple-dot single-electron transistor and its turnstile operation

M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi

Proceedings of the 29th International Microprocesses and Nanotechnology Conference, Jun, 2016 Peer-reviewed
Light emission from Silicon quantum-well by tunneling current injection

NOBORISAKA Jinichiro, NISHIGUCHI Katsuhiko, KAGESHIMA Hiroyuki, FUJIWARA Akira

IEICE technical report. Electron devices, 111(425) 41-46, Feb 7, 2012
Stochastic resonance using a steep-subthreshold-swing transistor

NISHIGUCHI Katsuhiko, FUJIWARA Akira

IEICE technical report. Electron devices, 111(425) 71-76, Feb 7, 2012
シリコン?ナノワイヤ?トランジスタ確率共鳴素子による高速センサ

西口克彦

第59回応用物理学関係速合講演会講演予稿?,2012, 6, 2012
Stochastic resonance using single electons

NISHIGUCHI Katsuhiko, FUJIWARA Akira

IEICE technical report, 110(423) 73-77, Feb 16, 2011
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor

NISHIGUCHI Katsuhiko, KOECHLIN Charlie, ONO Yukinori, FUJIWARA Akira, INOKAWA Hiroshi, YAMAGUCHI Hiroshi

IEICE technical report, 108(122) 119-124, Jul 2, 2008
Stochastic data processing based on single electrons using nano-MOSFETs : Detection and control of stochastic behavior of single electrons

NISHIGUCHI Katsuhiko, FUJIWARA Akira

IEICE technical report, 107(474) 75-79, Jan 23, 2008
Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors

INOKAWA Hiroshi, FUJIWARA Akira, NISHIGUCHI Katsuhiko, ONO Yukinori

2007 874-875, Sep 19, 2007
Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs

FUJIWARA Akira, NISHIGUCHI Katsuhiko, ONO Yukinori

2007 1144-1145, Sep 19, 2007
Spectrally tunable nanoscale silicon field-effect transistor detects 1.5 mu m light

Katsuhiko Nishiguchi

LASER FOCUS WORLD, 43(7) 15-15, Jul, 2007
Room-temperature-operating single-electron devices using silicon nanowire MOSFET

NISHIGUCHI Katsuhiko, ONO Yukinori, FUJIWARA Akira, INOKAWA Hiroshi, TAKAHASHI Yasuo

IEICE technical report, 107(110) 147-150, Jun 18, 2007
Low-energy electron emission using a Si/SiO2/Si cathode for nano-decomposition

K. Nishiguchi, M. Nagase, T. Yamaguchi, A. Fujiwara, H. Yamaguchi

MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, 470-471, 2007
未来を拓く先端技術シリコン単電子デバイス集積化の最近の展望

猪川洋, 西口克彦, 藤原聡

NTT技術ジャ-ナル, 18(3) 79-82, Mar, 2006
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature : Fabrication using SOI and measurements of its characteristics

NISHIGUCHI Katsuhiko, ONO Yukinori, FUJIWARA Akira, INOKAWA Hiroshi, TAKAHASHI Yasuo

IEICE technical report, 105(549) 23-28, Jan 19, 2006
Room-temperature single-electron transfer and detection using silicon nanodevices : Fabrication using SOI and measurements of its characteristics

NISHIGUCHI Katsuhiko, INOKAWA Hiroshi, ONO Yukinori, FUJIWARA Akira, TAKAHASHI Yasuo

IEICE technical report. Electron devices, 104(623) 11-17, Jan 28, 2005
Multifunctional Boolean Logic Using Single-Electron Transistors

NISHIGUCHI Katsuhiko, INOKAWA Hiroshi, ONO Yukinori, FUJIWARA Akira, TAKAHASHI Yasuo

IEICE transactions on electronics, 87(11) 1809-1817, Nov 1, 2004
Evidence of Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode

Y. Tsuchiya T, Nakatsukasa, R. Nakamura, K. Nishiguchi, S. Oda, A. Kojima, N. Koshida

FEMD Newsletter, 2003
ナノクリスタルシリコン平面型ホットエレクトロン放出素子の特性向上

西口克彦, 趙新為, 小田俊理

第49回応用物理学関係連合講演会, 495,935, 2002
Enhancement of Electron Emission Characteristics from Nanocrystalline Silicon by Planarization Technique

K. Nishiguchi, X. Zhao S. Oda

Device Research Conference, 2001
ナノクリスタルシリコン平面型電子放出素子の最適化

西口克彦, 趙新為, 小田俊理

第48回応用物理学関係連合講演会, 2001

Presentations

Electron Thermometry using Subthreshold Swing of Si Nano Transistors

Hossain Md Nayem, Masahiro Hori, Katsuhiko Nishiguchi, Yukinori Ono

37th International Microprocesses and Nanotechnology Conference (MNC2024), Nov 14, 2024
AC-signal sensing beyond cutoff frequency using a DRAM

Chloe Salhani, Kensaku Chida, Toshiaki Hayashi, Katsuhiko Nishiguchi

37th International Microprocesses and Nanotechnology Conference (MNC2024), Nov 14, 2024
Ferromagntic manganese silicide nanoparticles formed by ion implantation in silicon

Rento Ohsugi, Makoto Kawano, Yuuki Wakabayashi, Yoshiharu Krockenberger, Hisashi Sumikura, Jinichirou Noborisaka, Katsuhiko Nishiguchi

The 85th JSAP Autumn Meeting 2024, Sep 20, 2024
Energy Efficiency Limits of DRAM Cells: High-Precision Measurement Using Single-Electron Counting

Takase Shimizu, Kensaku Chida, Gento Yamahata, Katsuhiko Nishiguchi

The 85th JSAP Autumn Meeting 2024, Sep 19, 2024
Cross-correlation measurement of single-electron thermal motion in capacitively-coupled nanometer-scale dots

Kensaku Chisa, Antoine Andrieux, Katsuhiko Nishiguchi

The 85th JSAP Autumn Meeting 2024, Sep 19, 2024
First-principal calculations on valley splitting in Si quantum wells stressed in the [110] direction

Toshiaki Hayashi, Hiroyuki Kageshima, Jinichiro Noborisaka, Katsuhiko Nishiguchi

The 85th JSAP Autumn Meeting 2024, Sep 18, 2024
AC Signal Sensing 6 Orders of Magnitude above Cutoff Frequency in Non-equilibrium DRAM

Chloe Salhani, Kensaku Chida, Toshiaki Hayashi, Katsuhiko Nishiguchi

The 85th JSAP Autumn Meeting 2024, Sep 19, 2024
Noise Cross-Correlation Measurement of Capacitively-Coupled Silicon Nanometer-Scale Dots via Electron Counting Statistics

Kensaku Chida, Antoine Andrieux, Katsuhiko NIshiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul 30, 2024
Energy Costs of Precise Erasure for Nanoscale Silicon Dot Memory with Non-equilibrium Initial State

Takase Shimizu, Kensaku Chida, Gento Yamahata, Katsuhiko Nishiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul 29, 2024
First-principal calculations for giant valley splitting in stressed silicon thin films

Toshiaki Hayashi, Hiroyuki Kageshima, Jinichiro Noborisaka, Katsuhiko Nishiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul 29, 2024
Experimental verification of Landauer principle under a constraint of nonequilibrium initial state

T. Shimizu, K. Chida, G. Yamahata, K. Nishiguchi

Frontiers in Non-equilibrium Physics 2024, Jul 11, 2024
AC Signal-Sensing 6 Orders of Magnitude above Cutoff Frequency in DRAMs with a Non-Equilibrium Nanoscale Dot

Chloe Salhani, Kensaku Chida, Toshiaki Hayashi, Katsuhiko Nishiguchi

International Conference on the Physics of Semiconductors (ICPS) 2024, Jul 30, 2024
Noise-to-energy conversion in silicon single-electron nanodevices

K. Chida, A. Fujiwara, K. Nishiguchi

2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), Jul 9, 2024 Invited
Ferromagnetic Manganese Silicide Nanoparticles Formed by Ion Implantation in Silicon

R, Ohsugi, M. Kawano, Y. K. Wakabayashi, Y. Krockenberger, H. Sumikura, J. Noborisaka, K. Nishiguchi

Silicon Nanoelectronics Workshop 2024, Jun 15, 2024
Housekeeping heat for an aF capacitor DRAM in nonequilibrium steady states

Kensaku Chida, Chloe Salhani, Takase Shimizu, Katsuhiko Nishiguchi

JSAP Spring Meeting 2024, Mar 23, 2024
Si量子井戸における谷分離の研究に対する第一原理計算の有効性について

林稔晶, 影島博之, 登坂仁一朗, 西口克彦

NIMS ナノワークショップ, Dec 6, 2023 Invited
Observation of energy transport in an aF DRAM under white noise input [21a-A501-9]

Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi

JSAP Autumn Meeting 2023, Sep 21, 2023
First-principles calculations on valley splitting in a Si quantum well [21a-A304-7]

Toshiaki Hayashi, Hiroyuki Kageshima, Jinichiro Noborisaka, Akira Fujiwara, Katsuhiko Nishiguchi

JSAP Autumn Meeting 2023, Sep 21, 2023
Valley splitting by extended zone effective mass approximation incorporating strain [21a-A304-6]

Jinichiro Noborisaka, Toshiaki Hayashi, Akira Fujiwara, Katsuhiko Nishiguchi

JSAP Autumn Meeting 2023, Sep 21, 2023
Correlation between electric potentials in a variable-range hopping regime [T4-11C-05]

Toshiaki Hayashi, Yasuhiro Tokura, Katsuhiko Nishiguchi

STATPHYS28, Aug 11, 2023

Professional Memberships

Research Projects

Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, Apr, 2012 - Mar, 2015

TAKAHASHI Yasuo, ARITA Masashi, ONO Yukinori, NISHIGUCHI Katsuhiko, FUJIWARA Akira
Silicon Single-Dopant Electronics

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (A), Japan Society for the Promotion of Science, 2008 - 2011

ONO Yukinori, TSUCHIYA Toshiaki, HORIGUCHI Seiji, NISHIGUCHI Katsuhiko, YAMAGUCHI Toru, MOHAMMED Khalafalla
Studies on single-electron devices and circuits based on silicon integrated circuit process

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2007 - 2009

INOKAWA Hiroshi, FUJIWARA Akira, NISHIGUCHI Katsuhiko
シリコンナノドットを用いた論理機能選択デバイス

科学研究費助成事業, 特定領域研究, 日本学術振興会, 2007 - 2007

高橋庸夫, 有田正志, 藤原聡, 西口克彦
Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (A), Japan Society for the Promotion of Science, 2005 - 2007

TAKAHASHI Yasuo, ARITA Masashi, AMEMIYA Yoshihito, INOKAWA Hiroshi, NISHIGUCHI Katsuhiko
Control of single electrons using bonor levels in silicon

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (A), Japan Society for the Promotion of Science, 2004 - 2007

ONO Yukinori, TAKAHASHI Yasuo, INOKAWA Hiroshi, FUJIWARA Akira, NISHIGUCHI Katsuhiko

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