論文

査読有り
2014年7月

Low-Temperature Synthesis of High-Adhesion Cu(Mg) Alloy Films on Glass Substrates

JOURNAL OF ELECTRONIC MATERIALS
  • Kazuhiro Ito
  • ,
  • Keiji Hamasaka
  • ,
  • Kazuyuki Kohama
  • ,
  • Yasuharu Shirai
  • ,
  • Masanori Murakami

43
7
開始ページ
2540
終了ページ
2547
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1007/s11664-014-3224-0
出版者・発行元
SPRINGER

Cu(0.5 at.%Mg) alloy films were deposited on glass substrates, and annealed at 200-400 A degrees C in vacuum. The resistivity of the Cu(Mg) films was reduced to about 3.0 mu Omega cm after annealing at 200 A degrees C for 30 min, and the tensile strength of adhesion of the Cu(Mg) films to the glass substrates was increased to 30-40 and 35-55 MPa after annealing at 250 and 300 A degrees C, respectively. The reduction in resistivity can be explained as reduced impurity scattering and grain-boundary scattering, since Mg segregation to the film surface and Cu(Mg)/glass interface, and consequent Cu grain growth, were observed. Increased adhesion of the Cu(Mg) films to glass substrates after annealing was also explained by the strong segregation of Mg atoms, and the formation of a reaction layer at the interface. Mg atoms were observed to have reacted with the glass substrates and formed a thin crystalline MgO layer at the interface in the samples annealed at 300 A degrees C, while Mg atoms were highly concentrated above the Cu(Mg)/glass interface without oxide formation at the interface in the samples annealed at 250 A degrees C. Thus, the process temperature and time to obtain low-resistivity and high-adhesion Cu alloy films on glass substrates could be reduced to 250 A degrees C and 30 min using Cu(Mg) films.

リンク情報
DOI
https://doi.org/10.1007/s11664-014-3224-0
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000336796700009&DestApp=WOS_CPL
ID情報
  • DOI : 10.1007/s11664-014-3224-0
  • ISSN : 0361-5235
  • eISSN : 1543-186X
  • Web of Science ID : WOS:000336796700009

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