嶋 紘平

■Research Interest

Elucidating Fundamental Physics of Wide Bandgap Nitride Semiconductors for Advanced Optoelectronic and Power Devices

Main research directions include:

(1) Investigating the formation mechanisms and roles of intrinsic defects and impurities, especially vacancy-type defects, in determining the luminescence properties and carrier dynamics of group III-nitrides (InN, GaN, AlN, and BN), group II-oxides (ZnO and MgO), and their alloys.

(2) Developing advanced characterization techniques, including spatio-time-resolved luminescence spectroscopy to precisely evaluate recombination lifetimes and defect structures in wide bandgap semiconductors.

(3) Optimizing material growth and processing techniques, such as ion implantation and annealing, to control defect formation and enhance the performance of p-type GaN and related heterostructures for high-efficiency devices.

(4) Exploring novel wide bandgap materials and heterojunctions (e.g., polytypes of hexagonal BN, nitride/diamond) for next-generation deep-UV light emitters and power electronics.

 ■ CV_KoheiShima_260213ver.pdf

 ■ Lab homepage

 ■ Born Oct. 3, 1988