Kayo Koike - My portal

Profile Information

Affiliation: RIKEN

Degree: 博士（工学）(北九州市立大学)

J-GLOBAL ID: 201901005942737308
researchmap Member ID: B000361897

Research Interests

Research Areas

Nanotechnology/Materials / Energy chemistry / Renewable energy

Research History

Apr, 2017 - Present

理化学研究所
Nov, 2012 - Mar, 2017

Graduate School of Engineering Institute of Engineering Innovation, The University of Tokyo
Apr, 2010 - Sep, 2012

株式会社 Wavesquare（韓国）
Jan, 2008 - Mar, 2010

Center for Interdisciplinary Research, Tohoku University
Apr, 2006 - Jan, 2007

中村不均一結晶プロジェクト, 科学技術振興機構
Oct, 2005 - Mar, 2006

Tokyo University of Science

Awards

Mar, 2019

桜舞賞, 理化学研究所

小池佳代

Papers

Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements

Kayo Koike, Takenari Goto, Shinichiro Nakamura, Satoshi Wada, Katsushi Fujii

MRS COMMUNICATIONS, 8(2) 480-486, Jun, 2018 Peer-reviewed
Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes

Kayo Koike, Kazuhiro Yamamoto, Satoshi Ohara, Tomoka Kikitsu, Kazunari Ozasa, Shinichiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 42(15) 9493-9499, Apr, 2017 Peer-reviewed
Photoelectrochemical Property Differences between NiO Dots and Layer on n-Type GaN for Water Splitting

Kayo Koike, Kazuhiro Yamamoto, Satoshi Ohara, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 163(13) H1091-H1095, 2016 Peer-reviewed
A 24.4% solar to hydrogen energy conversion efficiency by combining concentrator photovoltaic modules and electrochemical cells

Akihiro Nakamura, Yasuyuki Ota, Kayo Koike, Yoshihide Hidaka, Kensuke Nishioka, Masakazu Sugiyama, Katsushi Fujii

APPLIED PHYSICS EXPRESS, 8(10), Oct, 2015 Peer-reviewed
Surface stability of n-type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions

Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 11(3-4) 821-823, 2014 Peer-reviewed
The Effect of Rapid Temperature Annealing with N-2 and H-2 on Photoelectrochemical Properties of u-TiO2

Hyojung Bae, Seung Hwan Park, Akihiro Nakamura, Kayo Koike, Katsushi Fujii, Hyung-Jo Park, Hyo-Jong Lee, Tae-Sung Oh, Jun-Seok Ha

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 160(11) H800-H802, 2013 Peer-reviewed
Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED via V-Pit Formation

Kayo Koike, Seogwoo Lee, Sung Ryong Cho, Jinsub Park, Hyojong Lee, Jun-Seok Ha, Soon-Ku Hong, Hyun-Yong Lee, Meoung-Whan Cho, Takafumi Yao

IEEE PHOTONICS TECHNOLOGY LETTERS, 24(6) 449-451, Mar, 2012 Peer-reviewed
Photoluminescence changes in n-type GaN samples after photoelectrochemical treatment

Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh, Takafumi Yao

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 9(3-4) 715-718, 2012 Peer-reviewed
Time dependence of water-reducing photocurrent with change of the characteristics of n-type GaN photo-illuminated working electrodes

Katsushi Fujii, Kayo Koike, Mika Atsumi, Takenari Goto, Takashi Itoh, Takafumi Yao

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 8(7-8), 2011 Peer-reviewed
Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias

Kayo Koike, Keiichi Sato, Katsushi Fujii, Takenari Goto, Takafumi Yao

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 7(7-8), 2010 Peer-reviewed
Anomalous time variation of photocurrent in GaN during photoelectrochemical reaction for H(2) gas generation in NaOH aqueous solution

Keiichi Sato, Katsushi Fujii, Kayo Koike, Takenari Goto, Takafumi Yao

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6 S635-S638, 2009 Peer-reviewed
Surface changes by GaN photoelectrochemical treatment using various electrolytes with and without C(2)H(5)OH

Katsushi Fujii, Keiichi Sato, Takashi Kato, Kayo Koike, Takafumi Yao

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 6 S627-S630, 2009 Peer-reviewed

Presentations

DC-controlled User-on-Demand Power Supply System with Water Splitting Hydrogen Energy Storage

Katsushi Fujii, Daiji Yamashita, Kayo Koike, Katsuhiko Tsuno, Masakazu Sugiyama, Satoshi Wada

8th World Hydrogen Technologies Convention
The Importance of MEA Fabrication Process for Water Splitting Electrochemical Cell

Kayo Koike, Takayo Ogawa, Satoshi Wada, Katsushi Fujii

8th World Hydrogen Technologies Convention
Experimental and theoretical study of photoelectrochemical reaction mechanism of GaN photoanode with NiO for water splitting application

Nicolas JAVAHIRALY, Kayo KOIKE, Katsushi FUJII

8th World Hydrogen Technologies Convention
n型GaNを用いた光電気化学反応における光誘起電流の時間依存性

佐藤啓一, 藤井克司, 小池佳代, 後藤武生, 八百隆文

第69回応用物理学会学術講演会
GaNを用いた光電気化学反応の時間変化に対する光強度と印加電圧の影響

佐藤啓一, 藤井克司, 小池佳代, 八百隆文

第56回応用物理学会学術講演会
表面に金属窒化物（ScN, TiN, ZrN）を形成したn型GaNの光電気化学反応

河俊碩, 李孝鐘, 藤井克司, 佐藤啓一, 小池佳代, 八百隆文

第70回応用物理学会学術講演会
GaNの光電気化学特性に結晶成長方法が与える影響

藤井克司, 加藤崇, 佐藤啓一, 小池佳代, 山田高広, 山根久典, 八百隆文

第57回応用物理学会学術講演会
n型GaNの特性が水還元水素生成光誘起電流の時間変化に与える影響

藤井克司, 小池佳代, 熱海美香, 後藤武生, 八百隆文

第71回応用物理学会学術講演会
窒化物半導体光電極におけるNiO助触媒の担持効果

小畑圭亮, 熊譜珂, 脇一太郎, 中村亮裕, 小池佳代, 藤井克司, 杉山正和

第21回光触媒シンポジウム
n型GaN光電極上の島状NiOとNiO層構造の光電気化学特性

小池佳代, 山本和広, 大原智, 杉山正和, 中野義昭, 藤井克司

第77回応用物理学会学術講演会
GaNにおけるOpen-Circuit-Potential (OCP)の光強度依存性へのと表面処理の効果

岩井耀平, 中村亮裕, 小池佳代, 中野義昭, 藤井克司, 杉山正和

第77回応用物理学会学術講演会
n型GaN光電気化学水酸化反応における半導体－電解液界面のキャリア移動モデルとその物理

藤井克司, 小池佳代, 後藤武生

第77回応用物理学会学術講演会
水分解水素生成のためのn型GaN光電極上のNiO評価とメカニズムについて

小池佳代, 藤井克司, 和田智之

第1回北九州市立大－理化学研究所合同会合公開ワークショップ
n型GaN光電極とNiO触媒を用いた光電気化学反応による水分解水素生成

小池佳代

平成29年度応用物理学会九州支部学術講演会 Invited
水分解におけるn型GaN光陽極上のNiO触媒の特性と反応機構モデル

小池佳代, 山本和広, 大原智, 杉山正和, 和田智之, 藤井克司

第65回応用物理学会学術講演会
Anomalous Time Dependence of Photocurrent in GaN during Photoelectrochemical Reaction for H2 Gas Generation in NaOH Aqueous Solution

Keiichi Sato, Katsushi Fujii, Kayo Koike, Takenari Goto, Takafumi Yao

International Workshop on Nitride Semiconductors
Surface Changes by GaN Photoelectrochemical Treatment using Various Electrolytes with and without C2H5OH

Katsushi Fujii, Keiichi Sato, Takashi Kato, Kayo Koike, Takafumi Yao

International Workshop on Nitride Semiconductors
Time Variation of Photoelectrochemical Reaction using GaN Affected by Bias and Light Intensity

Keiichi Sato, Katsushi Fujii, Kayo Koike, Takafumi Yao

The 4th International Symposium on Medical, Bio- and Nano-Electronics
Investigation of Structural Imperfections in M-GaN Films Grown on m-Plane (10-10) Al2O3 Substrates by using Hydride Vapor Phase Epitaxy (HVPE): Anti-Phase Domains, Twins, Asymmetrical Wafer Bowing and Crystallinity

Hyun-Jae Lee, Jiho Chang, Chinkyo Kim, Si-Young Kim, Kayo Koike, Katsushi Fujii, Takenari Goto, Takafumi Yao

8th International Conference on Nitride Semiconductors
Stress Study of Free-Standing GaN Self-Separated by Using an Evaporable Buffer Layer (EBL)

Hyun-Jae Lee, Takenari Goto, Chinkyo Kim, Jiho Chang, Kayo Koike, Katsushi Fujii, Soon-Ku Hong, Meoung-Whan Cho, Takafumi Yao

8th International Conference on Nitride Semiconductors

Professional Memberships

THE JAPAN SOCIETY OF APPLIED PHYSICS

Industrial Property Rights

特許第4396268号窒化物半導体自立基板の製造方法

清見和正, 藤井克司, 桜井規央, 小池佳代, 佐藤忠重, 手束英樹
特開2005-191286 窒化物半導体結晶成長用基体、窒化物半導体積層体、窒化物半導体自立基板及びそれらの製造方法

清見和正, 藤井克司, 桜井規央, 小池佳代, 佐藤忠重, 手束英樹
特開2005-191285 AlGaAs系化合物半導体層用エッチング液、エッチング方法および半導体基板

小池佳代, 望月多恵, 藤井克司

Social Activities

高校生向けエネルギー教育

Lecturer, Consultant, Planner