2007年
GaN系405nm半導体レーザーを用いた近接場光記録再生
レーザー研究
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- 巻
- 35
- 号
- 2
- 開始ページ
- 86
- 終了ページ
- 90
- 記述言語
- 日本語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.2184/lsj.35.2_86
- 出版者・発行元
- The Laser Society of Japan
Near-field recording/readout using a solid immersion lens (SIL) is capable of achieving a numerical aperture (NA) of greater than unity and a higher storage density than conventional optical disc systems. In near-field recording using a SIL, a material having a higher refractive index results in a smaller spot size, as does using a shorter wavelength light source. However, the conventionally used GaN 405-nm laser diode (LD) still has several advantages over shorter wavelength light sources; for example, it can achieve a higher recording density and it is possible to produce more reliable near-field recording/readout systems based on it. We describe a trial that seeks to achieve a higher data transfer rate using a 1.84-NA dual-channel near-field recording/readout system that employs a monolithic dual-beam blue LD.
- リンク情報
- ID情報
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- DOI : 10.2184/lsj.35.2_86
- ISSN : 0387-0200
- eISSN : 1349-6603
- CiNii Articles ID : 10018544504
- CiNii Books ID : AN00255326