論文

査読有り
2007年

GaN系405nm半導体レーザーを用いた近接場光記録再生

レーザー研究
  • 齊藤 公博
  • ,
  • 篠田 昌孝
  • ,
  • 石本 努
  • ,
  • 中沖 有克
  • ,
  • 山本 眞伸

35
2
開始ページ
86
終了ページ
90
記述言語
日本語
掲載種別
研究論文(学術雑誌)
DOI
10.2184/lsj.35.2_86
出版者・発行元
The Laser Society of Japan

Near-field recording/readout using a solid immersion lens (SIL) is capable of achieving a numerical aperture (NA) of greater than unity and a higher storage density than conventional optical disc systems. In near-field recording using a SIL, a material having a higher refractive index results in a smaller spot size, as does using a shorter wavelength light source. However, the conventionally used GaN 405-nm laser diode (LD) still has several advantages over shorter wavelength light sources; for example, it can achieve a higher recording density and it is possible to produce more reliable near-field recording/readout systems based on it. We describe a trial that seeks to achieve a higher data transfer rate using a 1.84-NA dual-channel near-field recording/readout system that employs a monolithic dual-beam blue LD.

リンク情報
DOI
https://doi.org/10.2184/lsj.35.2_86
CiNii Articles
http://ci.nii.ac.jp/naid/10018544504
CiNii Books
http://ci.nii.ac.jp/ncid/AN00255326
URL
https://www.jstage.jst.go.jp/article/lsj/35/2/35_86/_pdf
ID情報
  • DOI : 10.2184/lsj.35.2_86
  • ISSN : 0387-0200
  • eISSN : 1349-6603
  • CiNii Articles ID : 10018544504
  • CiNii Books ID : AN00255326

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