Apr 1, 2020
Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality
JAPANESE JOURNAL OF APPLIED PHYSICS
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- Volume
- 59
- Number
- SF
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.35848/1347-4065/ab6b79
- Publisher
- IOP PUBLISHING LTD
We report on the synthesis of Mg2Si thin films from a Mg-Si solution by thermal treatment of Mg on a Si substrate under an Ar gas atmosphere. The Mg was prepared by two methods. One is to deposit Mg films by thermal evaporation, and another is to simply place Mg ribbons on Si. After thermal treatment, a two-layer structure consisting of oxide and similar to 1 mu m-thick Mg2Si films with {100} preferential orientation was observed for the sample prepared by thermal evaporation. On the other hand, similar to 10 mu m-thick single layer Mg2Si with more random orientations and cracks was formed for the Mg ribbon contact samples. Possible mechanisms for different structures, crystal orientations, and crack formation are discussed. (c) 2020 The Japan Society of Applied Physics
- Link information
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- DOI
- https://doi.org/10.35848/1347-4065/ab6b79
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000520008100021&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85083330279&origin=inward
- ID information
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- DOI : 10.35848/1347-4065/ab6b79
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000520008100021