Papers

Peer-reviewed
Apr 1, 2020

Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Horiba Issei
  • ,
  • Fujiwara Michinobu
  • ,
  • Nakagawa Yoshihiko
  • ,
  • Gotoh Kazuhiro
  • ,
  • Kurokawa Yasuyoshi
  • ,
  • Itoh Takashi
  • ,
  • Usami Noritaka

Volume
59
Number
SF
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.35848/1347-4065/ab6b79
Publisher
IOP PUBLISHING LTD

We report on the synthesis of Mg2Si thin films from a Mg-Si solution by thermal treatment of Mg on a Si substrate under an Ar gas atmosphere. The Mg was prepared by two methods. One is to deposit Mg films by thermal evaporation, and another is to simply place Mg ribbons on Si. After thermal treatment, a two-layer structure consisting of oxide and similar to 1 mu m-thick Mg2Si films with {100} preferential orientation was observed for the sample prepared by thermal evaporation. On the other hand, similar to 10 mu m-thick single layer Mg2Si with more random orientations and cracks was formed for the Mg ribbon contact samples. Possible mechanisms for different structures, crystal orientations, and crack formation are discussed. (c) 2020 The Japan Society of Applied Physics

Link information
DOI
https://doi.org/10.35848/1347-4065/ab6b79
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000520008100021&DestApp=WOS_CPL
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85083330279&origin=inward
ID information
  • DOI : 10.35848/1347-4065/ab6b79
  • ISSN : 0021-4922
  • eISSN : 1347-4065
  • Web of Science ID : WOS:000520008100021

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