Heterojunction solar cells were fabricated with novel light trapping structure formed by selective etching using Ge dots as an etching mask. The light trapping structure has a lot of islands with submicron scale and nanoscale. Etching margin was less than 2 mu m. The light trapping structure was fabricated by changing the parameter of the Ge layer. As a result, the sample fabricated at the Ge coverage of 60 monolayers (MLs) had the largest island structure. The solar cell with the structure with Ge coverage of 60MLs showed high short-circuit current density of 39.7 mA/cm(2). This is because the novel light trapping structure consisted of submicron textures and nanoscale textures and enhanced the light absorption in a wide range.