2017年9月
Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells
JOURNAL OF CRYSTAL GROWTH
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- ,
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- 巻
- 473
- 号
- 開始ページ
- 55
- 終了ページ
- 59
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2017.05.025
- 出版者・発行元
- ELSEVIER SCIENCE BV
This paper presents intentional doping of n- and p-type GaAs0.19P0.76N0.05 alloys by molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium were respectively used as n- and p-type dopants. The carrier concentrations were controllable between 1017 and 1019 cm(-3) by adjusting the dopant cell temperature. It was revealed that Hall mobility of the n-type GaAsPN alloys was increased by the RTA process compared to as-grown ones, whereas no significant difference was apparent in the p-type alloys. It is believed that improvement of the conduction band spatial uniformity was mainly responsible for the Hall mobility increase of the n-type GaAsPN alloys by RTA. Finally, a p-i-n GaAsPN diode structure was grown on n-type GaP substrates. A current-voltage characteristic showed a typical rectifying curve with a built-in voltage of 1.8 V and an ideality factor of 1.45. The reverse saturation current was estimated to be less than 10 nA/cm(2). (C) 2017 Elsevier B.V. All rights reserved.
- リンク情報
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- DOI
- https://doi.org/10.1016/j.jcrysgro.2017.05.025
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000404500700008&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020050361&origin=inward
- ID情報
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- DOI : 10.1016/j.jcrysgro.2017.05.025
- ISSN : 0022-0248
- eISSN : 1873-5002
- SCOPUS ID : 85020050361
- Web of Science ID : WOS:000404500700008