2009年
Ultrasonic Study of Vacancy in Single Crystal Silicon at Low Temperatures
25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 4
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- 巻
- 150
- 号
- 開始ページ
- 042002_1
- 終了ページ
- 042002_4
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1088/1742-6596/150/4/042002
- 出版者・発行元
- IOP PUBLISHING LTD
We have performed ultrasonic measurements at low temperatures in order to investigate vacancy in single crystal silicon. The longitudinal elastic constants of non-doped and boron-doped silicon grown by a floating zone method exhibit appreciable softening with decreasing temperature down to 20 mK. The softening of boron-doped silicon is easily suppressed in applied magnetic field up to 2 T, while the softening of non-doped silicon is robust in fields even up to 16 T. The softening of elastic constants in high-purity crystalline silicon is certainly caused by the coupling of elastic strains of the ultrasonic waves to electric quadrupoles of the vacancy orbital.
- リンク情報
- ID情報
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- DOI : 10.1088/1742-6596/150/4/042002
- ISSN : 1742-6588
- Web of Science ID : WOS:000289891200002