Liu Xin (Xin Liu) - マイポータル

基本情報

所属: 名古屋大学大学院工学研究科物質プロセス工学専攻助教 (特任助教)

学位: 工学博士(2012年6月西安交通大学)
修士(2007年6月西安建筑科技大学)

連絡先: liuxin3272005gmail.com
通称等の別名: 劉しん
ORCID iD: https://orcid.org/0000-0003-0832-327X
J-GLOBAL ID: 202001015307064450
researchmap会員ID: R000003092

外部リンク: https://scholar.google.com/citations?user=aFZXiUwAAAAJ&hl=ja

経歴

2021年1月 - 現在

名古屋大学, 大学院工学研究科物質プロセス工学専攻, 助教 (特任助教)

論文

Analysis of the Effect of Cusp-Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model

Koichi Kakimoto, Xin Liu, Satoshi Nakano

Crystal Research and Technology 2021年
Numerical analysis of phosphorus concentration distribution in a silicon crystal during directional solidification process

Satoshi Nakano, Xin Liu, Xue-Feng Han, Koichi Kakimoto

Crystals 11(1) 1-10 2021年1月1日
Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

Xue-Feng Han, Xin Liu, Satoshi Nakano, Koichi Kakimoto

Journal of Crystal Growth 545 2020年9月1日
3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

CRYSTALS 10(2) 2020年2月査読有り
3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 532 2020年2月査読有り
Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 532 2020年2月査読有り
Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 532 2020年2月査読有り
In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Y. Miyamura, H. Harada, X. Liu, S. Nakano, S. Nishizawa, K. Kakimoto

Journal of Crystal Growth 507 154-156 2019年2月査読有り
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 499 8-12 2018年10月査読有り
3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY 53(5) 2018年5月査読有り
3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 483 269-274 2018年2月査読有り
Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 483 241-244 2018年2月査読有り
Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 474 3-7 2017年9月査読有り
Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Xin Liu, Satoshi Nakano, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 468 595-600 2017年6月査読有り
Development of carbon transport and modeling in Czochralski silicon crystal growth

Xin Liu, Satoshi Nakano, Koichi Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY 52(1) 2017年1月査読有り
Growth of semiconductor silicon crystals

Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 62(2) 273-285 2016年6月査読有り
Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto

CRYSTAL RESEARCH AND TECHNOLOGY 50(6) 458-463 2015年6月査読有り
Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

Xin Liu, Bing Gao, Koichi Kakimoto

JOURNAL OF CRYSTAL GROWTH 417 58-64 2015年5月査読有り
Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth

Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi

九州大学応用力学研究所所報 147 1-5 2014年9月
Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots

Zaoyang Li, Lijun Liu, Xin Liu, Yunfeng Zhang, Jingfeng Xiong

JOURNAL OF CRYSTAL GROWTH 385 9-15 2014年1月査読有り

もっとみる

MISC

Numerical Investigation of Carbon and Silicon Carbide Contamination during the Melting Process of Czochralski Silicon Crystal Growth

LIU Xin, GAO Bing, NAKANO Satoshi, KAKIMOTO Koichi

結晶成長国内会議予稿集(CD-ROM) 44th ROMBUNNO.06PS05 2014年11月6日
Effects of Argon Flow on Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth

LIU Xin, GAO Bing, NAKANO Satoshi, KAKIMOTO Koichi

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.18P-A25-5 2014年9月1日
Numerical Investigation of the Melting Process Including Carbon Contamination in a CZ-Si Crystal Growth

LIU Xin, GAO Bing, NAKANO Satoshi, KAKIMOTO Koichi

応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st ROMBUNNO.18A-D3-12 2014年3月3日
Prediction of Argon Flow and Impurity Transport in a CZ-Si Crystal Growth with Different Gas Flow Solvers

LIU Xin, GAO Bing, NAKANO Satoshi, KAKIMOTO Koichi

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 74th ROMBUNNO.16A-B3-1 2013年8月31日

Liu Xin

基本情報

経歴

論文

MISC

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