2006年11月1日
Thermal stability of platinum bottom electrode for bismuth titanate thin films
Integrated Ferroelectrics
- ,
- ,
- 巻
- 79
- 号
- 1
- 開始ページ
- 235
- 終了ページ
- 243
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1080/10584580600659894
Platinum (Pt) films were widely used as an electrode in device applications of ferroelectric thin films. However, the surface morphology and microstructure were deformed during ferroelectric layer preparation. In this study, consequently, thermal stability of Pt bottom electrode for ferroelectric bismuth titanate (Bi4Ti3O12) thin film fabrication was investigated. The deposited Pt film with thick Ti adhesion layer exhibits the different aspect areas, which contain Ti and/or Si element diffused into Pt grain boundaries. Therefore, the adhesion layer thickness was thinned as much as possible. Compressive stress was relaxed by hillock formation in plastic deformation region. Therefore, It is important to maintain the tensile stress from the substrate during the ferroelectric thin film formation. Bi4Ti3O12 thin films deposited on stabilized Pt bottom electrode, exhibit superior dielectric properties. The deposited film exhibited ferroelectric properties. The polarization value at zero field of the strongly c-axis oriented one was 1.75 uC/cm2 . We think that the choke of silicon and/or titanium elements, diffused into Pt electrode, were effective against suppress hillock formation.
- リンク情報
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- DOI
- https://doi.org/10.1080/10584580600659894
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000238615700029&DestApp=WOS_CPL
- 共同研究・競争的資金等の研究課題
- 非鉛系強誘電体薄膜の合成における触媒作用の解明
- 共同研究・競争的資金等の研究課題
- 複合酸化物薄膜の成長過程における触媒作用の解明
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745763263&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=33745763263&origin=inward
- ID情報
-
- DOI : 10.1080/10584580600659894
- ISSN : 1058-4587
- eISSN : 1607-8489
- SCOPUS ID : 33745763263
- Web of Science ID : WOS:000238615700029