カーン アジマル ムハマド

Dr. M. Ajmal Khan (Wazir), was born in the small village Doag, Wana, South Waziristan in 1975. He graduated from the prestigious Quaid-i-Azam University (QAU), Islamabad in 2001. In 2009, he moved to University of Tsukuba, Japan for his PhD studies and received his PhD degree in 2013 with distinction. In 2012, during his PhD work in Tsukuba University, he has discovered the thin film of boron (B) doped p-type BaSi₂ layer "p⁺" along with his PhD supervisor Prof. Takashi Suemasu. In 2013-2014, he was engaged as a Genral Manager (Tech) at ICs Semiconductor in Pakistan. From 2014 to 2016, he was appointed as a research scientist in the team of FUTUTER PV-Innovation, Japan Science and Technology Agency (JST) at FREA. In FREA, he worked on Si NWs, SiGe and a-Si/c-Si-based heterojunction solar cells. In 2016, he also worked as associate professor in National Institute of Technology, Fukushima College Iwaki. Later in 2017, he moved to the Prof. Hideki Hirayama's group at RAP/CPR Riken as a researcher. Since then, he has been doing research on the epitaxial growth, fabrication, characterization and device applications of group III nitride semiconductors (AlGaN, AlN and GaN) toward UV emitters. Recently he developed low-temperature deposited AlGaN buffer layers underneath the multi-quantum-wells (MQWs) for the growth of group III-nitride semiconductor films on a AlN templet on c-sapphire substrate, which led to the realization of a world record Efficiency of 9.6% in p-AlGaN UVB LED and Light output power of 40mW on bare-wafer was achieved. Recently AlGaN DUV laser with as high as 120 kA-cm^-2 current injection efficiency was also achieved. The injection current density of 51 kA-cm^-2 in the electrically pumped AlGaN-based UVC Laser at 273nm emission was successfully demonstrated and some electrically pumped multi-peaks lasing oscilaiton were reported. Furthermore, an AlGaN-based UVC MQWs Laser structure was successfully developed along with the Yamaguchi University (Prof. Y. Yamada Lab). The optical pumping results revealed that the stimulated emission with a world record threshold excitation power density of 26 kW-cm^-2 at room temperature was observed. In addition, lasing spectra with fine structures, were also observed, indicating excitonic lasing at room temperature.

E-mail: muhammad.khan@riken.jp
https://orcid.org/0000-0002-5171-6215
https://www.researchgate.net/profile/M_Ajmal_Khan

Specialties: Plasma Physics, Photovoltaics, people management, project management, strategy definition, Technology management for Renewable Energy, Nano-materials and Nanotechnology. UVB, UVC LEDs and LDs