Masahisa Fujino

Profile Information

Affiliation: National Institute of Advanced Industrial Science and Technology

Degree: 博士(工学)(東京大学)

ORCID ID: https://orcid.org/0000-0001-5281-846X
J-GLOBAL ID: 201601020411395663
researchmap Member ID: B000256987

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Research History

Oct, 2023 - Present

National Institute of Advanced Industrial Science and Technology
Apr, 2020 - Sep, 2023

National Institute of Advanced Industrial Science and Technology
Oct, 2017 - Mar, 2020

National Institute of Advanced Industrial Science and Technology
Dec, 2007 - Sep, 2017

The Graduate School of Engineering Department of Precision Engineering, The University of Tokyo
Oct, 2005 - Nov, 2007

Guest Researcher, Environmental Engineering Department, Fraunhofer Institute IZM

Papers

Interfacial analysis of bonded SiCn interfaces by neutron reflectometry

Masahisa Fujino, Kenji Takahashi, Katsuya Kikuchi, Tetsuya Ueda, Noboru Miyata, Tsukasa Miyazaki

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, 10, Oct 5, 2021
Low temperature de-oxidation for copper surface by catalyzed formic acid vapor

Pei Wen Chou, Jenn Ming Song, Zong Yu Xie, Masatake Akaike, Tadatomo Suga, Masahisa Fujino, Jing Yuan Lin

Applied Surface Science, 456 890-898, Oct 31, 2018 Peer-reviewed
Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer

Kai Takeuchi, Masahisa Fujino, Yoshiie Matsumoto, Tadatomo Suga

Japanese Journal of Applied Physics, 57(4), Apr, 2018 Peer-reviewed
Room temperature bonding and debonding of polyimide film and glass substrate based on surface activate bonding method

Kai Takeuchi, Masahisa Fujino, Yoshiie Matsumoto, Tadatomo Suga

Japanese Journal of Applied Physics, 57(2), Feb, 2018 Peer-reviewed
Bonding and transferring of carbon nanotube bumps using magnetron sputtering

Masahisa Fujino, Hidenori Terasaka, Tadatomo Suga

Japanese Journal of Applied Physics, 57(2), Feb, 2018 Peer-reviewed
Room temperature temporary bonding of glass substrates based on SAB method using si intermediate layer

Kai Takeuchi, Masahisa Fujino, Tadatomo Suga

IEEE Transactions on Components, Packaging and Manufacturing Technology, 7(10) 1713-1720, Oct, 2017 Peer-reviewed
Preparation of pine-like Cu-Ni-P coating and its application in 3D integration

Wenjing Zhang, Yinghui Wang, Tadatomo Suga, Hiromu Kawai, Michitaka Yamamoto, Eiji Higurashi, Masahisa Fujino, Ming Li

18th International Conference on Electronic Packaging Technology, ICEPT 2017, 54-58, Sep 19, 2017 Peer-reviewed
Cu/adhesive hybrid bonding through a Cu-first bonding approach by using H-containing HCOOH vapor surface treatment

Ran He, Masahisa Fujino, Masatake Akaike, Tadatomo Suga, Taiji Sakai, Seiki Sakuyama

18th International Conference on Electronic Packaging Technology, ICEPT 2017, 865-870, Sep 19, 2017 Peer-reviewed
SiC wafer bonding using surface activation method for power device

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi

18th International Conference on Electronic Packaging Technology, ICEPT 2017, 660-663, Sep 19, 2017 Peer-reviewed
GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off

Fengwen Mu, Yuki Morino, Kathleen Jerchel, Masahisa Fujino, Tadatomo Suga

APPLIED SURFACE SCIENCE, 416 1007-1012, Sep, 2017 Peer-reviewed
Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200 °C

Ran He, Masahisa Fujino, Masatake Akaike, Taiji Sakai, Seiki Sakuyama, Tadatomo Suga

Applied Surface Science, 414 163-170, Aug 31, 2017 Peer-reviewed
Cu/Adhesive Hybrid Bonding at 180 °c in H-Containing HCOOH Vapor Ambient for 2.5D/3D Integration

Ran He, Masahisa Fujino, Masatake Akaike, Taiji Sakai, Seiki Sakuyama, Tadatomo Suga

Proceedings - Electronic Components and Technology Conference, 1243-1248, Aug 1, 2017 Peer-reviewed
Room temperature SiC-SiC direct wafer bonding by SAB methods

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Tadatomo Suga

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, 3, Jun 13, 2017 Peer-reviewed
Room temperature bonding and debonding of PI film and glass substrate based on SAB method

K. Takeuchi, M. Fujino, Y. Matsumoto, T. Suga

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, 38, Jun 13, 2017 Peer-reviewed
Surface activated bonding of Si wafers at liquid nitrogen temperature

Yasuhisa Morishita, Masahisa Fujino, Tadatomo Suga

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, 67, Jun 13, 2017 Peer-reviewed
The effect of surface activation process for the GaAs device properties

Masahisa Fujino, Nobuto Managaki, Hiroshi Yamada, Tadatomo Suga

2017 International Conference on Electronics Packaging, ICEP 2017, 177-180, Jun 5, 2017 Peer-reviewed
Reduction reaction analysis of nanoparticle copper oxide for copper direct bonding using formic acid

Masahisa Fujino, Masatake Akaike, Naoya Matsuoka, Tadatomo Suga

Japanese Journal of Applied Physics, 56(4), Apr, 2017 Peer-reviewed
Room temperature SiC-SiO<inf>2</inf> wafer bonding enhanced by using an intermediate si nano layer

F. Mu, K. Iguchi, H. Nakazawa, Y. Takahashi, R. He, M. Fujino, T. Suga

ECS Journal of Solid State Science and Technology, 6(5) P227-P230, 2017 Peer-reviewed
Room Temperature Bonding with Polymethylglutarimide Using the Surface Activated Bonding Method for a Layer Transfer Platform

Matsumae, Takashi, Fujino, Masahisa, Suga, Tadatomo

Ecs Journal of Solid State Science and Technology, 6(8) P512-P516, 2017 Peer-reviewed
Interface properties of surface activated bonded CNT bumps and Au substrate

Masahisa Fujino, Tadatomo Suga

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 54-54, 2017 Peer-reviewed

Misc.

Low Temperature Bonding for 3D Integration FOREWORD

Naoteru Shigekawa, Hideki Takagi, Masahisa Fujino, Eiji Higurashi, Nobuhiko Nishiyama, Takehito Shimatsu, Noriaki Toyoda

JAPANESE JOURNAL OF APPLIED PHYSICS, 59, Feb, 2020
Cu/Dielectric Hybrid Bonding by Using Combined Surface Activated Bonding Method

26 299-302, Sep 8, 2016
Combined Surface-Activated Bonding (SAB) Technology for Low-Temperature Wafer Bonding for 3D Integration

25 321-324, Sep 3, 2015
Direct bonding of SiC by modified surface activated bonding method

24 175-178, Sep 4, 2014
Combined Surface-Activated Bonding Process for Novel Void-Free Hydrophilic Bonding Approach

24 271-274, Sep 4, 2014
Examination of sintering temperature conditions in sintering technology using Ag-Sn fine particles

24 267-270, Sep 4, 2014
多接合型太陽電池のためのGeとGaAsの表面活性化接合

KONO GENKI, FUJINO MASAHISA, YAMASHITA DAIJI, WATANABE KENTARO, SUGIYAMA MASAKAZU, NAKANO YOSHIAKI, SUGA TADATOMO

精密工学会大会学術講演会講演論文集, 2014 ROMBUNNO.E21, Mar 1, 2014
Directly bonded Ge/GaAs by surface activated bonding for high efficiency III-V multi-junction solar cells

Genki Kono, Masahisa Fujino, Daiji Yamashita, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Tadatomo Suga

Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, 50, Jan 1, 2014

Research Projects

原子層堆積ハイブリッド表面の局所ダイナミクスの解明と3Dヘテロデバイスへの応用

科学研究費助成事業, 基盤研究(B), 日本学術振興会, Apr, 2023 - Mar, 2026

井上史大, 藤野真久
Transferring Graphene to glass substrate using self-assembled monolayer and nano-adhesion layer

Grants-in-Aid for Scientific Research, Grant-in-Aid for Young Scientists (B), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017

Fujino Masahisaa
Development of Low Temperature Bonding Method by Formic Acid Treatment using Pt Catalyst

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017

Suga Tadatomo, FUJINO Masahisa, AKAIKW Masatake

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