Aug, 2011
High-power rf oscillation induced in half-metallic Co2MnSi layer by spin-transfer torque
APPLIED PHYSICS LETTERS
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- Volume
- 99
- Number
- 5
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1063/1.3624470
- Publisher
- AMER INST PHYSICS
The rf oscillation induced in a current-perpendicular-to-plane device with Co2MnSi (CMS) layers by spin-transfer torque was investigated to enhance the rf output power due to the large magnetoresistance (MR) ratio. A large MR ratio of 12.5% was obtained due to the large spin-polarization of CMS, and fundamental and second harmonic rf oscillations were clearly observed in the CMS layer. A high rf output power of 1.1 nW was achieved in spite of a small precession angle of 8.6 degrees. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624470]
- Link information
- ID information
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- DOI : 10.1063/1.3624470
- ISSN : 0003-6951
- Web of Science ID : WOS:000293617300050