In this work, geometric structures for diluted magnetic semiconductor (Ga,Cr)As films grown by low-temperature molecular beam epitaxy were investigated by fluorescence extended X-ray absorption fine structure (EXAFS) measurements. The XAFS analysis has revealed that the majority of Cr atoms in the (Ga,Cr)As film substitute the Ga atoms in the GaAs lattice up to the Cr content x = 0.145. The abrupt change of the Cr-As bond lengths was observed between Cr content x = 0.06 and 0.145, which is due to inhomogeneous distribution of Cr atoms in GaAs matrix. It is expected that the paramagnetic behavior at room temperature in the samples above x = 0.145 is due to the inhomogeneous distribution of the Cr atoms doped in the GaAs matrix. (c) 2006 Elsevier B.V. All rights reserved.