2004年5月
Room temperature magnetoresistance effect observed in Au/GaAs films processed by focused ion beam
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- ,
- ,
- 巻
- 272
- 号
- 開始ページ
- E1385
- 終了ページ
- E1386
- 記述言語
- 英語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.1016/j.jmmm.2003.12.285
- 出版者・発行元
- ELSEVIER SCIENCE BV
Huge magnetoresistance (MR) effect was observed in Au/GaAs films with a nano-size trench fabricated by a focused ion beam process. Positive MR effect with the ratio of 32,000% was obtained in the magnetic field of 15,000 Oe at room temperature. This huge MR effect is promising for the application to spintronic devices such as magnetic sensors. (C) 2003 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jmmm.2003.12.285
- ISSN : 0304-8853
- Web of Science ID : WOS:000202897200538