2000年2月
The effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(100) substrates
JOURNAL OF CRYSTAL GROWTH
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- 巻
- 209
- 号
- 2-3
- 開始ページ
- 561
- 終了ページ
- 565
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/S0022-0248(99)00620-X
- 出版者・発行元
- ELSEVIER SCIENCE BV
Ferromagnetic MnAs thin films were grown on clean, S- and Se-passivated GaAs(1 0 0) substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs substrates depend on the surface treatment. On the clean and the Se-passivated surfaces MnAs films grow by a layer-by-layer mode, whereas on the S-passivated surface MnAs films grow by an island growth mode, and as a result polycrystalline films are obtained. Photoelectron spectroscopy study revealed that the Se overlayer on the Se-passivated GaAs substrates prevented Ga interdiffusion. We also found that the saturation magnetization of MnAs films on the Se-passivated surface was slightly larger than that on the clean and the S-passivated surfaces. This difference can be explained by the role of Se overlayer in preventing interdiffusion between MnAs and GaAs. (C) 2000 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0022-0248(99)00620-X
- ISSN : 0022-0248
- Web of Science ID : WOS:000085228100068