2007年5月
Si-substrate modeling toward substrate-aware interconnect resistance and inductance extraction in SoC design
Proceedings - 10th IEEE Workshop on Signal Propagation on Interconnects, SPI 2006
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- 開始ページ
- 227
- 終了ページ
- 230
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1109/SPI.2006.289229
- 出版者・発行元
- IEEE
This paper proposes a simple yet sufficient Si-substrate modeling for interconnect resistance and inductance extraction. The proposed modeling expresses Si-substrate as four filaments in a filament-based extractor. Although the number of filaments is small, extracted loop inductances and resistances show accurate frequency dependence resulting from the proximity effect. We experimentally prove the accuracy using FEM (Finite Element Method) based simulations of electromagnetic fields. We also show a method to determine optimal size of the four filaments. The proposed model realizes substrate-aware extraction in SoC design flow.
- リンク情報
- ID情報
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- DOI : 10.1109/SPI.2006.289229
- J-Global ID : 201502881218134705
- Web of Science ID : WOS:000243998700050