論文

査読有り
2009年12月

Dispersibility in organic solvents of nanosized silica particles used in semiconductor package substrates

CHEMICAL ENGINEERING JOURNAL
  • Yoshihiro Nakamura
  • ,
  • Rieko Kobayashi
  • ,
  • Masayoshi Matsui
  • ,
  • Jun-ichi Ozaki

155
1-2
開始ページ
493
終了ページ
498
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.cej.2009.07.025
出版者・発行元
ELSEVIER SCIENCE SA

This study examined the influence of different types of silane coupling agents on the dispersion of nanosilica particles with diameters of ca. 10nm and 25nm in two organic solvents, methylisobutylketone (MIBK) and cyclohexanone (CXN). The nanosilicas were prepared by the sol-gel process, and the following coupling agents were used: 3-glycidylpropyltrimethoxysilane (EpoSi), N-phenyl-3-aminopropyltrimethoxysilane (AmiSi), 3-mercaptopropyltrimethoxysilane (MerSi), and alkyltrimethoxysilane (AlkSi). While the 25-nm silica particles displayed dispersibility similar to that of submicron silica particles (ca. 150 nm and 250 nm), the dispersibility of the 10-nm silica particles proved to be dependent on the combinations of the agents and solvents; for example, EpoSi and MerSi were found to be suitable agents for MIBK and CXN, respectively. The slurries were also subjected to heating at 40 degrees C for 24 h, which resulted in a considerably higher stability of the dispersion state when CXN was employed as the solvent, regardless of which silica coupling agents were used. FTIR measurement revealed the presence of unreacted free Si-OH at 3740cm(-1) for some nanosilicas. Combustion of the organic moieties introduced onto the silica surfaces also proved that the amount of organic groups present in a unit surface area of the nanosilicas were only 1/3 or 1/2 of that found on submicron silicas. From these observations, the low dispersibility of the nanosilicas was inferred to be due to the imperfect coverage of the silanol groups by the silane coupling agents. (C) 2009 Published by Elsevier B. V.

リンク情報
DOI
https://doi.org/10.1016/j.cej.2009.07.025
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000274769500063&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.cej.2009.07.025
  • ISSN : 1385-8947
  • eISSN : 1873-3212
  • Web of Science ID : WOS:000274769500063

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