2016年3月
Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 55
- 号
- 3
- 開始ページ
- 031301
- 終了ページ
- 5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.55.031301
- 出版者・発行元
- IOP PUBLISHING LTD
We simulated screw dislocations with the Burgers vector parallel to the [0001] direction in 4H-SiC by a classical molecular dynamics method. A stable structure of an extended dislocation generated by the dissociation of a screw dislocation was identified by calculating the strain energy caused by dislocation cores and stacking faults. As a result, we conclude that the most expected structure of the extended dislocation is made of partial dislocations with the Burgers vector b = 1/2c + 1/2c (c is equal to the thickness of one period in the c-axis direction of 4H-SiC) and the stacking fault that is parallel to the a-plane, and that the distance between the dislocation cores is less than about 44 angstrom. (C) 2016 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.55.031301
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000370491100012