2016年6月
High-Q mid-infrared thermal emitters operating with high power-utilization efficiency
OPTICS EXPRESS
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- ,
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- 巻
- 24
- 号
- 13
- 開始ページ
- 15101
- 終了ページ
- 15109
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1364/OE.24.015101
- 出版者・発行元
- OPTICAL SOC AMER
We demonstrate a single-mode high-Q (Q>100) mid-infrared thermal emitter operating with high power-utilization efficiency. The emitter consists of a rod-type photonic crystal (PC) slab interacting with GaAs/AlGaAs multiple quantum wells (MQWs), a GaAs substrate frame supporting the PC slab, and electric wires for Joule heating of the device. We carefully design the structure of the PC slab and the supporting frame/wires to minimize unwanted thermal losses and realize narrowband thermal emission having a peak intensity, under a given electrical input power, that is an order of magnitude higher than that of a reference blackbody emitter due to the efficient increase of the device temperature. (C) 2016 Optical Society of America
- リンク情報
- ID情報
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- DOI : 10.1364/OE.24.015101
- ISSN : 1094-4087
- Web of Science ID : WOS:000381759800128