論文

査読有り
2017年7月

Microcrystalline-Silicon Solar Cells With Photonic Crystals on the Top Surface

IEEE JOURNAL OF PHOTOVOLTAICS
  • Kenji Ishizaki
  • ,
  • Akito Motohira
  • ,
  • Menaka De Zoysa
  • ,
  • Yoshinori Tanaka
  • ,
  • Takami Umeda
  • ,
  • Susumu Noda

7
4
開始ページ
950
終了ページ
956
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/JPHOTOV.2017.2695524
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

We investigate microcrystalline-silicon (mu c-Si) solar cells with photonic crystals on the top surface, which exploit the large-area resonant effect in photonic crystals to enhance light absorption, for the first time. Guidelines for designing the surface photonic crystals are discussed, showing the importance of oblique leakage loss suppression. The influence of direct surface etching of the intrinsic mu c-Si layer (or photovoltaic layer) is studied, and it is shown that unbalanced etching of the amorphous and crystalline components of the mu c-Si layer deteriorates the electronic performance, in particular, the open-circuit voltage and fill factor. We then introduce photonic crystals under an adequate etching condition, and confirm that the light absorption (or the external quantum efficiency) is successfully enhanced by improving the incident light coupling to the resonant modes. Finally, we fabricate a few-micrometer-thick mu c-Si solar cell with a photonic crystal on the top surface and demonstrate an active-area efficiency of 11%, resulting from enhancement of the short-circuit current density, while simultaneously suppressing the deterioration of open-circuit voltage and fill factor. The obtained efficiency is the highest reported for a category of mu c-Si solar-cell in which all the n/i/p layers are composed of Si, excluding wide-gap materials such as silicon oxide.

リンク情報
DOI
https://doi.org/10.1109/JPHOTOV.2017.2695524
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000404258900001&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/JPHOTOV.2017.2695524
  • ISSN : 2156-3381
  • Web of Science ID : WOS:000404258900001

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