論文

2020年9月

AlGaN-based ultraviolet-B laser diode at 298 nm with threshold current density of 25 kA/cm2

2020 IEEE Photonics Conference, IPC 2020 - Proceedings
  • Kosuke Sato
  • Kazuki Yamada
  • Sayaka Ishizuka
  • Shinji Yasue
  • Shunya Tanaka
  • Tomoya Omori
  • Shohei Teramura
  • Yuya Ogino
  • Sho Iwayama
  • Hideto Miyake
  • Motoaki Iwaya
  • Tetsuya Takeuchi
  • Satoshi Kamiyama
  • Isamu Akasaki
    • … 全て表示
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研究論文（国際会議プロシーディングス）
DOI
10.1109/IPC47351.2020.9252390
Ultraviolet-B laser diode at 298 nm was realized by developing the technologies; growth method of lattice-relaxed Al0.6Ga0.4N layer on AlN/sapphire template and III-group composition-graded p-AlGaN cladding layer. The threshold current, current density and voltage were 5.0 A, 25 kA/cm2, and 34.4 V, respectively.
リンク情報
DOI
https://doi.org/10.1109/IPC47351.2020.9252390
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85097911843&origin=inward
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https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85097911843&origin=inward
ID情報
  • DOI : 10.1109/IPC47351.2020.9252390
  • SCOPUS ID : 85097911843
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