2019年6月
Single crystal growth of nitride and oxynitride phosphors using a gas-solid phase hybrid synthesis method
JAPANESE JOURNAL OF APPLIED PHYSICS
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 58
- 号
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/1347-4065/ab0c74
- 出版者・発行元
- IOP PUBLISHING LTD
The Al doped Sr2Si5N8:Eu2+ single crystal Sr2AlxSi5-xOxN8-x:Eu2+ (x approximate to 0.7) were grown by our original single crystal growth method and the precise crystal structure was investigated by single crystal X-ray diffraction analysis for the first time. O atoms are partially substituted for only N1 and N5 sites which are connected with the Si/Al atoms to compensate the "Pauling's second rule", which indicates the introduction of Al atoms for Si sites restricts the N sites that can be substituted by O atoms. The Sr2AlxSi5-xOxN8-x:Eu2+ (x approximate to 0.7) phosphors show the change of site selectivity of Eu for Sr sites, which causes the red-shifted emission spectrum of Sr2AlxSi5-xOxN8-x:Eu2+ (x approximate to 0.7) than that of Sr2Si5N8:Eu2+. (C) 2019 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/1347-4065/ab0c74
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000474928800009