論文

2021年8月1日

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

Applied Physics Express
  • Yusuke Matsukura
  • ,
  • Tetsuhiko Inazu
  • ,
  • Cyril Pernot
  • ,
  • Naoki Shibata
  • ,
  • Maki Kushimoto
  • ,
  • Manato Deki
  • ,
  • Yoshio Honda
  • ,
  • Hiroshi Amano

14
8
開始ページ
084004
終了ページ
084004
記述言語
掲載種別
研究論文(学術雑誌)
DOI
10.35848/1882-0786/ac154c
出版者・発行元
IOP Publishing

In this study, we investigated the relationship of light output power with the optical thickness of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high-Al-composition p-AlGaN clad layer, a thin p-GaN contact layer, and a reflective p-type electrode. By adjusting the thickness of the transparent high-Al-composition p-AlGaN clad layer, we observed a marked change in light output power. A maximum light output power of 385 mW at 1500 mA, a maximum external quantum efficiency of 15.7% at 10 mA, and a maximum wall-plug efficiency of 15.3% at 10 mA were obtained at an emission wavelength of 275 nm.

リンク情報
DOI
https://doi.org/10.35848/1882-0786/ac154c
URL
https://iopscience.iop.org/article/10.35848/1882-0786/ac154c
URL
https://iopscience.iop.org/article/10.35848/1882-0786/ac154c/pdf
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85112040293&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85112040293&origin=inward
ID情報
  • DOI : 10.35848/1882-0786/ac154c
  • ISSN : 1882-0778
  • eISSN : 1882-0786
  • SCOPUS ID : 85112040293

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