2021年8月1日
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
Applied Physics Express
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- 巻
- 14
- 号
- 8
- 開始ページ
- 084004
- 終了ページ
- 084004
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1882-0786/ac154c
- 出版者・発行元
- IOP Publishing
In this study, we investigated the relationship of light output power with the optical thickness of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high-Al-composition p-AlGaN clad layer, a thin p-GaN contact layer, and a reflective p-type electrode. By adjusting the thickness of the transparent high-Al-composition p-AlGaN clad layer, we observed a marked change in light output power. A maximum light output power of 385 mW at 1500 mA, a maximum external quantum efficiency of 15.7% at 10 mA, and a maximum wall-plug efficiency of 15.3% at 10 mA were obtained at an emission wavelength of 275 nm.
- リンク情報
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- DOI
- https://doi.org/10.35848/1882-0786/ac154c
- URL
- https://iopscience.iop.org/article/10.35848/1882-0786/ac154c
- URL
- https://iopscience.iop.org/article/10.35848/1882-0786/ac154c/pdf
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85112040293&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85112040293&origin=inward
- ID情報
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- DOI : 10.35848/1882-0786/ac154c
- ISSN : 1882-0778
- eISSN : 1882-0786
- SCOPUS ID : 85112040293