2013年8月
Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 52
- 号
- 8
- 開始ページ
- 088001.1-088001.3
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.52.088001
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
We have shown that UV-light irradiation during plasma process anomalously enhances in-diffusion of the defects deactivating the Si donor in n-GaN. The region where the donor was deactivated by the plasma-induced defects became several times deeper upon the superimposed UV-light irradiation than that in the sample just exposed to plasma emission. It was also found that external light with the below-band-gap energy did not affect the defect in-diffusion, and hence we can suggest that the electron-hole pair generation is essential for the enhancement of defect in-diffusion. (C) 2013 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.52.088001
- ISSN : 0021-4922
- J-Global ID : 201302282231405798
- Web of Science ID : WOS:000322454500031