Electronic properties of the HF-treated Si surfaces have been characterized by the Kelvin method combined with surface photovoltage (SPV) measurements. With the use of 340 nm ultraviolet light source, a relatively large SPV of -0.45 V was detected at a photocurrent density of 1 mA/cm(2) for the diluted (e.g. 4.5%) HF-treated p-Si(0 0 1) surface. On the other hand, no SPV was induced for the HF-treated n-Si(0 0 1) wafer. This result indicates that there is anomalously large surface band-bending toward the surface, and Fermi-level position at the surface is pinned in the vicinity of the bottom of the conduction band at the HF-treated p-Si(1 0 0). It is considered that the residual fluorine responsible for an anomalously large band-bending at the p-Si(1 0 0) surface treated with HE. Furthermore, the value of the built-in potential for the HF-treated p-Si(0 0 1) surface was estimated to be about 0.60 eV at the room temperature from the result of the temperature dependence of the effective saturation current. (C) 2003 Elsevier Science B.V. All rights reserved.