論文

査読有り
2016年7月

A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

JOURNAL OF LOW TEMPERATURE PHYSICS
  • Koichi Nagase
  • ,
  • Takehiko Wada
  • ,
  • Hirokazu Ikeda
  • ,
  • Yasuo Arai
  • ,
  • Morifumi Ohno
  • ,
  • Misaki Hanaoka
  • ,
  • Hidehiro Kanada
  • ,
  • Shinki Oyabu
  • ,
  • Yasuki Hattori
  • ,
  • Sota Ukai
  • ,
  • Toyoaki Suzuki
  • ,
  • Kentaroh Watanabe
  • ,
  • Shunsuke Baba
  • ,
  • Chihiro Kochi
  • ,
  • Keita Yamamoto

184
1-2
開始ページ
449
終了ページ
453
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1007/s10909-016-1551-7
出版者・発行元
SPRINGER/PLENUM PUBLISHERS

We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to 200 m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

Web of Science ® 被引用回数 : 1

リンク情報
DOI
https://doi.org/10.1007/s10909-016-1551-7
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000378689800070&DestApp=WOS_CPL
ID情報
  • DOI : 10.1007/s10909-016-1551-7
  • ISSN : 0022-2291
  • eISSN : 1573-7357
  • Web of Science ID : WOS:000378689800070

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