Masao Nagase

J-GLOBAL         Last updated: Oct 28, 2019 at 19:59
 
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Name
Masao Nagase
Affiliation
The University of Tokushima

Academic & Professional Experience

 
Apr 2010
   
 
Professor at the University of Tokushima.
 
Jan 1999
   
 
日本電信電話(株)NTT物性科学基礎研究所
 
Jul 1996
   
 
日本電信電話(株)基礎研究所
 
Jul 1987
   
 
日本電信電話(株)LSI研究所
 
Apr 1984
   
 
日本電信電話公社 厚木電気通信研究所 入所
 

Education

 
Mar 1997
   
 
Dr. Eng. (Waseda University)
 
Mar 1984
   
 
早稲田大学大学院 理工学研究科 物理学及応用物理学専攻 修了
 
Mar 1982
   
 
Graduated from Waseda University.
 

Awards & Honors

 
Mar 2017
SiC上グラフェンのシート抵抗の湿度依存性, 第8回集積化MEMSシンポジウム優秀ポスター賞, (社)応用物理学会 集積化MEMS技術研究会
Winner: Makoto Kitaoka, Yasuhide Ohno, Masao Nagase
 
Feb 2017
グラフェンの研究, 康楽賞, 公益財団法人 康楽会
 
Oct 2014
高品質グラフェン作製技術の研究, 第14回エンジニアリングフェスティバル 優秀賞, 徳島大学大学院ソシオテクノサイエンス研究部
 
Oct 2013
高品質単結晶グラフェン作製技術の研究, 第13回エンジニアリングフェスティバル 優秀賞, 徳島大学大学院ソシオテクノサイエンス研究部
 
Mar 2011
エピタキシャルグラフェンの成長と評価, 所長表彰 業績賞, 日本電信電話(株)NTT物性科学基礎研究所
Winner: Hiroki Hibino, Hiroyuki Kageshima, Shinichi Tanabe, Masao Nagase
 
Mar 2010
''Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons", Phys. Rev. B 77, 075413 (2008)., 所長表彰 論文賞, 日本電信電話(株)NTT物性科学基礎研究所
Winner: Hiroki Hibino, Hiroyuki Kageshima, Masao Nagase, Hiroshi Yamaguchi
 
Nov 2009
Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy, MNC 2008 Award for Outstanding Paper, 22nd International Microprocesses and Nanotechnology Conference
Winner: Kojiro Tamaru, Keiichiro Nonaka, Masao Nagase, Hiroshi Yamaguchi, Shinichi Warisawa, Sunao Ishihara
 
Nov 2007
"Prevention of Release-related Sticking in MEMS Devices by Electrodeposition of Water-repellent Film", T. Sakata, K. Kuwabara, T. Shimamura, N. Sato, N. Shimoyama, M. Nagase, K. Kudou, K. Machida, and H. Ishii, MNC 2006 Paper Award (Most Impressive Presentation), 20nd International Microprocesses and Nanotechnology Conference
 
Dec 1995
室温動作Si単電子トランジスタの実現, 研究開発本部長表彰 研究開発賞, 日本電信電話(株)
Winner: 庸夫 高橋, Masao Nagase
 
Dec 1989
所内技術交流に貢献したワークショップ活動, 所長表彰 特別賞, 日本電信電話(株)LSI研究所
 

Published Papers

 
Takaya Kujime, Yoshiaki Taniguchi, Daiu Akiyama, Yusuke Kawamura, Yasushi Kanai, Kazuhiko Matsumoto, Yasuhide Ohno, Masao Nagase
Physica Status Solidi (B) Basic Research      Jan 2019
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The effects of strong-acid treatment on an epitaxial graphene film on a SiC substrate are investigated to confirm its stability and compatibility with conventional semiconductor device fabricatio...
Yoshiaki Taniguchi, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Mikito Yasuzawa
Japanese Journal of Applied Physics   58    Jan 2019
© 2019 The Japan Society of Applied Physics. Fine chemical changes were electrically detected by functionalized epitaxial graphene field-effect transistors (GFET) on SiC substrates, which were expected to have the intrinsic sensing characteristics...
Jiyao Du, Yukinobu Kimura, Masaaki Tahara, Kazushi Matsui, Hitoshi Teratani, Yasuhide Ohno, Masao Nagase
Japanese Journal of Applied Physics   58    Jan 2019
© 2019 The Japan Society of Applied Physics. We report a vertically stacked graphene tunnel junction with an atomically thin insulating layer for novel function devices. The insulating water layer sandwiched between graphene samples as a tunnel ba...
Yoshiaki Taniguchi, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa, Mikito Yasuzawa
Japanese Journal of Applied Physics   58    Jan 2019
© 2019 The Japan Society of Applied Physics. In this study, we examined phosphorylcholine (ChoP)-modified epitaxial graphene film based devices for the suppression of non-specific protein adsorptions onto a graphene surface. ChoP-pyrene derivative...
Mitsuno Takanori, Taniguchi Yoshiaki, Ohno Yasuhide, Nagase Masao
APPLIED PHYSICS LETTERS   111(21)    Nov 2017   [Refereed]
Masao Nagase
Journal of Japan Institute of Electronics Packaging   20 382-386   Sep 2017
Kitaoka Makoto, Nagahama Takuya, Nakamura Kota, Aritsuki Takuya, Takashima Kazuya, Ohno Yasuhide, Nagase Masao
JAPANESE JOURNAL OF APPLIED PHYSICS   56(8)    Aug 2017   [Refereed]
Taniguchi Yoshiaki, Miki Tsubasa, Mitsuno Takanori, Ohno Yasuhide, Nagase Masao, Minagawa Keiji, Yasuzawa Mikito
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   254(2)    Feb 2017   [Refereed]
Nishiguchi Katsuhiko, Yoshizumi Daisuke, Sekine Yoshiaki, Furukawa Kazuaki, Fujiwara Akira, Nagase Masao
APPLIED PHYSICS EXPRESS   9(10)    Oct 2016   [Refereed]
Aritsuki Takuya, Nakashima Takeshi, Kobayashi Keisuke, Ohno Yasuhide, Nagase Masao
JAPANESE JOURNAL OF APPLIED PHYSICS   55(6)    Jun 2016   [Refereed]
Ohno Yasuhide, Kanai Yasushi, Mori Yuki, Nagase Masao, Matsumoto Kazuhiko
JAPANESE JOURNAL OF APPLIED PHYSICS   55(6)    Jun 2016   [Refereed]
Matsumura Hisatomo, Yanagiya Shin-ichiro, Nagase Masao, Kishikawa Hiroki, Goto Nobuo
JAPANESE JOURNAL OF APPLIED PHYSICS   55(6)    Jun 2016   [Refereed]
Nagase Masao, Akita Seiji, Ishikawa Yasuaki, Kometani Reo, Kondo Daiyu, Nagahara Seiji, Namazu Takahiro, Ohno Takeo, Shingubara Shozo, Takami Seiichi, Takase Koichi, Tanemura Masaaki, Tawa Keiko, Terabe Kazuya, Tsuchiya Toshiyuki, Yanagida Takeshi, Yokoo Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   55(6)    Jun 2016   [Refereed]
Ryong-Sok O., Takamura Makoto, Furukawa Kazuaki, Nagase Masao, Hibino Hiroki
JAPANESE JOURNAL OF APPLIED PHYSICS   54(3)    Mar 2015   [Refereed]
Kobayashi Keisuke, Tanabe Shinichi, Tao Takuto, Okumura Toshio, Nakashima Takeshi, Aritsuki Takuya, Ryong-Sok O., Nagase Masao
APPLIED PHYSICS EXPRESS   8(3)    Mar 2015   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Yamaguchi Hiroshi, Nagase Masao
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   778-780 1150-+   2014   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Yamaguchi Hiroshi, Nagase Masao
PHYSICAL REVIEW B   88(23)    Dec 2013   [Refereed]
Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akazaki, Hiroyuki Kageshima, Masao Nagase, Ken Ichi Sasaki, Hiroshi Yamaguchi
NTT Technical Review   11    Aug 2013
Raman scattering spectroscopy is a well-known optical tool for identifying the properties of graphene such as the number of layers, carrier concentration, and strain. Interaction between incident light and a metallic nanoparticle such as gold or s...
Yoshiaki Sekine, Hiroki Hibino, Katsuya OGURI, Tatsushi AKAZAKI, Hiroyuki Kageshima, Masao Nagase, Kenichi SASAKI, Hiroshi Yamaguchi
NTT技術ジャーナル   Vol.25(No.6) 22-26   Jun 2013   [Invited]
Nagase Masao, Hibino Hiroki, Kageshima Hiroyuki, Yamaguchi Hiroshi
APPLIED PHYSICS EXPRESS   6(5)    May 2013   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Yamaguchi Hiroshi, Nagase Masao
PHYSICS OF SEMICONDUCTORS   1566 173-+   2013   [Refereed]
Sakata Tomomi, Ishii Hiromu, Nagase Masao, Takagahara Kazuhiko, Kuwabara Kei, Ono Kazuyoshi, Sato Norio, Machida Katsuyuki
JAPANESE JOURNAL OF APPLIED PHYSICS   51(6)    Jun 2012   [Refereed]
Ryong-Sok O., Iwamoto Atsushi, Nishi Yuki, Funase Yuya, Yuasa Takahiro, Tomita Takuro, Nagase Masao, Hibino Hiroki, Yamaguchi Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS   51(6)    Jun 2012   [Refereed]
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, H. Yamaguchi
AIP Conference Proceedings   1399 755-756   Dec 2011
Atomic structures and electronic properties of graphene islands on SiC(0001) surfaces are theoretically studied. Two kinds of atomic structures embedded in the SiC surface are proposed. It is also revealed that the graphene zigzag ribbons with tho...
Y. Ono, Y. Miyazaki, Y. Miyazaki, S. Yabuuchi, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta
Thin Solid Films   519 8505-8508   Oct 2011
Magnetic properties of manganese (Mn) nanosilicide embedded in thin silicon-on-insulator (SOI) layers are investigated. Mn nanosilicide formed by Mn+ion implantation into a thin SOI layer followed by a thermal annealing at 600-900 °C shows soft fe...
Tanabe Shinichi, Sekine Yoshiaki, Kageshima Hiroyuki, Nagase Masao, Hibino Hiroki
PHYSICAL REVIEW B   84(11)    Sep 2011   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Yamaguchi Hiroshi, Nagase Masao
JAPANESE JOURNAL OF APPLIED PHYSICS   50(9)    Sep 2011   [Refereed]
Takeuchi Teruaki, Tatsumura Kosuke, Ohdomari Iwao, Shimura Takayoshi, Nagase Masao
PHYSICA B-CONDENSED MATTER   406(13) 2559-2564   Jul 2011   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Nagase Masao, Sekine Yoshiaki, Yamaguchi Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS   50(7)    Jul 2011   [Refereed]
Tanabe Shinichi, Sekine Yoshiaki, Kageshima Hiroyuki, Nagase Masao, Hibino Hiroki
JAPANESE JOURNAL OF APPLIED PHYSICS   50(4)    Apr 2011   [Refereed]
K. Takashina, K. Takashina, M. Nagase, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T. Fujisawa, T. Fujisawa, K. Muraki
Semiconductor Science and Technology   25    Dec 2010
A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements...
SiC 上エピタキシャルグラフェンの成長と評価
Hiroki Hibino, Hiroyuki Kageshima, 田邉 真一, Masao Nagase, 水野 清義
固体物理   Vol.45 645-655   Nov 2010   [Invited]
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Hiroshi Yamaguchi
Journal of the Japanese Association for Crystal Growth   Vol.37 190-195   Oct 2010   [Invited]
Epitaxial graphene growth on SiC (0001) is studied with the first-principles calculation. The growth process is modeled by the C aggregation on the terrace, and the energetics is studied. Adsorbed C atoms prefer to form sp^2 bonds, and make C-C bo...
H. Hibino, H. Kageshima, M. Nagase
Journal of Physics D: Applied Physics   43    Sep 2010
We review our research towards single-crystal growth of epitaxial few-layer graphene (FLG) on SiC substrates. We have established a method for evaluating the number of graphene layers microscopically using low-energy electron microscopy. Scanning ...
Masao Nagase, Kojiro Tamaru, Keiichiro Nonaka, Shin'ichi Warisawa, Sunao Ishihara, Hiroshi Yamaguchi
NTT Technical Review   8    Aug 2010
A method for evaluating the mechanical properties of microresonators and nanoresonators with high spatial resolution is described. Mechanical vibration is directly induced into a circular resonator by voltage applied from a conductive microprobe, ...
Hiroki Hibino, Hiroyuki Kageshima, Masao Nagase
NTT Technical Review   8    Aug 2010
With the aim of developing a single-crystal graphene substrate, which is indispensable for practical applications of graphene, we are experimentally and theoretically investigating the structural and physical properties of graphene grown on silico...
Hiroki HIBINO, Hiroyuki KAGESHIMA, Masao Nagase
NTT技術ジャーナル   Vol.22(No.6) 18-21   Jun 2010   [Invited]
Hiroki HIBINO, Hiroyuki KAGESHIMA, Masao Nagase
Journal of the Vacuum Society of Japan   Vol.53(No.2) 101-108   Feb 2010   [Invited]
We review our research toward single-crystal growth of epitaxial few-layer graphene (FLG) on SiC substrates, in which surface electron microscopy techniques have played essential roles. We have established a method for evaluating the number of gra...
Nagase Masao, Hibino Hiroki, Kageshima Hiroyuki, Yamaguchi Hiroshi
APPLIED PHYSICS EXPRESS   3(4)    2010   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Nagase Masao
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2   645-648 597-602   2010   [Refereed]
Tanabe Shinichi, Sekine Yoshiaki, Kageshima Hiroyuki, Nagase Masao, Hibino Hiroki
APPLIED PHYSICS EXPRESS   3(7)    2010   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Nagase Masao, Sekine Yoshiaki, Yamaguchi Hiroshi
APPLIED PHYSICS EXPRESS   3(11)    2010   [Refereed]
H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, H. Yamaguchi
Physical Review B - Condensed Matter and Materials Physics   80    Aug 2009
We used low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) to investigate domain structures of epitaxial few-layer graphene grown on SiC(0001). Dark-field (DF) LEEM images formed using (10) and (01) beams clearly indicat...
Nonaka Keiichiro, Tamaru Kojiro, Nagase Masao, Yamaguchi Hiroshi, Warisawa Shin'ichi, Ishihara Sunao
JAPANESE JOURNAL OF APPLIED PHYSICS   48(6)    Jun 2009   [Refereed]
Tamaru Kojiro, Nonaka Keiichiro, Nagase Masao, Yamaguchi Hiroshi, Warisawa Shin'ichi, Ishihara Sunao
JAPANESE JOURNAL OF APPLIED PHYSICS   48(6)    Jun 2009   [Refereed]
Kageshima Hiroyuki, Hibino Hiroki, Nagase Masao, Yamaguchi Hiroshi
APPLIED PHYSICS EXPRESS   2(6)    Jun 2009   [Refereed]
M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
Nanotechnology   19    Dec 2008
The in-plane conductance of individual graphene nanoislands thermally grown on SiC substrate was successfully measured using an integrated nanogap probe without lithographic patterning. A Pt nanogap electrode with a 30 nm gap integrated on the can...
Yabuuchi Shin, Kageshima Hiroyuki, Ono Yukinori, Nagase Masao, Fujiwara Akira, Ohta Eiji
PHYSICAL REVIEW B   78(4)    Jul 2008   [Refereed]
Nonaka Keiichiro, Tamaru Kojiro, Nagase Masao, Yamaguchi Hiroshi, Warisawa Shin'ichi, Ishihara Sunao
JAPANESE JOURNAL OF APPLIED PHYSICS   47(6) 5116-5119   Jun 2008   [Refereed]
Yabuuchi Shin, Ono Yukinori, Nagase Masao, Kageshima Hiroyuki, Fujiwara Akira, Ohta Eiji
JAPANESE JOURNAL OF APPLIED PHYSICS   47(6) 4487-4490   Jun 2008   [Refereed]
Nishiguchi Katsuhiko, Nagase Masao, Yamaguchi Toru, Fujiwara Akira, Yamaguchi Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS   47(6) 5106-5108   Jun 2008   [Refereed]
H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, Y. Kobayashi, H. Yamaguchi
e-Journal of Surface Science and Nanotechnology   6 107-110   Apr 2008
Low-energy electron microscopy (LEEM) has been used to measure reflectivity of low-energy electrons for graphene layers grown on Si-terminated 6H-SiC(0001) and 4H-SiC(0001) substrates and G-terminated 4H-SiC(0001̄) substrates. We observe quantized...
M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
Journal of Physics: Conference Series   100    Mar 2008
We report the first measurement of spatially resolved in-plane conductance of few-layer (one- or two-layer) graphene grown on a SiC substrate, measured using an integrated nanogap probe. The morphology and number of layers of the thermally grown g...
H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, H. Yamaguchi
Physical Review B - Condensed Matter and Materials Physics   77    Feb 2008
Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized SiC(0001). The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite thickness. Cond...
Sakata Tomomi, Kuwabara Kei, Shimamura Toshishige, Sato Norio, Nagase Masao, Shimoyama Nobuhiro, Kudou Kazuhisa, Machida Katsuyuki, Ishii Hiromu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46(9B) 6454-6457   Sep 2007   [Refereed]
Nagase Masao, Yamaguchi Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46(8B) 5639-5642   Aug 2007   [Refereed]
M. Nagase, H. Yamaguchi
Journal of Physics: Conference Series   61 856-860   Apr 2007
We developed a new nanotool of scanning probe microscopy (SPM) for local conductance measurement. Two Pt electrodes with a nanogap fabricated by focused ion beam (FIB) milling are integrated on a Si cantilever with Al electrodes. The minimum gap f...
Goto Touichiro, Inokawa Hiroshi, Nagase Masao, Ono Yukinori, Sumitomo Koji, Torimitsu Keiichi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46(4A) 1731-1733   Apr 2007   [Refereed]
Inokawa Hiroshi, Nagase Masao, Hirono Shigeru, Goto Touichiro, Yamaguchi Hiroshi, Torimitsu Keiichi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46(4B) 2615-2617   Apr 2007   [Refereed]
Kenichiro Nakamatsu,Masao Nagase,Toshinari Ichihashi,Kazuhiro Kanda,Yuichi Haruyama,Takashi Kaito,Shinji Matsui
IEICE Transactions   90-C(1) 41-45   Jan 2007   [Refereed]
Tomomi Sakata, Yuichi Okabe, Masao Nagase, Kazuhisa Kudou, Katsuyuki Machida, Hiromu Ishii, Norio Sato, Toshikazu Kamei, Masaki Yano
IEEJ Transactions on Sensors and Micromachines   126 14-18   Oct 2006
This paper describes the electrodeposition characteristics of an organic insulator film on a gold surface. In the electrodeposition, there are two reaction patterns depending on the solution temperature. Below around 30°C, the film thickness satur...
Masao Nagase
NTT Technical Review   4 48-52   Sep 2006
Nanotools for measuring the microscopic electronic properties of conductive materials have been developed. Nanoprobes were integrated on microcantilevers for scanning probe microscopy using nanofabrication technologies. The four-point nanoprobe en...
K. Nakamatsu, K. Nakamatsu, J. Igaki, J. Igaki, M. Nagase, T. Ichihashi, S. Matsui, S. Matsui
Microelectronic Engineering   83 808-810   Apr 2006
Tungsten-containing carbon (WC) nanosprings fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) using a source gas mixture of phenanthrene (C14H10) and tungsten hexacarbonyl (W(CO)6) showed unique characteristics they could expand a...
Masao Nagase, Kenichiro Nakamatsu, Kenichiro Nakamatsu, Shinji Matsui, Shinji Matsui, Hideo Namatsu, Hiroshi Yamaguchi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 2009-2013   Mar 2006
A newly developed scanning probe microscopy system with multiple probes has been applied to measurements of local electrical properties of semiconductor films. Carbon multiprobes fabricated by focused ion beam deposition on a Si cantilever were us...
Ken Ichiro Nakamatsu, Ken Ichiro Nakamatsu, Masao Nagase, Jun Ya Igaki, Jun Ya Igaki, Hideo Namatsu, Shinji Matsui, Shinji Matsui
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   23 2801-2805   Nov 2005
Our investigation of diamondlike-carbon (DLC) nanosprings with a 130-nm spring section diameter, which were fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD), showed for the first time that nanosprings can be stretched. We observe...
Ken Ichiro Nakamatsu, Ken Ichiro Nakamatsu, Masao Nagase, Hideo Namatsu, Shinji Matsui, Shinji Matsui
Japanese Journal of Applied Physics, Part 2: Letters   44    Sep 2005
Our investigation of diamond-like-carbon (DLC) nanosprings with a 130-nm spring section diameter, which were fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD), showed for the first time that nanosprings can be stretched. We observ...
Tomomi Sakata, Hiromu Ishii, Yuichi Okabe, Masao Nagase, Toshikazu Kamei, Kazuhisa Kudou, Masaki Yano, Katsuyuki Machida
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 5732-5735   Jul 2005
In microelectromechanical-system (MEMS) structures, selective encapsulation with an organic dielectric using electrodeposition can prevent sticking. Selective electrodeposition characteristics were investigated on a gold surface using sulfonium ca...
Masao Nagase, Kenichiro Nakamatsu, Kenichiro Nakamatsu, Shinji Matsui, Shinji Matsui, Hideo Namatsu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 5409-5412   Jul 2005
A new multiprobe system for scanning probe microscopy for electrical property measurements has been developed. Four carbon probes with nanosprings have been grown using focused-ion-beam chemical vapor deposition (FIB-CVD) on a Si cantilever with A...
Yusuke Ohminami, Shushi Suzuki, Nobuaki Matsudaira, Tomoko Nomura, Wang Jae Chun, Wang Jae Chun, Kaoru Ijima, Motonori Nakamura, Koichi Mukasa, Masao Nagase, Kiyotaka Asakura
Bulletin of the Chemical Society of Japan   78 435-442   Mar 2005
We have prepared microfabricated α-Sb2O4thin films on VSbO2by electron lithography. The VSbO4thin films were prepared on a Si substrate by a sol-gel method combined with a spin coating. The size, separation and arrangement of the α-Sb2O4overlayer ...
Takayoshi Shimura, Kiyoshi Yasutake, Masataka Umeno, Masao Nagase
Applied Physics Letters   86 1-3   Feb 2005
We demonstrate x-ray diffraction measurements of internal strain in Si nanowires that were fabricated using a self-limiting oxidation process. Rod-shaped scattering around the 111 Bragg point due to interference effects from the Si nanowires were ...
Masao Nagase, Hideo Namatsu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 4624-4628   Jul 2004
We propose a new method for assembling nano-electromechanical devices using focused ion beam. (FIB) technology. After milling the area surrounding a device (30 μm × 10 μm), a small chip containing nano-four-point probes with 60-nm-pitch Si electro...
M. Uematsu, H. Kageshima, K. Shiraishi, M. Nagase, S. Horiguchi, Y. Takahashi
Solid-State Electronics   48 1073-1078   Jun 2004
Pattern-dependent oxidation (PADOX) of silicon nanostructures fabricated on silicon-on-insulator (SOI) substrates is simulated. In order to reproduce the characteristic features of PADOX in the simulation, the volume expansion due to silicon oxida...
Yoshikazu Homma, Satoru Suzuki, Yoshihiro Kobayashi, Masao Nagase, Daisuke Takagi
Applied Physics Letters   84 1750-1752   Mar 2004
A mechanism for single-walled carbon nanotubes (SWNT) image formation on the insulator surface was discussed. Scanning electron microscopy (SEM) was employed to observe the highly bright images of the insulator surface produced by individual SWNT....
M. Nagase, S. Horiguchi, K. Shiraishi, K. Shiraishi, A. Fujiwara, Y. Takahashi
Journal of Electroanalytical Chemistry   559 19-23   Nov 2003
The embedded Si structure formed by pattern-dependent oxidation (PADOX) in single-electron transistors (SET) is observed by two microscopic methods, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The top view of the...
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   21 2869-2873   Nov 2003
The effect of oxidation temperature on the electrical characteristics of silicon (Si)-single electron transistor (SET) was analyzed. The SETs were fabricated with precise dimensions by electron-beam nanolithography. The SETs fabricated using a low...
Masao Nagase, Hiroshi Takahashi, Yoshiharu Shirakawabe, Hideo Namatsu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 4856-4860   Jul 2003
We have developed a new cantilever system for scanning probe microscopy. The microcantilever system designed for electrical resistivity measurements of nanomaterials has 16 electrodes and dual cantilevers. One cantilever with four additional elect...
Toru Yamaguchi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 3755-3762   Jun 2003
Line-edge roughness (LER) is a serious problem that we encounter in nanolithography as pattern sizes shrink. Two critical issues concerning the LER of resist patterns are its characterization and its origin. In this study, characterization involve...
Akira Fujiwara, Seiji Horiguchi, Masao Nagase, Yasuo Takahashi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 2429-2433   Apr 2003
We experimentally evaluate threshold voltages of Si single-electron transistors (SET) in order to investigate the effect of offset charges. Threshold voltages show a clear relation to the gate capacitance of SETs. which is a device parameter refle...
Masao Nagase, Seiji Horiguchi, Akira Fujiwara, Yasuo Takahashi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 2438-2443   Apr 2003
The three dimensional shapes and sizes of the embedded Si nanostructures in Si single-electron transistors (SETs) are observed by using microscopic methods, scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electr...
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   21 1-5   Jan 2003
Single-electron transistors (SETs) with precise dimensions were fabricated by e-beam nanolithography in combination with hydrogen silsesquioxane (HSQ) resist, which provides both high resolution and a small line-edge roughness. Measurement of the ...
Masao Nagase, Akira Fujiwara, Kenji Kurihara, Hideo Namatsu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 318-325   Jan 2003
A novel scanning electron microscopy for the imaging of embedded nanostructures is proposed. The Si nanostructures embedded in SiO2are clearly observed as bright contrasts at 30 kV electrons in the secondary electron mode. It is confirmed that the...
Kenichi Kanzaki, Toru Yamaguchi, Masao Nagase, Kenji Yamazaki, Hideo Namatsu
Japanese Journal of Applied Physics, Part 2: Letters   41    Nov 2002
The thickness dependence of the roughness of ultrathin (≤ 100 nm) electron-beam resist (ZEP520) was investigated using an atomic force microscope (AFM). The roughness (linewidth fluctuations of line patterns) increased with decreasing resist thick...
Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi
Solid-State Electronics   46 1723-1727   Nov 2002
The paper describes the fabrication of single-electron transistors and circuits using silicon-on-insulators (SOIs). We first point out that control of the oxidation of Si is quite important and could be the key to the fabrication of quantum device...
T. Ishiyama, M. Nagase, Y. Omura
Applied Surface Science   190 16-19   May 2002
The step-terrace structures at the interface between the Si layer and the buried SiO2layer of a Separation by IMplanted OXygen substrate has been observed by using atomic force microscopy (AFM) after removing the SiO2and Si layers. The time evolut...
M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, Y. Takahashi
Applied Surface Science   190 144-150   May 2002
The embedded Si structure formed by pattern-dependent oxidation (PADOX) in single-electron device (SED) is analyzed by novel microscopic methods using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface charge imaging...
Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi
Microelectronic Engineering   59 435-442   Nov 2001
This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. ...
S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, K. Murase
Japanese Journal of Applied Physics, Part 2: Letters   40    Jan 2001
The origin of the potential profile in silicon single-electron transistors (SETs) fabricated using pattern-dependent oxidation (PADOX) is investigated by making use of the geometric structure measured by atomic force microscope (AFM), the bandgap ...
Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   39 2325-2328   Dec 2000
Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxi...
Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase
IEEE Transactions on Electron Devices   47 147153   Dec 2000
A new fabrication method for Si singleelectron transistors (SET's) is proposed. The method applies thermal oxidation to a Si wire with a fine trench across it on a silicononinsulator substrate. During the oxidation the Si wire with the fine trench...
Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase
Applied Physics Letters   76 3121-3123   May 2000
A Si complementary single-electron inverter in which two identical single-electron transistors (SETs) are packed is fabricated on a silicon-on-insulator substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables...
Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara
Journal of Photopolymer Science and Technology   13 427-433   Jan 2000
We have developed a cross-linked positive-tone resist, called the ]Suppressed Aggregate Extraction Development Resist (SAGEX), for the purpose of reducing the line-edge roughness (LER) in resist patterns, which is caused by the existence of polyme...
Kenji Shiraishi, Masao Nagase, Seiji Horiguchi, Hiroyuki Kageshima, Masashi Uematsu, Yasuo Takahashi, Katsumi Murase
Physica E: Low-Dimensional Systems and Nanostructures   7 337-341   Jan 2000
We have investigated using partial oxidation of an Si ware for forming quantum dots. Calculated results show oxidation induced strain leads to the formation of effective quantum dots, although actual dot-shaped structures are not formed. By invest...
Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase
IEEE Transactions on Electron Devices   47 147-153   Jan 2000
A new fabrication method for Si single-electron transistors (SET's) is proposed. The method applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate. During the oxidation, the Si wire with the fine tr...
M. Nagase, K. Kurihara
Microelectronic Engineering   53 257-260   Jan 2000
Detailed shapes of embedded Si nanostructures were clearly observed through a SiO2layer using scanning electron microscopy (SEM). We found a new imaging mechanism by which secondary electron (SE) yield from the oxide surface is greater where an em...
Tom Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38 7114-7118   Dec 1999
We propose a cross-linking technique as a new approach to reducing the line-edge roughness (LER) of resist patterns. In addition, we also develop a cross-linked positive-tone resist called the suppressed aggregate extraction development (SAGEX) re...
Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase
Technical Digest - International Electron Devices Meeting   367-370   Dec 1999
A complementary single-electron inverter occupying an extremely small area is fabricated on an SOI substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny single-electron transistors...
Yasuo Takahashi, Akira Fujiwara, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Kazumi Iwadate, Katsumi Murase
International Journal of Electronics   86 605-639   Jan 1999
Silicon single-electron transistors (SETs) were fabricated by using very flat silicon-on-insulator (SOI) substrates, high resolution electron beam (EB) lithography and etching techniques. In addition, we developed a special fabrication method call...
K. Kurihara, Y. Watanabe, M. Nagase
Microelectronic Engineering   46 117-120   Jan 1999
A new method for Si nanofabrication was developed by exploiting nanoscale local oxidation using an ultrathin ECR plasma oxynitride nanomask (NANOLOX). ECR nitrogen plasma exposure with resist mask patterns directly forms a nanomask on Si surface. ...
Akira Fujiwara, Yasuo Takahashi, Kenji Yamazaki, Hideo Namatsu, Masao Nagase, Kenji Kurihara, Katsumi Murase
IEEE Transactions on Electron Devices   46 954-959   Jan 1999
We fabricated a single-electron device that is useful as a unit device for single-electron logic circuits. The device is a three-current-terminal device fabricated on a silicon-on-insulator (SOI) wafer, which includes two Si islands whose electric...
Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Kurihara, Yoshio Kawai
Proceedings of SPIE - The International Society for Optical Engineering   3678 617-624   Jan 1999
We investigate the origin of the line-edge roughness (LER) of line patterns of chemically amplified photo resists for the purpose of reducing size fluctuations of patterns in present and future deep-UV lithography. An atomic force microscope analy...

Misc

 
Observation of graphene on SiC using various types of microscopy
Masao Nagase
THE HITACHI SCIENTIFIC INSTRUMENT NEWS   Vol.7 8-16   Sep 2016   [Invited]
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
2014 IEEE International Nanoelectronics Conference, INEC 2014      Apr 2016
© 2014 IEEE. Graphene on SiC is studied using the first-principles calculation approach. Here, the roles of the [1-100] steps for the growth mechanism are focused on, and are discussed by comparing with the role of the [11-20] step. It has been fo...
Observation of graphene on SiC using various types of microscopy
Masao Nagase
THE HITACHI SCIENTIFIC INSTRUMENT NEWS   Vol.58(No.2) 5027-5034   Sep 2015   [Invited]
Masao Nagase
月刊機能材料   Vol.34(No.5) 28-35   May 2014   [Invited]
高速高温アニール装置によるグラフェン形成
Masao Nagase
''熱技術''30年の歩み   9-13   Apr 2012   [Invited]
Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, Hiroki Hibino
Materials Research Society Symposium Proceedings   1283 40-45   Dec 2011
We studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC The half-integer quantum Hall effect under the gated en...
グラフェン研究の現状と新規材料としての可能性
Masao Nagase
炭素材料の研究開発動向 2011   61-70   May 2011   [Invited]
炭素材料グラフェン
Masao Nagase
工業材料   Vol.58 44-45   Jan 2010   [Invited]
K. Nishiguchi, M. Nagase, T. Yamaguchi, A. Fujiwara, H. Yamaguchi
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC   470-471   Dec 2007
K. Nonaka, K. Tamaru, M. Nagase, H. Yamaguchi, SWarisawa, S. Ishihara
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC   256-257   Dec 2007
For carbon nanopillars with different heights fabricated by FIB-CVD, we achieved the uniformization of pillar diameter and the homogenization of Young's modulus for growth heights by controlling focus position of FIB.

Books etc

 
ナノカーボンの応用と実用化
Masao Nagase, 他
CMC Publishing Co.,Ltd.   Oct 2017   
グラフェンの機能と応用展望
Masao Nagase, 他
CMC Publishing Co.,Ltd.   Sep 2015   
Integration Technology for Heterogeneous Advanced Devices: Basics and Applications
Masao Nagase, 他
CMC Publishing Co.,Ltd.   Nov 2012   
グラフェンが拓く材料の新領域
Hiroki Hibino, Masao Nagase, 他
エヌティーエス   Jun 2012   
マクロ観察と新型顕微技法Q&A
Masao Nagase, 他
アグネ承風社   Oct 2010   

Conference Activities & Talks

 
SiC 上グラフェンFETを用いたアビジン-イミノビオチン相互作用の観測
Yoshiaki Taniguchi, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Mikito Yasuzawa
第10回「集積化MEMSシンボジウム」   1 Nov 2018   The Japan Society of Applied Physics
溶液中におけるSiC上グラフェンFETのドリフト評価
Hiromichi Wariishi, Masaki Kuzuo, Yoshiaki Taniguchi, Yasuhide Ohno, Masao Nagase
第10回「集積化MEMSシンボジウム」   1 Nov 2018   The Japan Society of Applied Physics
SiC上グラフェンの高感度ガス応答
Shuta Ochi, Hitoshi Teratani, Makoto Kitaoka, Yasuhide Ohno, Masao Nagase
第10回「集積化MEMSシンボジウム」   31 Oct 2018   The Japan Society of Applied Physics
グラフェン FET 特性の緩衝液濃度依存性
Yuto Kawagoshi, Yoshiaki Taniguchi, Yasuhide Ohno, Masao Nagase
第10回「集積化MEMSシンボジウム」   30 Oct 2018   The Japan Society of Applied Physics
Mechanical Properties of Structured Water Layer on Epitaxial Graphene
Masaki Kuzuo, Kazushi Matsui, Yasuhide Ohno, Masao Nagase
ACSIN-14 & ICSPM26   22 Oct 2018   The Japan Society of Applied Physics
集束イオンビーム技術によるナノ電極プローブの開発
Masao Nagase, Yasuhide Ohno, Mikito Yasuzawa
社会産業理工学研究交流会2018   28 Sep 2018   徳島大学社会産業理工学研究部
大面積単結晶グラフェン膜の合成とデバイス応用
Masao Nagase, Yasuhide Ohno
計量計測展2018   26 Sep 2018   (一社)日本計量機器工業連合会
Mechanical Properties of Structured Water Layer on Epitaxial Graphene
Masaki Kuzuo, Yusuke Yamada, Kazushi Matsui, Yoshiaki Taniguchi, Yasuhide Ohno, Masao Nagase
第79回応用物理学会秋季学術講演会(応物2018秋)   21 Sep 2018   The Japan Society of Applied Physics
pH dependence of protein adsorption to a graphene film on SiC substrate
Daiu Akiyama, Yoshiaki Taniguchi, Yasuhide Ohno, Masao Nagase
第79回応用物理学会秋季学術講演会(応物2018秋)   20 Sep 2018   The Japan Society of Applied Physics
The characteristics of p-type graphene film for protein adsorptions
谷口 嘉昭, 高村 真琴, 谷保 芳孝, Yasuhide Ohno, Masao Nagase
第79回応用物理学会秋季学術講演会(応物2018秋)   20 Sep 2018   The Japan Society of Applied Physics
Influenza Virus Detection Using Glycan-Functionalized SiC Graphene
小野 尭生, Yoshiaki Taniguchi, 牛場 翔太, 金井 康, 前橋 兼三, 井上 恒一, 渡邊 洋平, 中北 愼一, 鈴木 康夫, 河原 敏男, 木村 雅彦, Yasuhide Ohno, Masao Nagase, 松本 和彦
第79回応用物理学会秋季学術講演会(応物2018秋)   20 Sep 2018   The Japan Society of Applied Physics
Vertically stacked graphene tunneling junction with insulative water layer
Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno, Masao Nagase
第65回応用物理学会春季学術講演会(応物2018春)   18 Mar 2018   The Japan Society of Applied Physics
pH control of avidin adsorption by iminobiotin modified graphene film
谷口 嘉昭, 三木 翼, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa, Mikito Yasuzawa
第65回応用物理学会春季学術講演会(応物2018春)   18 Mar 2018   The Japan Society of Applied Physics
Evaluation of water doping effect on graphene on SiC
Hitoshi Teratani, Makoto Kitaoka, Kazushi Matsui, Masaaki Tahara, Yasuhide Ohno, Masao Nagase
第65回応用物理学会春季学術講演会(応物2018春)   17 Mar 2018   The Japan Society of Applied Physics
Functionalization of graphene on SiC by deionized water treatment
Masao Nagase
平成29年度 共同プロジェクト研究発表会   22 Feb 2018   東北大学 電気通信研究所
LEDライフイノベーション総合プラットフォーム推進事業におけるテラヘルツLED応用基盤技術に関する取り組み
Masanobu Haraguchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Yohsuke Kinouchi, Katsuyuki Miyawaki, Akira Takahashi, Toshiya Okahisa
LED総合フォーラム2018in徳島   12 Feb 2018   
分子修飾技術を用いたグラフェン表面のタンパク質吸着抑制
谷口 嘉昭, 三木 翼, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa, Mikito Yasuzawa
平成 29 年度第 4 回半導体エレクトロニクス部門委員会・講演会   27 Jan 2018   The Society of Materials Science,Japan
顕微ラマン分光法による機能化 iC 上グラフェンの応力とキャリア密度の定量評価
河村 祐輔, 森本 征士, 北岡 誠, 田原 雅章, Yasuhide Ohno, Masao Nagase
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会   27 Jan 2018   The Society of Materials Science,Japan
SiC 上グラフェン高品質化に向けたグラフェン成長過程の解明
田原 雅章, 河村 祐輔, Yasuhide Ohno, Masao Nagase
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会   27 Jan 2018   The Society of Materials Science,Japan
SiC 上グラフェンのデバイス応用 [Invited]
Masao Nagase
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会   27 Jan 2018   The Society of Materials Science,Japan
ホスホリルコリン修飾グラフェンのタンパク質吸着特性
谷口 嘉昭, 三木 翼, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa, Mikito Yasuzawa
第9回「集積化MEMSシンボジウム」   2 Nov 2017   The Japan Society of Applied Physics
Modified molecule dependence in hydrophilic treatment on SiC graphene
杉岡 賢人, 谷口 嘉昭, 三木 翼, 田原 雅章, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Keiji Minagawa, Yasushi Imada, Mikito Yasuzawa
第78回応用物理学会秋季学術講演会(応物2017秋)   8 Sep 2017   The Japan Society of Applied Physics
Observation of structure water layer graphene on SiC using Kelvin Force Microscope
松井 一史, 中村 晃大, 北岡 誠, 谷口 嘉昭, Yasuhide Ohno, Masao Nagase
第78回応用物理学会秋季学術講演会(応物2017秋)   7 Sep 2017   The Japan Society of Applied Physics
ホスホリルコリン修飾によるグラフェン表面のタンパク質吸着抑制
谷口 嘉昭, 三木 翼, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa, Mikito Yasuzawa
電子デバイス研究会(ED)   9 Aug 2017   Institute of Electronics, Information and Communication Engineers
SiCグラフェン積層構造における電気特性の角度依存性
木村 幸将, Yasuhide Ohno, Masao Nagase
第8回集積化 MEMS 技術研究ワークショップ   27 Jul 2017   (社)応用物理学会 集積化MEMS技術研究会
イオン性ゲルを用いたSiC上グラフェンデバイスの特性評価
森高 恭平, Yasuhide Ohno, Masao Nagase
第8回集積化 MEMS 技術研究ワークショップ   27 Jul 2017   (社)応用物理学会 集積化MEMS技術研究会
SiC上グラフェンの 各種顕微鏡法による 観察・評価 [Invited]
Masao Nagase
第32回 材料解析テクノフォーラム   5 Jul 2017   日立ハイテクノロジーズ
Electrical characteristic evaluation of graphene on SiC
礒合 俊輔, Mikito Yasuzawa, Yasuhide Ohno, Masao Nagase
電気化学会第84回大会   25 Mar 2017   
集束イオンビームを用いたステンシルリソグラフィ技術のための Sub10nm パターンの作製
朴 理博, Masao Nagase, Yasuhide Ohno
第64回応用物理学会春季学術講演会(応物2017春)   15 Mar 2017   The Japan Society of Applied Physics
SiC 上グラフェンの水吸着によるキャリア密度変化
北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno, Masao Nagase
第64回応用物理学会春季学術講演会(応物2017春)   15 Mar 2017   The Japan Society of Applied Physics
分子修飾機能化による SiC 上グラフェンの非特異吸着の抑制
谷口 嘉昭, 三木 翼, 光野 琢仁, Yasuhide Ohno, Masao Nagase, Keiji Minagawa, Mikito Yasuzawa
第64回応用物理学会春季学術講演会(応物2017春)   15 Mar 2017   The Japan Society of Applied Physics
LEDライフイノベーション総合プラットフォーム推進事業におけるテラヘルツLED応用基盤技術に関する取り組み
Masanobu Haraguchi, Yohsuke Kinouchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Katsuyuki Miyawaki, Akira Takahashi, Toshiya Okahisa
LED総合フォーラム2016in徳島 論文集   17 Dec 2016   LED総合フォーラム実行委員会
SiC上グラフェンのタンパク質吸着特性
谷口 嘉昭, Yasuhide Ohno, Masao Nagase
サイエンスプラザ2016   23 Nov 2016   日本電信電話(株)NTT物性科学基礎研究所
SiC 上グラフェンのシート抵抗の湿度依存性
北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno, Masao Nagase
第8回集積化MEMSシンボジウム   25 Oct 2016   The Japan Society of Applied Physics
新規合成分子を用いた表面修飾による単結晶グラフェンの親水化
谷口 嘉昭, 三木 翼, 光野 琢仁, Yasuhide Ohno, Masao Nagase, Keiji Minagawa, Mikito Yasuzawa
第8回集積化MEMSシンボジウム   25 Oct 2016   The Japan Society of Applied Physics
SiC 上グラフェンの水脱離による導電率変化
北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno, Masao Nagase
第77回応用物理学会秋季学術講演会(応物2016秋)   15 Sep 2016   The Japan Society of Applied Physics
グラフェン本来のイオンセンシング特性
Yasuhide Ohno, 光野 琢仁, 谷口 嘉昭, Masao Nagase
第77回応用物理学会秋季学術講演会(応物2016秋)   15 Sep 2016   The Japan Society of Applied Physics
顕微ラマン分光法による SiC 上グラフェンの応力とキャリア密度の面内分布評価
森本 征士, 有月 琢哉, 青木 翔, Yasuhide Ohno, Masao Nagase
第77回応用物理学会秋季学術講演会(応物2016秋)   13 Sep 2016   The Japan Society of Applied Physics
走査プローブ顕微鏡を用いた SiC 上グラフェンの実効ヤング率計測
山田 祐輔, 有月 琢哉, 高嶋 和也, Yasuhide Ohno, Masao Nagase
第77回応用物理学会秋季学術講演会(応物2016秋)   13 Sep 2016   The Japan Society of Applied Physics
Hydrophilic Graphene Film by Molecular Functionalization
Yoshiaki Taniguchi, Tsubasa Miki, Takanori Mitsuno, Yasuhide Ohno, Masao Nagase, Keiji Minagawa, Mikito Yasuzawa
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)   27 Jun 2016   
Electrical characteristics of positively and negatively charged protein adsorption to epitaxial graphene film on SiC substrate
Yasuhide Ohno, Yoshiaki Taniguchi, Masao Nagase
Proceedings of 2017 Workshop on Innovative Nanoscale Devices and Systems   30 Nov 2017   
Intrinsic pH Sensitivity of Graphene Field-Effect Transistors
Takanori Mitsuno, Yoshiaki Taniguchi, Yasuhide Ohno, Masao Nagase
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)   27 Jun 2016   
Water adsorption and desorption for graphene on SiC
Kitaoka Makoto, Nakamura Kota, Teratani Hitoshi, Yasuhide Ohno, Masao Nagase
International Symposium on Epitaxial Graphene 2017 (ISEG-2017)   23 Nov 2017   Nagoya University
ロジウム - 二硫化モリブデン - グラフェンヘテロ接合の電気特性に関する研究
楊 順涵, 有月 琢哉, 高嶋 和也, Yasuhide Ohno, Masao Nagase
第63回応用物理学会春季学術講演会(応物2016春)   22 Mar 2016   The Japan Society of Applied Physics
エピタキシャルグラフェン上の吸着水層
中村 晃大, 有月 琢哉, 高嶋 和也, 永濱 拓也, 北岡 誠, Masao Nagase, Yasuhide Ohno
第63回応用物理学会春季学術講演会(応物2016春)   22 Mar 2016   The Japan Society of Applied Physics
SiC 上グラフェンに堆積した金ナノ粒子の SERS 効果
Hisatomo Matsumura, Shin-ichiro Yanagiya, Akihiro Furube, Hiroki Kishikawa, Nobuo Goto, Masao Nagase
第63回応用物理学会春季学術講演会(応物2016春)   21 Mar 2016   The Japan Society of Applied Physics
雰囲気制御による SiC 上グラフェンの抵抗値変化
永濱 拓也, 小林 慶祐, 有月 琢哉, 高嶋 和也, 青木 翔, Yasuhide Ohno, Masao Nagase
第76回応用物理学会秋季学術講演会(応物2015秋)   15 Sep 2015   The Japan Society of Applied Physics
Cat-CVD 法による SiNx 絶縁膜を用いた SiC グラフェン FET の作製
Yasuhide Ohno, Masao Nagase, 松本 和彦
第76回応用物理学会秋季学術講演会(応物2015秋)   15 Sep 2015   The Japan Society of Applied Physics
SiC上グラフェンのナノ物性評価 [Invited]
Masao Nagase
JSM SPM分科会・RIIFセミナー-グリーンエレクトロニクス材料・デバイスのSPM解析技術-   19 Mar 2015   日本顕微鏡学会走査型プローブ顕微鏡分科会/独立行政法人 産業技術総合研究所 計測フロンティア研究部門
Carrier density variation of graphene on SiC by using HSQ
小田 達也, 小林 慶祐, 有月 琢哉, 青木 翔, 永? 拓也, Masao Nagase
第62回応用物理学会春季学術講演会(応物2015春)   12 Mar 2015   The Japan Society of Applied Physics
Graphene on SiC substrate fabricated by infrared rapid thermal annealer [Invited]
Masao Nagase
India-Japan workshop on "Nanotechnology: Synthesis & Sensing Applications"   16 Oct 2014   
SiC(0001) Si 面上第一層目グラフェン成長における [1-100]ステップの役割
影島 博之(島根大学), Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
第75回応用物理学会秋季学術講演会(応物2014秋)   19 Sep 2014   The Japan Society of Applied Physics
SiC 上グラフェンのラマンスペクトルにおける表面成分抽出
青木 翔, 呉 龍錫, 井口 宗明, 中島 健志, Masao Nagase
第75回応用物理学会秋季学術講演会(応物2014秋)   18 Sep 2014   The Japan Society of Applied Physics
Surface-Enhanced Raman Scattering of Graphene on SiC by Gold Nanoparticles
Yoshiaki Sekine, Hiroki Hibino, 小栗 克弥, 岩本 篤, Masao Nagase, Hiroyuki Kageshima, 赤崎 達志
第75回応用物理学会秋季学術講演会(応物2014秋)   18 Sep 2014   The Japan Society of Applied Physics
デバイス化プロセスにおける SiC 上グラフェン電子物性変調
有月 琢哉, 奥村 俊夫, 呉 龍錫, 中島 健志, 小林 慶祐, Masao Nagase
第75回応用物理学会秋季学術講演会(応物2014秋)   17 Sep 2014   The Japan Society of Applied Physics
SiC 上グラフェン表面電位の環境雰囲気効果に関する研究
泰地 耕作, 奥村 俊夫, 中島 健志, Masao Nagase
第75回応用物理学会秋季学術講演会(応物2014秋)   17 Sep 2014   The Japan Society of Applied Physics
Theoretical studies of graphene on SiC [Invited]
Kageshima Hiroyuki, Hibino Hiroki, Yamaguchi Hiroshi, Nagase Masao
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)   30 Jul 2014   
Intrinsic response of protein adsorption to graphene film on SiC substrate
Taniguchi Yoshiaki, Milki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa, Mikito Yasuzawa
Proceedings of 2017 International Conference on Solid State Devices and Materials   20 Sep 2017   
Large-scale epitaxial graphene fabricated by high-temperature graphitization of SiC substrate [Invited]
Masao Nagase
International Conference on Advanced Materials Development & Performance (AMDP) 2017   13 Jul 2017   
Electrical characteristic evaluation of Graphene on SiC
Tsuyoshi Tsuda, Mikito Yasuzawa, Yasuhide Ohno, Masao Nagase
International Conference on Advanced Materials Development and Performance 2017   13 Jul 2017   
Single-Crystal graphene on SiC substrate: growth and applications [Invited]
Masao Nagase
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)   3 Jul 2017   
Epitaxial graphene on SiC for new functional devices [Invited]
Masao Nagase
Collaborative Conference on Materials Research (CCMR) 2017   29 Jun 2017   
Intrinsic ion sensitivity of graphene field-effect transistors
Yasuhide Ohno, Takanori Mitsuno, Yoshiaki Taniguchi, Masao Nagase
2016 Workshop on Innovative Nanoscale Devices and Systems   5 Dec 2016   
Protein adsorption characteristics on bare and phosphorylcholine-modified graphene films on SiC substrate
Taniguchi Yoshiaki, Miki Tsubasa, Mitsuno Takanori, Yasuhide Ohno, Masao Nagase, Keiji Minagawa, Mikito Yasuzawa
29th International Microprocesses and Nanotechnology Conference (MNC2016)   11 Nov 2016   The Japan Society of Applied Physics
Carrier doping effect of humidity for single-crystal graphene on SiC
Kitaoka Makoto, Nagahama Takuya, Nakamura Kohta, Takashima Kazuya, Yasuhide Ohno, Masao Nagase
29th International Microprocesses and Nanotechnology Conference (MNC2016)   11 Nov 2016   The Japan Society of Applied Physics
Single-crystal graphene growth on SiC by infrared rapid thermal annealing [Invited]
Masao Nagase
2016 Collaborative Conference on 3D and Materials Research(CC3DMR)   22 Jun 2016   
Hiroyuki Kageshima, Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
2014 IEEE International Nanoelectronics Conference, INEC 2014   26 Apr 2016   
© 2014 IEEE. Graphene on SiC is studied using the first-principles calculation approach. Here, the roles of the [1-100] steps for the growth mechanism are focused on, and are discussed by comparing with the role of the [11-20] step. It has been fo...
SERS study of gold nanoparticles deposited on graphene epitaxially grown on SiC
Hisatomo Matsumura, Shin-ichiro Yanagiya, Nobuo Goto, Hiroki Kishikawa, Masao Nagase, Akihiro Furube, Hsu Shih-Hsiang
International Forum on Advanced Technologies (IFAT2016), Tokushima   8 Mar 2016   
Electron emission using multilayered-graphene/SiO2/Si heterodevice driven with low-voltage supply in low vacuum
Yoshizumi D., Nishiguchi K., Yoshiaki Sekine, Furukawa K., Fujiwara A., Masao Nagase
28th International Microprocesses and Nanotechnology Conference (MNC2015)   13 Nov 2015   The Japan Society of Applied Physics
High quality graphene on SiC formed by the surface structure control technique
Aritsuki Takuya, Nakashima Takeshi, Kobayashi Keisuke, Yasuhide Ohno, Masao Nagase
28th International Microprocesses and Nanotechnology Conference (MNC2015)   12 Nov 2015   The Japan Society of Applied Physics
Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates
Yasuhide Ohno, Masao Nagase, Matsumoto Kazuhiko
28th International Microprocesses and Nanotechnology Conference (MNC2015)   12 Nov 2015   The Japan Society of Applied Physics
Graphene on SiC substrates fabricated by an infrared rapid thermal annealer [Invited]
Masao Nagase
3rd International Conference on Nanotechnology (NANOCON 014)   15 Oct 2014   
Epitaxial graphene grown by infrared rapid thermal annealing [Invited]
Masao Nagase
The 6th IEEE International Nanoelectronics Conference (INEC2014)   29 Jul 2014   
グラフェン積層接合の電気特性
茶谷 洋光, 奥村 俊夫, 伊澤 輝記, 井口 宗明, 中島 健志, 小林 慶祐, 呉 龍錫, 有月 琢哉, 松本 卓也, 前田 文彦, Hiroki Hibino, Masao Nagase
第61回応用物理学会春季学術講演会(応物2014春)   20 Mar 2014   The Japan Society of Applied Physics
SiC上グラフェンのオゾン処理によるキャリア密度制御
呉 龍錫, 奥村 俊夫, 中島 健志, 有月 琢哉, 井口 宗明, 青木 翔, 小林 慶祐, 松本 卓也, Masao Nagase
第61回応用物理学会春季学術講演会(応物2014春)   19 Mar 2014   The Japan Society of Applied Physics
SiC(0001) Si面上エピタキシャルグラフェン成長における[1-100]ステップの役割
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
第61回応用物理学会春季学術講演会(応物2014春)   18 Mar 2014   The Japan Society of Applied Physics
SiC上単結晶グラフェンの成長とその物性評価 [Invited]
Masao Nagase
第61回応用物理学会春季学術講演会(応物2014春)   18 Mar 2014   The Japan Society of Applied Physics
高品質単層エピタキシャルグラフェン作製技術 [Invited]
Masao Nagase
産総研セミナー   28 Feb 2014   
エピタキシャルグラフェン作製技術の研究 [Invited]
Masao Nagase
香川大学工学部 第9回先端工学研究発表会   3 Feb 2014   
表面構造制御による均一単層グラフェン成長
茶谷 洋光, 田尾 拓人, 奥村 俊夫, 中島 健志, 小林 慶祐, Masao Nagase
平成25年度応用物理学会九州支部学術講演会   30 Nov 2013   応用物理学会 九州支部
Nano-electrical and mechanical properties of graphene on SiC substrate [Invited]
Masao Nagase
Quantum Science Symposium ASIA-2013 Meeting   25 Nov 2013   
Effects of UV light on electrochemical wet etching of silicon carbide for suspended graphene fabrication
O Ryongsok, Takamura Makoto, Furukawa Kazuaki, Masao Nagase, Hiroki Hibino
26th International Microprocesses and Nanotechnology Conference (MNC2013)   8 Nov 2013   The Japan Society of Applied Physics
SiC(0001)上0層グラフェン成長における表面形状の起源
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
日本物理学会 2013年秋季大会   28 Sep 2013   The Physical Society of Japan
顕微ラマン分光法による SiC 上グラフェンの欠陥評価
井口 宗明, 中島 健志, 奥村 俊夫, 呉 龍錫, Masao Nagase
平成 25 年度 電気関係学会四国支部連合大会   21 Sep 2013   電気関係学会四国支部
SiC上グラフェンにおける移動度の異方性
小林 慶祐, Shinichi Tanabe, 田尾 拓人, 呉 龍錫, 奥村 俊夫, 中島 健志, Hiroki Hibino, Masao Nagase
第74回応用物理学会秋季学術講演会(応物2013秋)   18 Sep 2013   The Japan Society of Applied Physics
SiC(0001)面上第1層グラフェン成長初期過程とステップの役割
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
第74回応用物理学会秋季学術講演会(応物2013秋)   17 Sep 2013   The Japan Society of Applied Physics
表面構造制御による均一単層グラフェン成長
中島 健志, 奥村 俊夫, 田尾 拓人, 呉 龍錫, 井口 宗明, Masao Nagase
第74回応用物理学会秋季学術講演会(応物2013秋)   17 Sep 2013   The Japan Society of Applied Physics
Highly uniform mono-layer graphene on SiC
Takuto Tao, Toshio Okumura, Nakashima Takeshi, O Ryongsok, Masao Nagase
5th International Conference on Recent Progress in Graphene Research 2013 (RPGR 2013)   12 Sep 2013   
グラフェンの極限デバイス応用への提案 [Invited]
Masao Nagase
徳島県「ものづくり新技術展示商談会in HONDA」   11 Sep 2013   
SiC昇華法による単結晶グラフェン作製技術 [Invited]
Masao Nagase
第2回和歌山大・徳島大合同 光・ナノテクノロジー研究会   9 Aug 2013   
新炭素ナノ材料・グラフェンについて [Invited]
Masao Nagase
徳島大学工業会 東海支部 第33回支部総会   7 Jul 2013   徳島大学工業会東海支部
SiC上グラフェンによる原子層スイッチ
西 勇輝, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi, Masao Nagase
第60回応用物理学会春季学術講演会(応物2013春)   29 Mar 2013   The Japan Society of Applied Physics
SiC上グラフェンのラマンスペクトル測定における基板効果の評価
岩田 義之, 岩本 篤, 井口 宗明, Masao Nagase
第60回応用物理学会春季学術講演会(応物2013春)   28 Mar 2013   The Japan Society of Applied Physics
SiC上グラフェン架橋構造作製のための電解エッチング条件の 検討
呉 龍錫, 高村 真琴, 古川 一暁, Masao Nagase, Hiroki Hibino
第60回応用物理学会春季学術講演会(応物2013春)   27 Mar 2013   The Japan Society of Applied Physics
高品質単結晶単層グラフェンの作製技術 [Invited]
Masao Nagase
徳島大学 新技術説明会   5 Feb 2013   徳島大学 産学官連携推進部
グラフェンの基礎物性と応用技術 [Invited]
Masao Nagase
Advance Metallization Conf. 2012, 22nd Asian Session (ADMETA Plus 2012): Tutorial   22 Oct 2012   
SiC(0001)面上第0層グラフェン成長初期過程とステップの役割
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
第73回応用物理学会学術講演会(応物2012秋)   13 Sep 2012   The Japan Society of Applied Physics
SiC上グラフェンの不均一成長メカニズム
奥村 俊夫, 田尾 拓人, 呉 龍錫, 中島 健志, Masao Nagase
第73回応用物理学会学術講演会(応物2012秋)   13 Sep 2012   The Japan Society of Applied Physics
走査型摩擦力顕微鏡を用いたナノ摩擦係数測定
伊澤 輝記, 船瀬 雄也, 西 勇輝, Masao Nagase
第73回応用物理学会学術講演会(応物2012秋)   13 Sep 2012   The Japan Society of Applied Physics
Role of Step in Initial Stage of Graphene Growth on SiC(0001)
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
International Conference on Physics of Semiconductors (ICPS2012)   2 Aug 2012   

Research Grants & Projects

 
Grants-in-Aid for Scientific Research
Project Year: Apr 2015 - Mar 2018    Investigator(s): 大野 恭秀
Grants-in-Aid for Scientific Research
Project Year: Apr 2014 - Mar 2017    Investigator(s): Nagase Masao
Grants-in-Aid for Scientific Research
Project Year: Apr 2010 - Mar 2013    Investigator(s): NAGASE Masao
Grants-in-Aid for Scientific Research
Project Year: Apr 2009 - Mar 2012    Investigator(s): HIBINO Hiroki
Grants-in-Aid for Scientific Research
Project Year: Apr 2008 - Mar 2011    Investigator(s): YAMAGUCHI Hiroshi
Grants-in-Aid for Scientific Research
Project Year: Apr 2007 - Mar 2010    Investigator(s): NAGASE Masao