論文

査読有り
2018年12月

Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga<inf>2</inf>O<inf>3</inf>thin films on SnO<inf>2</inf>/c-sapphire substrates

Materials Letters
  • Daisuke Tahara
  • ,
  • Hiroyuki Nishinaka
  • ,
  • Minoru Noda
  • ,
  • Masahiro Yoshimoto

232
開始ページ
47
終了ページ
50
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.matlet.2018.08.082

© 2018 ε-Ga2O3has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of ε-Ga2O3was successfully measured using a planar-plate capacitor comprising a thick ε-Ga2O3layer (3 μm). Herein, we aim to enhance the ferroelectric properties of ε-Ga2O3to allow ferroelectric measurements to be conducted with a lower maximum applied voltage and a higher measurement frequency as compared with previous studies. We successfully observed ferroelectric hysteresis loops of orthorhombic ε-Ga2O3thin (250 nm) films grown on SnO2conductive layers on c-sapphire substrates. Moreover, the smooth-surface morphology and improved crystal quality induced ferroelectric properties in the ε-Ga2O3thin films grown at 750 °C. This material was used to facilitate ferroelectric measurements at a relatively high frequency of 1 kHz with a maximum applied electric field of 0.38 MV/cm and a small remnant polarization (2Pr = 7.6 nC/cm2) at room temperature.

リンク情報
DOI
https://doi.org/10.1016/j.matlet.2018.08.082
Scopus
https://www.scopus.com/record/display.uri?eid=2-s2.0-85051648916&origin=inward
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85051648916&origin=inward