論文

査読有り 筆頭著者 責任著者
2021年11月20日

Cytotoxicity and pro-inflammatory effect of GaSb thin films in L929 cells

International Journal of Modern Physics B
  • Fujihara, J.
  • ,
  • Nishimoto, N.

35
29
記述言語
掲載種別
研究論文(学術雑誌)
DOI
10.1142/S0217979221502970
出版者・発行元
World Scientific Pub Co Pte Ltd

Gallium antimonide (GaSb)-based devices operate efficiently in the infrared region. Investigating the toxicity of GaSb thin film is necessary for using embedded GaSb-based devices in living organisms. In this study, viability, oxidative stress, inflammatory responses, apoptosis induction and genotoxicity of GaSb were assayed using L929 cells following a 24 h exposure to GaSb. GaSb thin films were deposited on a quartz substrate using radio frequency (RF) magnetron sputtering. These films were soaked in cell culture medium to prepare test solutions. The viability of cells treated with the GaSb extract was lower than that of control cells. GaSb elicited little reactive oxygen species (ROS) generation. Tumor necrosis factor (TNF)-[Formula: see text] and interleukin (IL)-1[Formula: see text] levels were elevated in GaSb-treated cell culture supernatants. Apoptosis and genotoxicity were not evident following GaSb treatment. Overall, these results demonstrate the low toxicity of GaSb compared with previous studies examining arsenic-containing III–V materials, which is desirable for biological devices.

リンク情報
DOI
https://doi.org/10.1142/S0217979221502970
URL
https://www.worldscientific.com/doi/pdf/10.1142/S0217979221502970
ID情報
  • DOI : 10.1142/S0217979221502970
  • ISSN : 1793-6578
  • ISSN : 0217-9792
  • eISSN : 1793-6578
  • ORCIDのPut Code : 114251967
  • SCOPUS ID : 85117307418

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