2012年
Effect of substrate temperature on hardness and transparency of SiOC(-H) thin films synthesized by atmospheric pressure plasma enhanced CVD method
Materials Research Society Symposium Proceedings
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- 巻
- 1321
- 号
- 開始ページ
- 217
- 終了ページ
- 222
- 記述言語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1557/opl.2011.1191
Silicon-based films have gained much interest as protective coatings for transparent polymeric materials. In this study, SiOC(-H) thin films were deposited on polycarbonate (PC) or Si substrates from trimethylsilane (TrMS) gas diluted with He gas by atmospheric pressure plasma enhanced CVD (AP-PECVD) method with varying substrate temperature, and transparency and hardness of the films were investigated. The films exhibited a good optical transparency with an optical transmittance of about 90% irrespective of the substrate temperature, and the hardness increased from 0.6 to 1.3 GPa as the substrate temperature increased from 60 to 140°C. The results are discussed in terms of chemical structural changes in the films according to the substrate temperature. © 2011 Materials Research Society.
- リンク情報
- ID情報
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- DOI : 10.1557/opl.2011.1191
- ISSN : 0272-9172
- SCOPUS ID : 84455212249