論文

査読有り
2012年

Effect of substrate temperature on hardness and transparency of SiOC(-H) thin films synthesized by atmospheric pressure plasma enhanced CVD method

Materials Research Society Symposium Proceedings
  • Mayui Noborisaka
  • ,
  • So Nagashima
  • ,
  • Hidetaka Hayashi
  • ,
  • Naoharu Ueda
  • ,
  • Kyoko Kumagai
  • ,
  • Akira Shirakura
  • ,
  • Tetsuya Suzuki

1321
開始ページ
217
終了ページ
222
記述言語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1557/opl.2011.1191

Silicon-based films have gained much interest as protective coatings for transparent polymeric materials. In this study, SiOC(-H) thin films were deposited on polycarbonate (PC) or Si substrates from trimethylsilane (TrMS) gas diluted with He gas by atmospheric pressure plasma enhanced CVD (AP-PECVD) method with varying substrate temperature, and transparency and hardness of the films were investigated. The films exhibited a good optical transparency with an optical transmittance of about 90% irrespective of the substrate temperature, and the hardness increased from 0.6 to 1.3 GPa as the substrate temperature increased from 60 to 140°C. The results are discussed in terms of chemical structural changes in the films according to the substrate temperature. © 2011 Materials Research Society.

リンク情報
DOI
https://doi.org/10.1557/opl.2011.1191
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84455212249&origin=inward
Scopus Citedby
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ID情報
  • DOI : 10.1557/opl.2011.1191
  • ISSN : 0272-9172
  • SCOPUS ID : 84455212249

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