2017年1月
Cross-sectional transmission electron microscope observation of Si clathrate thin films grown on Si (111) substrates
THIN SOLID FILMS
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- 巻
- 621
- 号
- 開始ページ
- 32
- 終了ページ
- 35
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.tsf.2016.11.019
- 出版者・発行元
- ELSEVIER SCIENCE SA
By means of high-resolution transmission electron microscopy (HR-TEM) observations, and energy dispersive X-ray analyses performed with a scanning TEM (STEM-EDX), we evaluated the residual Na contents and the induced crystal strains in type-II Si clathrate films grown on a Si substrate and treated with iodine for Na elimination. Cross-sectional, TEM and STEM-EDX observations verified the formation of the type-II Si clathrate thin film on the Si substrate. The guest-free (without any Na inclusion) clathrate crystal was obtained by iodine (I-2) treatment for more than 3 cycles. The resulting films were polycrystalline. No buffer layer was observed at the boundary of the Si clathrate crystal film and the substrate, suggesting a chemical bonding between them. The crystalline strains defined here by the deviation of the d value were within 3.5%. These findings might allow us to fabricate epitaxial Si clathrate films on Si substrates. (C) 2016 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.tsf.2016.11.019
- ISSN : 0040-6090
- Web of Science ID : WOS:000392681900006