論文

査読有り
2018年2月1日

Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization

Japanese Journal of Applied Physics
  • Noriyuki Urakami
  • ,
  • Tetsuya Okuda
  • ,
  • Yoshio Hashimoto

担当区分
責任著者
57
2
開始ページ
-
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.7567/JJAP.57.02CB07
出版者・発行元
Japan Society of Applied Physics

In this paper, we present the formation of large-size rhenium disulfide (ReS2) films via the sulfurization of Re films deposited on sapphire substrates. The effects of sulfurization temperature and pressure on the crystal quality were investigated. A [001]-oriented single crystal of ReS2 films with 6 × 10 mm2 area was realized. By sulfurizing Re films at 1100 °C, ReS2 films with well-defined sharp interfaces to c-plane sapphire substrates could be formed. Below and above the sulfurization temperature of 1100 °C, incomplete sulfurization and film degradation were observed. The twofold symmetry of the monocrystalline in-plane structure composed of Re-Re bonds along with Re-S bonds pointed to a distorted 1T structure, indicating that this structure is the most stable atomic arrangement for ReS2. For a S/Re compositional ratio equal to or slightly lower than 2.0, characteristic Raman vibrational modes with the narrowest line widths were observed. The typical absorption peak of ReS2 can be detected at 1.5 eV.

リンク情報
DOI
https://doi.org/10.7567/JJAP.57.02CB07

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