2016年2月
Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
JOURNAL OF CRYSTAL GROWTH
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- 巻
- 435
- 号
- 開始ページ
- 19
- 終了ページ
- 23
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2015.11.011
- 出版者・発行元
- ELSEVIER SCIENCE BV
This paper presents the growth of GaAsN pseudo-alloys by a surface nitridation method that consisted of a repeated cycle of nitridation of the GaAs (001) surface, growth interruption and growth of a GaAs overlayer. Surface reconstruction during the nitridation process changed from (2 x 4) to (1 x 4) and (3 x 4) phases above 540 degrees C with the increase of nitridation time, resulting in a higher N compositions of the alloys. It was revealed that an excessive nitridation resulted in the degradation of the photoluminescence (PL) intensity. While the N composition slightly decreased with the interruption time, less impact appeared on their crystallinity characterized by PL measurement. As a result, the N composition was controllable between 1% and 5% by the combination of growth temperatures (460-600 degrees C) and thicknesses of the GaAs overlayer (2-8 monolayers; MLs). The thickness of the GaAs overlayer should be designed over 4 ML to form a flat surface for the next nitridation process. The integrated PL intensity of GaAs0.97N0.03 alloys was increased by 7 times compared to the one grown by conventional growth method (continuous supply), indicating the improved crystalline quality of the GaAsN alloys. (C) 2015 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jcrysgro.2015.11.011
- ISSN : 0022-0248
- eISSN : 1873-5002
- Web of Science ID : WOS:000367536600004