論文

査読有り
2016年2月

Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation

JOURNAL OF CRYSTAL GROWTH
  • Noriyuki Urakami
  • ,
  • Keisuke Yamane
  • ,
  • Hiroto Sekiguchi
  • ,
  • Hiroshi Okada
  • ,
  • Akihiro Wakahara

435
開始ページ
19
終了ページ
23
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.jcrysgro.2015.11.011
出版者・発行元
ELSEVIER SCIENCE BV

This paper presents the growth of GaAsN pseudo-alloys by a surface nitridation method that consisted of a repeated cycle of nitridation of the GaAs (001) surface, growth interruption and growth of a GaAs overlayer. Surface reconstruction during the nitridation process changed from (2 x 4) to (1 x 4) and (3 x 4) phases above 540 degrees C with the increase of nitridation time, resulting in a higher N compositions of the alloys. It was revealed that an excessive nitridation resulted in the degradation of the photoluminescence (PL) intensity. While the N composition slightly decreased with the interruption time, less impact appeared on their crystallinity characterized by PL measurement. As a result, the N composition was controllable between 1% and 5% by the combination of growth temperatures (460-600 degrees C) and thicknesses of the GaAs overlayer (2-8 monolayers; MLs). The thickness of the GaAs overlayer should be designed over 4 ML to form a flat surface for the next nitridation process. The integrated PL intensity of GaAs0.97N0.03 alloys was increased by 7 times compared to the one grown by conventional growth method (continuous supply), indicating the improved crystalline quality of the GaAsN alloys. (C) 2015 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 3

リンク情報
DOI
https://doi.org/10.1016/j.jcrysgro.2015.11.011
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000367536600004&DestApp=WOS_CPL

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